C&H Technology GA200HS60S1PbF User Manual

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Suite 108
Minnetonka, MN 55345

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Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A

FEATURES

• Generation 4 IGBT technology

GA200HS60S1PbF

• Standard speed: Optimized for hard switching
operating frequencies DC to 1 kHz

RoHS

COMPLIANT

• Very low conduction losses

• Industry standard package

• Completely lead (Pb)-free

• Designed and qualified for industrial level

INT-A-PAK

BENEFITS

PRODUCT SUMMARY

V

CES

I

DC 480 A

C

V

at 200 A, 25 °C 1.13 V

CE(on)

600 V

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized as output inverter stage for TIG
welding machines

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

CES

C

CM

LM

GE

ISOL

D

TC = 25 °C 480

= 116 °C 200

T

C

Any terminal to case, t = 1 min 2500

TC = 25 °C 830

T

= 85 °C 430

C

600 V

800

800

± 20

A

V

W

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Gate to emitter leakage current I

Document Number: 94362 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

BR(CES)VGE

CE(on)

GE(th)IC

CES

GES

= 0 V, IC = 1 mA 600 - -

VGE = 15 V, IC = 200 A - 1.13 1.21

V

= 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18

GE

= 0.25 mA 3 4.5 6

VGE = 0 V, VCE = 600 V - 0.025 1

V

= 0 V, VCE = 600 V, TJ = 125 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

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mA

VCollector to emitter voltage V