C&H Technology GA200HS60S1PbF User Manual

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Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 200 A

FEATURES

• Generation 4 IGBT technology

GA200HS60S1PbF

• Standard speed: Optimized for hard switching
operating frequencies DC to 1 kHz

RoHS

COMPLIANT

• Very low conduction losses

• Industry standard package

• Completely lead (Pb)-free

• Designed and qualified for industrial level

INT-A-PAK

BENEFITS

PRODUCT SUMMARY

V

CES

I

DC 480 A

C

V

at 200 A, 25 °C 1.13 V

CE(on)

600 V

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized as output inverter stage for TIG
welding machines

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

CES

C

CM

LM

GE

ISOL

D

TC = 25 °C 480

= 116 °C 200

T

C

Any terminal to case, t = 1 min 2500

TC = 25 °C 830

T

= 85 °C 430

C

600 V

800

800

± 20

A

V

W

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Gate to emitter leakage current I

Document Number: 94362 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

BR(CES)VGE

CE(on)

GE(th)IC

CES

GES

= 0 V, IC = 1 mA 600 - -

VGE = 15 V, IC = 200 A - 1.13 1.21

V

= 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18

GE

= 0.25 mA 3 4.5 6

VGE = 0 V, VCE = 600 V - 0.025 1

V

= 0 V, VCE = 600 V, TJ = 125 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

www.vishay.com

mA

VCollector to emitter voltage V

GA200HS60S1PbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Standard Speed IGBT), 200 A

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge Q

Gate to collector charge Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

g

ge

gc

on

off

ts

on

off

ts

ies

oes

res

IC = 200 A

= 400 V

V

CC

= 15 V

V

GE

IC = 200 A, VCC = 480 V, VGE = 15 V

= 10 Ω

R

G

Freewheeling diode: 30EPH06

IC = 200 A, VCC = 480 V, VGE = 15 V

= 10 Ω

R

G

Freewheeling diode: 30EPH06, T

= 125 °C

J

VGE = 0 V

= 30 V

V

CC

f = 1.0 MHz

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case per leg R

Case to sink R

Mounting torque

case to heatsink - - 4

case to terminal 1, 2, 3 - - 3

J

Stg

thJC

thCS

Weight - 185 - g

- 40 - 150

- 40 - 125

- - 0.15

-0.1-

- 1600 1700

- 260 340

- 580 670

-30-

-50-

-80-

-34-

-104-

- 138 151

- 32 500 -

-2080-

-380-

nCGate to emitter charge Q

mJTurn-off switching loss E

mJTurn-off switching loss E

pFOutput capacitance C

°C

°C/W

Nm

1000

VGE = 15 V
500 µs pulse width

TJ = 125 °C

100

TJ = 25 °C

- Collector to Emitter Current (A)

C

I

10

0.6

0.8

1.0

VCE - Collector to Emitter Voltage (V)

1.2 1.4

1.6

1000

100

- Collector to Emitter Current (A)

C

I

TJ = 125 °C

10

TJ = 25 °C

1

4.0

5.0 5.5 6.0 6.5 7.0 7.5

4.5

VGE - Gate to Emitter Voltage (V)

Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94362

2 Revision: 29-Apr-08

GA200HS60S1PbF

"Half-Bridge" IGBT INT-A-PAK

(Standard Speed IGBT), 200 A

160

140

120

100

80

60

40

- Case Temperature (°C)

C

T

20

0

Fig. 3 - Case Temperature vs. Maximum Collector Current

1.6

1.4

1.2

1.0

- Collector to Emitter Voltage (V)

CE

V

0.8
20 40 60 80 100 120 140

Fig. 4 - Typical Collector to Emitter Voltage vs.

100 200 300 400 500

0

Maximum DC Collector Current (A)

400 A

200 A

120 A

TJ - Junction Temperature (°C)

Junction Temperature

160

Vishay High Power Products

50

E

45

40

TJ = 25 °C
V

= 480 V

CE

= 15 V

V

GE

35

= 200 A

I

C

30

Switching Losses (mJ)

25

Freewheeling
diode 30EPH06

20

0 1020304050

RG - Gate Resistance (Ω)

Fig. 6 - Typical Switching Losses vs. Gate Resistance

80

T

= 125 °C

J

70

V

= 480 V

CE

V

= 15 V

GE

60

50

40

30

20

Switching Losses (mJ)

10

0

= 10 Ω

V

GE

Freewheeling

diode 30EPH06

50 75 100 175 200125 150

IC - Collector to Emitter Current (A)

Fig. 7 - Typical Switching Losses vs.

Collector to Emitter Current

typical

off

Eon typical

E

off

Eon typical

typical

- Gate to Emitter Voltage (V)

GE

V

16

14

12

10

8

6

4

2

0

0 300 600

Typical value

1200

900

1500

QG - Total Gate Charge (nC)

1800

6, 7

4, 5

Functional Diagram

3

6

7

1

4

5

2

3

1

2

Electrical Diagram

Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage

Document Number: 94362 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 3

GA200HS60S1PbF

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

GA 200 H S 60 S 1 PbF

1 - Essential part number IGBT modules

2 - Current rating (200 = 200 A)

3 - Circuit configuration (H = Half bridge without f/w diode)

4 - INT-A-PAK

5 - Voltage code (60 = 600 V)

6 - Speed/type (S = Standard speed IGBT)

7 - Assy location Italy

8 - PbF = Lead (Pb)-free

"Half-Bridge" IGBT INT-A-PAK

(Standard Speed IGBT), 200 A

51324678

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95067

www.vishay.com For technical questions, contact: [e-mail]
4 Revision: 29-Apr-08

Document Number: 94362

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All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1