C&H Technology GA100TS60SF User Manual
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Bulletin I27201 rev. A 01/06
Document Number: 93619
www.vishay.com
1
GA100TS60SF
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features
• Standard Speed PT Igbt Technology
• Fred PT Antiparallel diodes with Fast
recovery
• Very Low Conduction Losses
•Al2O3 DBC
• UL Pending
Benefits
• Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
Absolute Maximum Ratings
Parameters Max Units
V
I
I
I
V
V
P
CES
C
CM
LM
GE
ISOL
D
Collector-to-Emitter Voltage 600 V
Continuos Collector Current @ TC = 25°C 220 A
Pulsed Collector Current 440
Peak Switching Current 440
Gate-to-Emitter Voltage ± 20 V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Maximum Power Dissipation @ TC = 25°C 780 W
V
@ I
INT-A-PAK
@ TC = 130°C 100
@ TC = 100°C 312
V
= 600V
CES
I
= 220A DC
C
typ. = 1.39V
CE(on)
= 200A TJ = 25°C
C
GA100TS60SF
Document Number: 93619
www.vishay.com
2
Bulletin I27201 rev. A 01/06
Electrical Characteristics @ T
Parameters Min Typ Max Units Test Conditions
V
V
V
I
V
I
CES
GES
Collector-to-Emitter Breakdown Voltage 60 0 V VGE = 0V, IC = 1mA
BRCES
Collector-to-Emitter Voltage 1.11 1.28 VGE = 15V, IC = 100A
CE(on)
Gate Threshold Voltage 3 6 IC = 0.25mA
GE(th)
Collector-to-Emiter Leakage 1 mA VGE = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = 600V, TJ = 125°C
Diode Forward Voltage drop 1.44 1.96 V IC = 100A, VGE = 0V
FM
Gate-to-Emitter Leakage Current ± 25 0 n A VGE = ± 20V
Switching Characteristics @ T
Parameters Min Typ Max Units Test Conditions
Q
Q
Q
t
r
t
f
E
E
E
E
E
E
C
C
C
t
rr
I
rr
Q
t
rr
I
rr
Q
Total Gate Charge 640 70 0 nC IC = 100A
g
Gate-Emitter Charge 108 12 0 VCC = 400V
ge
Gate-Collector Charge 230 30 0 VGE = 15V
gc
Rise Time 0.45 µs I
Fall Time 1.0 R
Turn-On Switching Energy 4 6 mJ
on
Turn-Off Switching Energy 23 29
off
Total Switching Energy 27 35
ts
Turn-On Switching Energy 6 12 mJ I
on
Turn-Off Switching Energy 35 40 R
off
Total Switching Energy 41 52
ts
Input Capacitance 16250 pF VGE = 0V
ies
Output Capacitance 1040 VCC = 30V
oes
Reverse Transfer Capacitance 190 f = 1.0 MHz
res
Diode Reverse Recovery Time 91 155 ns IF = 50A, dIF/dt = 200A/µs
Diode Peak Reverse Current 10.6 15 A VRR = 200V
Diode Recovery Charge 500 900 nC
rr
Diode Reverse Recovery Time 180 344 ns IF = 50A, dIF/dt = 200A/µs
Diode Peak Reverse Current 17 20.5 A VRR = 200V
Diode Recovery Charge 1633 2315 nC TJ = 125°C
rr
= 25°C (unless otherwise specified)
J
1.39 IC = 200A
1.08 1.22 VGE = 15V, IC = 100A, TJ = 125°C
1.25 1.54 IC = 100A, VGE = 0V, TJ = 125°C
= 25°C (unless otherwise specified)
J
= 100A, VCC = 480V, VGE = 15V
C
= 15Ω
g
= 100A, VCC = 480V, VGE = 15V
C
= 15Ω, T
g
= 125°C
J
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
T
J
T
STG
R
thJC
R
thCS
T Mounting torque Case to heatsink 4 Nm
Operating Junction Temperature Range - 40 150 °C
Storage Temperature Range - 40 125
Junction-to-Case per Switch 0.16 °C/ W
Per Diode 0.48
Case-to-Sink Per Module 0.1
Case to terminal 1, 2, 3 3
Weight 185 g
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