C&H Technology GA100TS60SF User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
Bulletin I27201 rev. A 01/06
Document Number: 93619
www.vishay.com
1
GA100TS60SF
"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT
Features
Standard Speed PT Igbt Technology
• Fred PT Antiparallel diodes with Fast recovery
• Very Low Conduction Losses
•Al2O3 DBC
• UL Pending
Benefits
Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency up to 1 KHz
• Very low junction-to-case thermal resistance
• Low EMI
Absolute Maximum Ratings
Parameters Max Units
V
I
I
I
V
V
P
CES
C
CM
LM
GE
ISOL
D
Collector-to-Emitter Voltage 600 V
Continuos Collector Current @ TC = 25°C 220 A
Pulsed Collector Current 440
Peak Switching Current 440
Gate-to-Emitter Voltage ± 20 V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500
Maximum Power Dissipation @ TC = 25°C 780 W
V
@ I
INT-A-PAK
@ TC = 130°C 100
@ TC = 100°C 312
V
= 600V
CES
I
= 220A DC
C
typ. = 1.39V
CE(on)
= 200A TJ = 25°C
C
GA100TS60SF
Document Number: 93619
www.vishay.com
2
Bulletin I27201 rev. A 01/06
Electrical Characteristics @ T
Parameters Min Typ Max Units Test Conditions
V
V
V
I
V
I
CES
GES
Collector-to-Emitter Breakdown Voltage 60 0 V VGE = 0V, IC = 1mA
BRCES
Collector-to-Emitter Voltage 1.11 1.28 VGE = 15V, IC = 100A
CE(on)
Gate Threshold Voltage 3 6 IC = 0.25mA
GE(th)
Collector-to-Emiter Leakage 1 mA VGE = 0V, VCE = 600V
Current 10 VGE = 0V, VCE = 600V, TJ = 125°C
Diode Forward Voltage drop 1.44 1.96 V IC = 100A, VGE = 0V
FM
Gate-to-Emitter Leakage Current ± 25 0 n A VGE = ± 20V
Switching Characteristics @ T
Parameters Min Typ Max Units Test Conditions
Q Q
Q
t
r
t
f
E E E E E E
C C C t
rr
I
rr
Q
t
rr
I
rr
Q
Total Gate Charge 640 70 0 nC IC = 100A
g
Gate-Emitter Charge 108 12 0 VCC = 400V
ge
Gate-Collector Charge 230 30 0 VGE = 15V
gc
Rise Time 0.45 µs I Fall Time 1.0 R Turn-On Switching Energy 4 6 mJ
on
Turn-Off Switching Energy 23 29
off
Total Switching Energy 27 35
ts
Turn-On Switching Energy 6 12 mJ I
on
Turn-Off Switching Energy 35 40 R
off
Total Switching Energy 41 52
ts
Input Capacitance 16250 pF VGE = 0V
ies
Output Capacitance 1040 VCC = 30V
oes
Reverse Transfer Capacitance 190 f = 1.0 MHz
res
Diode Reverse Recovery Time 91 155 ns IF = 50A, dIF/dt = 200A/µs Diode Peak Reverse Current 10.6 15 A VRR = 200V Diode Recovery Charge 500 900 nC
rr
Diode Reverse Recovery Time 180 344 ns IF = 50A, dIF/dt = 200A/µs
Diode Peak Reverse Current 17 20.5 A VRR = 200V Diode Recovery Charge 1633 2315 nC TJ = 125°C
rr
= 25°C (unless otherwise specified)
J
1.39 IC = 200A
1.08 1.22 VGE = 15V, IC = 100A, TJ = 125°C
1.25 1.54 IC = 100A, VGE = 0V, TJ = 125°C
= 25°C (unless otherwise specified)
J
= 100A, VCC = 480V, VGE = 15V
C
= 15
g
= 100A, VCC = 480V, VGE = 15V
C
= 15, T
g
= 125°C
J
Thermal- Mechanical Specifications
Parameters Min Typ Max Units
T
J
T
STG
R
thJC
R
thCS
T Mounting torque Case to heatsink 4 Nm
Operating Junction Temperature Range - 40 150 °C
Storage Temperature Range - 40 125
Junction-to-Case per Switch 0.16 °C/ W
Per Diode 0.48
Case-to-Sink Per Module 0.1
Case to terminal 1, 2, 3 3
Weight 185 g
GA100TS60SF
Document Number: 93619
www.vishay.com
3
Bulletin I27201 rev. A 01/06
1000
Vge = 15V
100
Tj = 25˚C
, Collector-to-Emitter Current (A)
C
I
Tj = 125˚C
10
0.6 0.8 1 1.2 1.4 1.6 1.8
VCE, Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
240
200
160
1000
T = 125˚C
J
100
T = 25˚C
J
10
, Collector-to-Emitter Current (A)
C
I
Vce = 10V 380µs PULSE WIDTH
1
5.5 6.5 7.5 8.5
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
1.5
I = 200A
C
1.3
120
80
40
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig. 3 - Maximum Collector Current
vs. Case Temperature
I = 100A
1.1
C
I = 50A
0.9
, Collector-to-Emitter Voltage (V)
CE
V
0.7 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
GA100TS60SF
Document Number: 93619
www.vishay.com
4
Bulletin I27201 rev. A 01/06
20
Vcc = 400V Ic = 100A
15
10
, Gate-to-Emitter Voltage (V)
5
GE
V
0
0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
60
Tj = 125˚C Vce = 480V
50
Vge = 15V Rge = 15
40
35
Tj = 25˚C, Vce = 480V Vge = 15V, Ic = 100A
30 25
Eoff
20 15 10
Switching Losses (mJ)
Eon
5 0
10 20 30 40 50
RG, Gate Reistance (Ω)
Fig. 6 - Typical Switching Losses vs Gate
Eoff
Resistance
30
20
Switching Losses (mJ)
10
Eon
0
0 40 80 120 160
IC, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
(A)
100
1000
10000
100 1000
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 25˚C
10
100
1000
100 1000
Vr = 200V
If = 50A, Tj = 125˚C
If = 50A, Tj = 25˚C
Document Number: 93619
www.vishay.com
5
F
GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
100
Tj = 125˚C
10
Instantaneous Forward Current - I
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop- VFM (V)
Fig. 8 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
Vr = 200V
If = 50A, Tj = 125˚C
Tj = 25˚C
(ns)
rr
t
dif /dt - A/µs
Fig. 9 - Typical Reverse Recovery vs. dif /dt
(A)
10
RRM
I
1
100 1000
Fig. 10 - Typical Reverse Recovery Current
If = 50A, Tj = 25˚C
dif /dt - A/µs
vs. dif /dt
(nC)
RR
Q
dif /dt - A/µs
Fig. 11 - Typical Stored Charge vs. dif /dt
GA100TS60SF
Document Number: 93619
www.vishay.com
6
Bulletin I27201 rev. A 01/06
Outline Table
Ordering Information Table
Device Code
GA 100 T S 60 S F
1 - Essential Part Number IGBT modules
2 - Current rating (100 = 100A)
3 - Circuit Configuration (T = Half Bridge)
4 - Int-A-Pak
5 - Voltage Code (60 = 600V)
6 - Speed/ Type (S = Standard Speed IGBT)
7 - Diode Type
All dimensions are in millimeters
1 2 345 6 7
GA100TS60SF
Document Number: 93619
www.vishay.com
7
Bulletin I27201 rev. A 01/06
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
01/06
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
Loading...