C&H Technology GA100TS120UPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

VS-GA100TS120UPbF

INT-A-PAK

www.vishay.com

Vishay Semiconductors

INT-A-PAK™ “Half-Bridge” (Ultrafast Speed IGBT), 100 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode

• Very low conduction and switching losses

•HEXFRED

• Industry standard package

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

®

antiparallel diodes with ultrasoft recovery

PRODUCT SUMMARY

V

CES

DC 182 A

I

C

at 100 A, 25 °C 2.25 V

V

CE(on)

1200 V

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,
SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current
See fig. 17

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction temperature range T

Storage temperature range T

CES

CM

I

LM

FM

ISOL

Stg

C

GE

TC = 25 °C 182

= 93 °C 100

T

C

Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature

Any terminal to case, t = 1 minute 2500

D

J

TC = 25 °C 520

T

= 85 °C 270

C

1200 V

200

200

200

± 20

- 40 to + 150

- 40 to + 125

A

V

W

°C

Revision: 26-Mar-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94428

VS-GA100TS120UPbF

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

VGE = 0 V, IC = 1 mA 1200 - -

VGE = 15 V, IC = 100 A - 2.25 3

Gate threshold voltage V

Temperature coefficient of threshold voltage V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Maximum diode forward voltage V

Gate to emitter leakage current I

CE(on)

GE(th)

fe

CES

FM

GES

V

= 15 V, IC = 100 A, TJ = 125 °C - 2 2.4

GE

IC = 1.25 mA 3.0 4.4 6.0

/TJVCE = VGE, IC = 1.25 mA - - 12 - mV/°C

VCE = 25 V, IC = 100 A
Pulse width 50 μs, single shot

VGE = 0 V, VCE = 1200 V - 0.03 1.0

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 4.2 10

GE

VGE = 0 V, IF = 100 A - 3.3 4.0

V

= 0 V, IF = 100 A, TJ = 125 °C - 3.2 3.8

GE

VGE = ± 20 V - - 250 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode peak rate of fall of recovery during t

b

Note

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

dI

d(on)

d(off)

off

ts

d(on)

d(off)

off

ts

oes

(rec)M

g

ge

gc

r

f

on

(1)

(1)

r

f

on

(1)

(1)

ies

res

rr

rr

rr

VCC = 400 V
I

= 124 A

C

Rg1 = 15 
R

= 0 

g2

I

= 100 A

C

= 720 V

V

CC

= ± 15 V

V

GE

T

= 25 °C

J

Rg1 = 15 

= 0 

R

g2

I

= 100 A

C

V

= 720 V

CC

= ± 15 V

V

GE

= 125 °C

T

J

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

IC = 100 A

= 15 

R

g1

R

= 0 

g2

V

= 720 V

/dt - 1916 - A/μs

CC

dI/dt = 1300 A/μs

Vishay Semiconductors

- 136 - S

- 830 1245

- 140 210

- 275 412

- 570 -

-85-

- 581 -

- 276 -

-7.6-

-6.8-

- 14.4 -

- 571 -

-89-

- 606 -

- 649 -

-10-

-16-

-2645

- 18 672 -

- 830 -

- 161 -

- 149 - ns

- 104 - A

- 7664 - nC

VCollector to emitter voltage V

mA

V

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching energy E

ns

mJTurn-off switching energy E

pFOutput capacitance C

Revision: 26-Mar-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94428

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GA100TS120UPbF

0.1 1 10 100

0

25

50

75

100

f - Frequency (kHz)

Load Current (A)

Duty cycle: 50 %
T

J

= 125 °C

T

sink

= 90 °C
Gate drive as specified
Power dissipation = 170 W

Ideal diodes

60 % of rated

voltage

Square wave:

-

0.5 1.0 1.5 2.0 2.5 3.0

1

10

100

1000

VGE = 15 V
500 µs pulse width

25 °C

125 °C

VCE - Collector to Emitter Voltage (V)

I

C

- Collector Current (A)

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

1

10

100

1000

VGE - Gate to Emitter Voltage (V)

I

C

- Collector to Emitter Current (A)

VGE = 20 V
500 µs pulse width

125 °C

25 °C

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Thermal resistance, junction to case

Thermal resistance, case to sink per module R

Mounting torque

case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0

case to heatsink - 4.0

Weight of module 200 - g

IGBT

R

thJC

thCS

Vishay Semiconductors

-0.24

°C/WDiode - 0.35

0.1 -

Nm

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

Revision: 26-Mar-12

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

of Fundamental)

RMS

3

, [e-mail], [e-mail]

Document Number: 94428