C&H Technology GA100TS120UPbF User Manual

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VS-GA100TS120UPbF

INT-A-PAK

www.vishay.com

Vishay Semiconductors

INT-A-PAK™ “Half-Bridge” (Ultrafast Speed IGBT), 100 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode

• Very low conduction and switching losses

•HEXFRED

• Industry standard package

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

®

antiparallel diodes with ultrasoft recovery

PRODUCT SUMMARY

V

CES

DC 182 A

I

C

at 100 A, 25 °C 2.25 V

V

CE(on)

1200 V

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,
SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current
See fig. 17

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction temperature range T

Storage temperature range T

CES

CM

I

LM

FM

ISOL

Stg

C

GE

TC = 25 °C 182

= 93 °C 100

T

C

Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature

Any terminal to case, t = 1 minute 2500

D

J

TC = 25 °C 520

T

= 85 °C 270

C

1200 V

200

200

200

± 20

- 40 to + 150

- 40 to + 125

A

V

W

°C

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

VGE = 0 V, IC = 1 mA 1200 - -

VGE = 15 V, IC = 100 A - 2.25 3

Gate threshold voltage V

Temperature coefficient of threshold voltage V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Maximum diode forward voltage V

Gate to emitter leakage current I

CE(on)

GE(th)

fe

CES

FM

GES

V

= 15 V, IC = 100 A, TJ = 125 °C - 2 2.4

GE

IC = 1.25 mA 3.0 4.4 6.0

/TJVCE = VGE, IC = 1.25 mA - - 12 - mV/°C

VCE = 25 V, IC = 100 A
Pulse width 50 μs, single shot

VGE = 0 V, VCE = 1200 V - 0.03 1.0

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 4.2 10

GE

VGE = 0 V, IF = 100 A - 3.3 4.0

V

= 0 V, IF = 100 A, TJ = 125 °C - 3.2 3.8

GE

VGE = ± 20 V - - 250 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy E

Total switching energy E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode peak rate of fall of recovery during t

b

Note

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

dI

d(on)

d(off)

off

ts

d(on)

d(off)

off

ts

oes

(rec)M

g

ge

gc

r

f

on

(1)

(1)

r

f

on

(1)

(1)

ies

res

rr

rr

rr

VCC = 400 V
I

= 124 A

C

Rg1 = 15 
R

= 0 

g2

I

= 100 A

C

= 720 V

V

CC

= ± 15 V

V

GE

T

= 25 °C

J

Rg1 = 15 

= 0 

R

g2

I

= 100 A

C

V

= 720 V

CC

= ± 15 V

V

GE

= 125 °C

T

J

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

IC = 100 A

= 15 

R

g1

R

= 0 

g2

V

= 720 V

/dt - 1916 - A/μs

CC

dI/dt = 1300 A/μs

Vishay Semiconductors

- 136 - S

- 830 1245

- 140 210

- 275 412

- 570 -

-85-

- 581 -

- 276 -

-7.6-

-6.8-

- 14.4 -

- 571 -

-89-

- 606 -

- 649 -

-10-

-16-

-2645

- 18 672 -

- 830 -

- 161 -

- 149 - ns

- 104 - A

- 7664 - nC

VCollector to emitter voltage V

mA

V

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching energy E

ns

mJTurn-off switching energy E

pFOutput capacitance C

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VS-GA100TS120UPbF

0.1 1 10 100

0

25

50

75

100

f - Frequency (kHz)

Load Current (A)

Duty cycle: 50 %
T

J

= 125 °C

T

sink

= 90 °C
Gate drive as specified
Power dissipation = 170 W

Ideal diodes

60 % of rated

voltage

Square wave:

-

0.5 1.0 1.5 2.0 2.5 3.0

1

10

100

1000

VGE = 15 V
500 µs pulse width

25 °C

125 °C

VCE - Collector to Emitter Voltage (V)

I

C

- Collector Current (A)

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5

1

10

100

1000

VGE - Gate to Emitter Voltage (V)

I

C

- Collector to Emitter Current (A)

VGE = 20 V
500 µs pulse width

125 °C

25 °C

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

Thermal resistance, junction to case

Thermal resistance, case to sink per module R

Mounting torque

case to terminal 1, 2 and 3 For screws M5 x 0.8 - 3.0

case to heatsink - 4.0

Weight of module 200 - g

IGBT

R

thJC

thCS

Vishay Semiconductors

-0.24

°C/WDiode - 0.35

0.1 -

Nm

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

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Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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of Fundamental)

RMS

3

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0 40 80 120 160 200

0

20

40

60

80

100

120

140

160

T

C

- Case Temperature (°C)

Maximum DC Collector Current (A)

DC

0 30 60 90 120 150

1.5

2.0

2.5

3.0

VGE = 15 V
500 µs pulse width

TJ - Junction Temperature (°C)

V

CE

- Collector to Emitter Voltage (V)

IC = 50 A

IC = 200 A

IC = 100 A

0.01

0.1

1

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

10

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0 300 600 900

0

4

8

12

16

20

QG - Total Gate Charge (nC)

V

GE

- Gate to Emitter Voltage (V)

VCC = 400 V
I

C

= 113 A

VS-GA100TS120UPbF

Vishay Semiconductors

35 000

28 000

21 000

Fig. 4 - Case Temperature vs.

Maximum Collector Current

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

gc

C

= Cce + C

C

ies

oes

gc

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

C

14 000

C - Capacitance (pF)

7000

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C

0

1 10 100

VCE - Collector to Emitter Voltage (V)

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oes

res

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

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Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

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Total Switching Losses (mJ)

IC - Collector Current (A)

0 50 100 150 200

0

10

20

30

40

50

60

I

C

- Collector Current (A)

0

100

200

300

0 300 600 900 1200 1500

VCE - Collector to Emitter Voltage (V)

Safe operating area

VGE = 20 V
T

J

= 125 °C

V

CE

measured at terminal (peak voltage)

1

100

10

1000

0.5 1.0 1.5 2.0 2.5 3.0 3.5

VF - Forward Voltage Drop (V)

I

F

- Instantaneous Forward Current (A)

TJ = 125 °C

TJ = 25 °C

40

35

30

25

Total Switching Losses (mJ)

20

10 20 30 40 50

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

100

IC = 200 A

VS-GA100TS120UPbF

Vishay Semiconductors

Fig. 12 - Reverse Bias SOA

IC = 100 A

10

Total Switching Losses (mJ)

1

0 30 60 90 120 150

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

Fig. 11 - Typical Switching Losses vs. Collector Current

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IC = 50 A

Fig. 13 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

16 000

12 000

(nC)

rr

Q

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

8000

4000

0

400 1200 1600

800

dIF/dt (A/µs)

Fig. 14 - Typical Stored Charge vs. dI

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IF = 200 A

= 100 A

I

F

= 50 A

I

F

2000

/dt

F

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∫

t2

t1

5 % V

CE

I

C

I

pk

V

CC

10 % I

C

V

CE

t1

t2

D.U.T. voltage
and current

Gate voltage D.U.T.

+ V

G

10 % + V

G

90 % I

C

t

r

t

d(on)

Eon =

VCE IC dt

VS-GA100TS120UPbF

Vishay Semiconductors

240

200

VR = 720 V

= 125 °C

T

J

= 25 °C

T

J

160

(ns)

rr

t

120

80

400 800 1600 2000

1200

dIF/dt (A/µs)

IF = 200 A

= 100 A

I

F

= 50 A

I

F

250

200

IF = 200 A

= 100 A

I

F

= 50 A

I

F

150

(A)

100

RRM

I

50

0

400 800 1600 2000

VR = 720 V
T
T

1200

= 125 °C

J

= 25 °C

J

dIF/dt (A/µs)

Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt Fig. 16 - Typical Recovery Current vs. dIF/dt

L2

L1

+

V

CC

-

+ V

- V

G2

R

G2

­R

+

G2

G1

R

G2

R

G1

L

L3

Fig. 17a - Test Circuit for Measurement of I

I

, t

rr

d(on)

90 % V

+ V

GE

V

CE

10 % V

CE

t

d(off)

t1

Defining E

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I

C

Fig. 17b - Test Waveforms for Circuit of Fig. 18a,

V

= 60 % of BV

CC

LS = L1 + L2 + L3

= ± 15 V

V

GE

, tr, t

, t

d(off)

GE

90 % I

I

C

t

f

t2

, t

, t

off

d(off)

LM

f

E

f

, Eon, E

C

5 % I

=

off

∫

CES

off(diode)

C

t1 + 5 µs

Vce ic dt

VCE IC dt

t1

, trr, Qrr,

Fig. 17c - Test Waveforms for Circuit of Fig. 18a,

I

C

t

x

10 % V

V

pk

Diode reverse
recovery energy

I

Defining E

CC

rr

, t

, t

on

d(on)

r

t

t

rr

10 % I

Diode recovery
waveforms

E

rec

t3

t4

Qrr =

=

rr

VD IC dt

∫

t3

∫

t4

id dt

IC dt

t

x

rr

V

CC

Fig. 17d - Test Waveforms for Circuit of Fig. 18a,

Defining E

6

, trr, Qrr, I

rec

rr

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V

G

Gate signal
device under test

Current D.U.T.

Voltage in D.U.T.

Current in D1

t0

t1

t2

2 - Insulated gate bipolar transistor (IGBT)

1 - Vishay Semiconductors product

3 - Generation 4, IGBT silicon, DBC construction

4 - Current rating (100 = 100 A)

5 - Circuit configuration (T = Half-bridge)

6 - Package indicator (INT-A-PAK)

7 - Voltage rating (120 = 1200 V)

8 - Speed/type (U = Ultrafast)

9

- PbF = Lead (Pb)-free

Device code

51 32 4 6 7 8 9

GVS- A 100 T S 120 U PbF

VS-GA100TS120UPbF

Vishay Semiconductors

Fig. 17e - Macro Waveforms for Figure 18a‘s Test Circuit

L

1000 V

50 V

6000 µF

100 V

* Driver same type as D.U.T.; VC = 80 % of VCE (max)

Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I

V

*

C

d

Fig. 18 - Clamped Inductive Load Test Circuit Fig. 19 - Pulsed Collector Current Test Circuit

ORDERING INFORMATION TABLE

D.U.T.

0 - 480 V

RL ==

4 x I

480 V

at 25 °C

C

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1

2

3

5

4

7

6

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CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95173

Vishay Semiconductors

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DIMENSIONS in millimeters (inches)

30

(1.18)

INT-A-PAK IGBT

9 (0.33)

7 (0.28)

28 (1.10)

Outline Dimensions

Vishay Semiconductors

29 (1.15)

14.5

35 (1.38)

3 screws M6 x 10

(0.57)

(Ø 0.25)

17 (0.67)

Ø 6.5

1

23 (0.91)

2

66 (2.60)

94 (3.70)

80 (3.15)

23 (0.91)

3

14.3

(0.56)

5 (0.20)

7

6

2.8 x 0.8
(0.11 x 0.03)

4

5

37 (1.44)

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000