C&H Technology GA100NA60UP User Manual

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SOT-227

PRODUCT SUMMARY

V

CES

I

DC 100 A

C

V

at 50 A, 25 °C 1.49 V

CE(on)

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

FEATURES

• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies 0 to 40 kHz in
hard switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolated package (2500 V AC/RMS)

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• UL pending

• Totally lead (Pb)-free

• Designed and qualified for industrial market

BENEFITS

• Designed for increased operating efficiency in power

600 V

conversion: PFC, UPS, SMPS, welding, induction heating

• Lower overall losses available at frequencies ≥ 20 kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

• Lower EMI, requires less snubbing

• Plug in compatible with other SOT-227 packages

GA100NA60UP

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6 to 32 or M3 screw

CES

TC = 25 °C 100

C

T

= 100 °C 50

C

CM

LM

ISOL

, T

T

J

Repetitive rating: V
by maximum junction temperature (fig. 20)

GE

Any terminal to case, t = 1 min 2500

TC = 25 °C 250

D

T

= 100 °C 100

C

Stg

= 20 V; pulse width limited

GE

600 V

200

200

± 20

W

- 55 to + 150 °C

12

(1.3)

Ibf · in

(N · m)

A

V

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, IGBT R

Thermal resistance, junction to case, diode R

Case to sink, flat, greased surface R

Weight of module 30 - g

θJC

θJC

θCS

-0.50

-1.0

0.05 -

°C/W

Document Number: 94543 For technical questions, contact: [e-mail]
Revision: 13-May-08 1

www.vishay.com

GA100NA60UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coeffecient of
breakdown voltage

ΔV

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 µA

= 0 V, IC = 1.0 mA

V

/ΔT

GE

J

VGE = 15 V, IC = 50 A

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

ΔV

GE(th)

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

/ ΔTJVCE = VGE, IC = 250 µA - - 7.6 - mV/°C

fe

CES

FM

GES

= 15 V, IC = 100 A - 1.80 -

GE

= 15 V, IC = 50 A, TJ = 150 °C - 1.47 -

V

GE

See fig. 1, 4

VCE = VGE, IC = 250 µA 3.0 - 6.0

VCE = 100 V, IC = 50 A 34 52 - S

VGE = 0 V, VCE = 600 V - - 250 µA

= 0 V, VCE = 600 V, TJ = 150 °C - - 1.3 mA

V

GE

IC = 50 A

= 50 A, TJ = 150 °C - 1.16 1.3

I

C

See fig. 12

VGE = ± 20 V - - ± 100 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall recovery
during t

b

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 13-May-08

dI

d(on)

d(off

t

d(on)

E

d(off)

ies

oes

res

rr

rr

(rec)M

g

ge

gc

r

f

on

off

ts

tot

r

f

ts

E

rr

IC = 50 A
V

CC

V

GE

= 400 V
= 15 V

See fig. 7

TJ = 25 °C

)-240-

I

= 60 A, VCC = 480 V

C

V

= 15 V, RG = 5.0 Ω

GE

energy losses include “tail” and
diode reverse recovery

TJ = 150 °C
I

= 60 A, VCC = 480 V

C

= 15 V, RG = 5.0 Ω

V

GE

energy losses include “tail” and
diode reverse recovery

VGE = 0 V
V

= 30 V

CC

See fig. 6

ƒ = 1.0 MHz

/dt

TJ = 25 °C

T

= 125 °C - 120 180

J

TJ = 25 °C

T

= 125 °C - 11 16

J

TJ = 25 °C

T

= 125 °C - 780 1200

J

T

= 25 °C

J

= 125 °C - 220 -

T

J

See fig. 13

See fig. 14

See fig. 15

See fig. 16

I

= 50 A

F

= 200 V

V

R

dI/dt = 200 A/µs

600 - - V

-0.36 - V/°C

- 1.49 2.1

VV

-1.31.6
V

- 430 640

-4872

nCGate emitter charge (turn-on) Q

- 130 190

-57 -

-80 -

ns

-120 -

-0.41 -

-2.51 -

mJTurn-off switching loss E

-2.924.4

-57 -

-80 -

ns

-380 -

-170 -

-4.78 - mJ

-2.0 - nH

-7400 -

-730 -

pFOutput capacitance C

-90 -

- 90 140

-7.311

- 360 550

-370 -

ns

A

nC

A/µs

Document Number: 94543

GA100NA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

1000

1000

°

°

T = 25 C

T = 25 C

?

J

J

T = 150 C

T = 150 C

?

J

100

100

10

10

C

C

I , Collector-to-Emitter Current (A)

I , Collector-to-Emitter Current (A)

1

1

0.0 1.0 2.0 3.0 4.0 5.0

0.0 1.0 2.0 3.0 4.0 5.0

V , Collector-to-Emitter Voltage (V)

V , Collector-to-Emitter Voltage (V)

CE

CE

?

Fig. 1 - Typical Output Characteristics

1000

°

T = 150 C

100

J

J

V = 15V

V = 15V

GE

GE

20μs PULSE WIDTH

20μs PULSE WIDTH

Vishay High Power Products

100

°

°

80

60

40

20

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 3 - Maximum Collector Current vs.

Case Temperature

2.5

V = 15V

GE

?

80 us PULSE WIDTH

2.0

?

I = A100

C

°

T = 25 C

?

GE

J

V = 50V

CC

5μs PULSE WIDTH

10

C

I , Collector-to-Emitter Current (A)

1

5.0 6.0 7.0 8.0 9.0

V , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Transfer Characteristics

1

D = 0.50

thJC

0.1

0.20

0.10

0.05

0.02

0.01

0.01
SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction to Case

1.5

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

Fig. 4 - Typical Collector to Emitter Voltage vs.

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

T , Junction Temperature ( C)

J

Junction Temperature

P

DM

t

1

t

2

1 2

J DM thJC C

?

I = A50

C

?

I = A25

C

°

Document Number: 94543 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 13-May-08 3

GA100NA60UP

Vishay High Power Products

14000

12000

10000

8000

6000

C, Capacitance (pF)

4000

2000

0

1 10 100

20

V = 400V

16

12

8

V

=

0V,

GE

C

iesge gc , ce

C

resgc

C

oes cegc

C

?

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

=

C

+ C

=

C

=

C

C SHORTED

+ C

Fig. 6 - Typical Capacitance vs.

Collector to Emitter Voltage

CC

I = 50A

C

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

100

RG= 5.0Ω
VGE= 15V
VCC= 480V

)Jm( sessoL gnihctiwS latoT

10

1

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Fig. 9 - Typical Switching Losses vs.

12

RG= 5.0Ω
TJ = 150°C

10

VGE= 15V

)J

VCC= 480V

m

(

sessoL gnihc

8

6

tiwS latoT

4

IC= 120A

IC= 60A

IC= 30A

TJ, Junction Temperature (°C)

Junction Temperature

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 100 200 300 400 500

Q , Total Gate Charge (nC)

G

Fig. 7 - Typical Gate Charge vs.

Gate to Emitter Voltage

10

VCC= 480V
VGE = 15V
TJ= 25°C

)Jm( sessoL gnihctiwS latoT

I

= 60A

8

C

6

4

2

0 10 20 30 40 50

RG, Gate Resistance (Ω)

Fig. 8 - Typical Switching Losses vs.

Gate Resistance

2

0

20 40 60 80 100

IC, Collector Current (A)

Fig. 10 - Typical Switching Losses vs.

Collector to Emitter Current

1000

V = 20V

GE

T = 125 C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

o

J

?

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 11 - Turn-Off SOA

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Document Number: 94543

4 Revision: 13-May-08

(A/μs)

)

)

GA100NA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

1000

100

(A)

F

T = 150°C

J

T = 125°C

J

T = 25°C

J

10

Instantaneous forward current - I

1

0.0 0.4 0.8 1.2 1.6 2.0

Forward Voltage Drop - V (V)

Fig. 12 - Typical Forward Voltage Drop vs.

Instantaneous Forward Current

150

120

90

FM

I = 100A

F

I = 50A

F

I = 25A

F

Vishay High Power Products

100

I = 100A

F

I = 50A

F

I = 25A

F

10

Irr- ( A)

V = 200V

R

T = 125°C

J

T = 25°C

J

1

di /dt - (A/μs

Fig. 14 - Typical Recovery Current vs. dI

4000

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

I = 100A

F

3000

I = 50A

F

I = 25A

F

f

0001001

/dt

F

trr- (nC)

60

30

V = 200V

R

T = 125°C

J

T = 25°C

J

0

di /dt -

f

Fig. 13 - Typical Reverse Recovery vs. dI

2000

Qrr- (nC)

1000

0001001

/dt

F

0

di /dt - (A/µs

f

Fig. 15 - Typical Stored Charge vs. dI

0001001

/dt

F

Document Number: 94543 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 13-May-08 5

GA100NA60UP

Vishay High Power Products

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 100A

F

I = 50A

F

I = 25A

F

1000

di (rec) M/dt- (A /µs)

100

di /dt - (A/µ s)

Fig. 16 - Typical dI

f

(rec)M

/dt vs. dIF/dt

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

V

ge

V

C

90%

10%

5%

I

C

t

d(on)

0001001

Fig. 17b - Test Waveforms for Circuit of Fig. 17a,

10%

t

r

E

Defining E

on

E = (E +E )

ts on off

, t

off

d(off)

90%

t

d(off)

t

f

E

off

, t

f

t=5μs

80 %
of V

CE

430 µF

Fig. 17a - Test Circuit for Measurement of I

I

, t

, tr, t

rr

d(on)

d(off)

Same type
device
as
D.U.T.

D.U.T.

, Eon, E

LM

, t

f

off(diode)

, trr, Qrr,

Gate voltage D.U.T.

10 % + V

G

Vce

10 %

V

CC

I

C

t

(on)

d

tr

t1

90 % I

5 % V

+ V

G

D.U.T. voltage
and current

I

pk

C

CE

Eon =

I

C

t2
V

CE IC

∫

t1

t2

Fig. 17c - Test Waveforms for Circuit of Fig. 17a,

Defining E

, t

, t

on

d(on)

r

dt

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Document Number: 94543

6 Revision: 13-May-08

GA100NA60UP

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

t

I

C

tx

10 % V

V

pk

Diode reverse
recovery energy

CC

I

rr

rr

t3

Fig. 17d - Test Waveforms for Circuit of Fig. 17a,

Defining E

, trr, Qrr, I

rec

Qrr =

∫

10 % I

rr

Diode recovery
waveforms

t4

E

=

rec

V

d IC

∫

t3

t4

rr

Vishay High Power Products

t

rr

IC dt
tx

V

CC

dt

V

Gate signal

G

device under test

Current D.U.T.

Voltage in D.U.T.

Current in D1

t0

t1

t2

Fig. 17e - Macro Waveforms for Figure 17a's Test Circuit

L

50 V

1000 V

6000 µF
100 V

V

Fig. 18 - Clamped Inductive Load Test Circuit

RL=

0 - 480 V

Fig. 19 - Pulsed Collector Current Test Circuit

4 x I

480 V

at 25 °C

C

D.U. T.

*

C

Document Number: 94543 For technical questions, contact: [e-mail]

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Revision: 13-May-08 7

GA100NA60UP

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

G A 100 N A 60 U P

1 - Device:

2 - Silicon technology:

3 - Current rating (100 = 100 A)
4 - N = High side chopper
5 - SOT-227
6 - Voltage rating (60 = 600 V)
7 - U = Ultrafast with matching diode

8 - None = Standard production

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

51324678

G = IGBT

A = Generation 4 IGBT, Generation 2 HEXFRED

P = Lead (Pb)-free

®

CIRCUIT CONFIGURATION

3

2

1

4

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

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8 Revision: 13-May-08

Document Number: 94543

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1