C&H Technology GA100NA60UP User Manual

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SOT-227

PRODUCT SUMMARY

V

CES

I

DC 100 A

C

V

at 50 A, 25 °C 1.49 V

CE(on)

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

FEATURES

• Ultrafast: Optimized for minimum saturation
voltage and operating frequencies 0 to 40 kHz in
hard switching, > 200 kHz in resonant mode

• Very low conduction and switching losses

• Fully isolated package (2500 V AC/RMS)

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• UL pending

• Totally lead (Pb)-free

• Designed and qualified for industrial market

BENEFITS

• Designed for increased operating efficiency in power

600 V

conversion: PFC, UPS, SMPS, welding, induction heating

• Lower overall losses available at frequencies ≥ 20 kHz

• Easy to assemble and parallel

• Direct mounting to heatsink

• Lower EMI, requires less snubbing

• Plug in compatible with other SOT-227 packages

GA100NA60UP

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6 to 32 or M3 screw

CES

TC = 25 °C 100

C

T

= 100 °C 50

C

CM

LM

ISOL

, T

T

J

Repetitive rating: V
by maximum junction temperature (fig. 20)

GE

Any terminal to case, t = 1 min 2500

TC = 25 °C 250

D

T

= 100 °C 100

C

Stg

= 20 V; pulse width limited

GE

600 V

200

200

± 20

W

- 55 to + 150 °C

12

(1.3)

Ibf · in

(N · m)

A

V

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, IGBT R

Thermal resistance, junction to case, diode R

Case to sink, flat, greased surface R

Weight of module 30 - g

θJC

θJC

θCS

-0.50

-1.0

0.05 -

°C/W

Document Number: 94543 For technical questions, contact: [e-mail]
Revision: 13-May-08 1

www.vishay.com

GA100NA60UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast Speed IGBT), 50 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coeffecient of
breakdown voltage

ΔV

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 µA

= 0 V, IC = 1.0 mA

V

/ΔT

GE

J

VGE = 15 V, IC = 50 A

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

ΔV

GE(th)

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

/ ΔTJVCE = VGE, IC = 250 µA - - 7.6 - mV/°C

fe

CES

FM

GES

= 15 V, IC = 100 A - 1.80 -

GE

= 15 V, IC = 50 A, TJ = 150 °C - 1.47 -

V

GE

See fig. 1, 4

VCE = VGE, IC = 250 µA 3.0 - 6.0

VCE = 100 V, IC = 50 A 34 52 - S

VGE = 0 V, VCE = 600 V - - 250 µA

= 0 V, VCE = 600 V, TJ = 150 °C - - 1.3 mA

V

GE

IC = 50 A

= 50 A, TJ = 150 °C - 1.16 1.3

I

C

See fig. 12

VGE = ± 20 V - - ± 100 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall recovery
during t

b

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 13-May-08

dI

d(on)

d(off

t

d(on)

E

d(off)

ies

oes

res

rr

rr

(rec)M

g

ge

gc

r

f

on

off

ts

tot

r

f

ts

E

rr

IC = 50 A
V

CC

V

GE

= 400 V
= 15 V

See fig. 7

TJ = 25 °C

)-240-

I

= 60 A, VCC = 480 V

C

V

= 15 V, RG = 5.0 Ω

GE

energy losses include “tail” and
diode reverse recovery

TJ = 150 °C
I

= 60 A, VCC = 480 V

C

= 15 V, RG = 5.0 Ω

V

GE

energy losses include “tail” and
diode reverse recovery

VGE = 0 V
V

= 30 V

CC

See fig. 6

ƒ = 1.0 MHz

/dt

TJ = 25 °C

T

= 125 °C - 120 180

J

TJ = 25 °C

T

= 125 °C - 11 16

J

TJ = 25 °C

T

= 125 °C - 780 1200

J

T

= 25 °C

J

= 125 °C - 220 -

T

J

See fig. 13

See fig. 14

See fig. 15

See fig. 16

I

= 50 A

F

= 200 V

V

R

dI/dt = 200 A/µs

600 - - V

-0.36 - V/°C

- 1.49 2.1

VV

-1.31.6
V

- 430 640

-4872

nCGate emitter charge (turn-on) Q

- 130 190

-57 -

-80 -

ns

-120 -

-0.41 -

-2.51 -

mJTurn-off switching loss E

-2.924.4

-57 -

-80 -

ns

-380 -

-170 -

-4.78 - mJ

-2.0 - nH

-7400 -

-730 -

pFOutput capacitance C

-90 -

- 90 140

-7.311

- 360 550

-370 -

ns

A

nC

A/µs

Document Number: 94543