C&H Technology EMF050J60U User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Application

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EMIPAK2

3-Levels Half-Bridge Inverter Stage, 60 A/57 A

PRODUCT SUMMARY

1° LEVEL OF HALF-BRIDGE

V

CES

typical at IC = 50 A 1.8 V

V

CE(ON)

I

at TC = 98 °C 50 A

C

2° LEVEL OF HALF-BRIDGE

V

CES

typical at IC = 50 A 2.73 V

V

CE(ON)

I

at TC = 93 °C 50 A

C

600 V

900 V

VS-EMF050J60U

Vishay Semiconductors

FEATURES

• Warp1 and Warp2 PFC IGBT

®

•FRED Pt

•FRED Pt

• Integrated thermistor

•Square RBSOA

• Operating frequency 60 kHz to 150 kHz

• Low internal inductances

• Low switching loss

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.

and HEXFRED® antiparallel diodes

®

clamping diodes

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Operating junction temperature T

Storage temperature range T

RMS isolation voltage V

Q1 - Q4 IGBT

Collector to emitter voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

LM

Continuous collector current I

Power dissipation P

Q2 - Q3 IGBT

Collector to emitter voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

LM

Continuous collector current I

Power dissipation P

J

Stg

ISOL

CES

GES

CM

(1)

TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V

20

TC = 25 °C 88

C

T

= 80 °C 60

C

TC = 25 °C 338

D

CES

GES

CM

(2)

T

= 80 °C 189

C

TC = 25 °C 85

C

T

= 80 °C 57

C

TC = 25 °C 338

D

T

= 80 °C 189

C

150

- 40 to 125

600

150

150

900

20

150

150

°C

V

A

A

W

V

A

A

W

Revision: 09-Dec-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-EMF050J60U

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

D1 - D2 CLAMPING DIODE

Repetitive peak reverse voltage V

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

D3 - D4 AP DIODE

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

D5 - D6 AP DIODE

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

Notes

• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.

(1)

V

(2)

CC

V

CC

= 400 V, V
= 720 V, V

= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C

GE

= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C

GE

RRM

FSM

F

FSM

F

FSM

F

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 270

TC = 25 °C 68

T

= 80 °C 46

C

TC = 25 °C 150

D

T

= 80 °C 84

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 280

TC = 25 °C 53

= 80 °C 36

T

C

TC = 25 °C 176

D

T

= 80 °C 99

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 220 A

TC = 25 °C 46

T

= 80 °C 31

C

TC = 25 °C 96

D

T

= 80 °C 54

C

Vishay Semiconductors

600 V

A

W

A

W

A

W

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT

Collector to emitter breakdown voltage BV

Temperature coefficient of breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

BV

V

CES

CE(ON)

GE(th)

GE(th)

CES

GES

CES

/T

/T

fe

GE

Revision: 09-Dec-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGE = 0 V, IC = 500 μA 600 - - V

VGE = 0 V, IC = 500 μA (25 °C to 125 °C) - 0.1 - V/°C

J

VGE = 15 V, IC = 27 A - 1.44 1.75

= 15 V, IC = 50 A - 1.8 2.1

V

GE

= 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05

V

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.2 2.5

V

GE

VCE = VGE, IC = 250 μA 2.9 3.9 5.3

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

J

VCE = 20 V, IC = 50 A - 95 - s

VCE = 20 V, IC = 50 A - 5.9 - V

VGE = 0 V, VCE = 600 V - 0.003 0.1

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3

GE

VGE = ± 20 V, VCE = 0 V - - ± 200 nA

2

Document Number: 93494

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V

mA

VS-EMF050J60U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q2 - Q3 IGBT

Collector to emitter breakdown voltage BV

Temperature coefficient of breakdown
voltage

BV

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

D1 - D2 CLAMPING DIODE

Cathode to anode blocking voltage V

Forward voltage drop V

Reverse leakage current I

D3 - D4 AP DIODE

Forward voltage drop V

D5 - D6 AP DIODE

Forward voltage drop V

CES

CES

CE(ON)

GE(th)

fe

GE

CES

GES

BR

FM

RM

FM

FM

/T

/T

VGE = 0 V, IC = 500 μA 900 - - V

VGE = 0 V, IC = 500 μA (25 °C to 125 °C) - - 8.5 - V/°C

J

VGE = 15 V, IC = 27 A - 2.45 2.8

= 15 V, IC = 50 A - 2.73 3.2

V

GE

= 15 V, IC = 27 A, TJ = 125 °C - 2 2.35

V

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.43 2.9

V

GE

VCE = VGE, IC = 250 μA 2.8 4.5 6.3

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 11.7 - mV/°C

J

VCE = 20 V, IC = 50 A - 68 - s

VCE = 20 V, IC = 50 A - 6.9 - V

VGE = 0 V, VCE = 900 V - 0.006 0.38

V

= 0 V, VCE = 900 V, TJ = 125 °C - 1.4 3

GE

VGE = ± 20 V, V

= 0 V - - ± 200 nA

CE

IR = 100 μA 600 - -

IF = 30 A - 1.84 2.12

= 30 A, TJ = 125 °C - 1.37 1.65

I

F

VR = 600 V - 0.002 0.1

V

= 600 V, TJ = 125 °C - 0.9 6

R

IF = 50 A - 2.7 3.2

I

= 50 A TJ = 125 °C - 2.8 3.3

F

IF = 30 A - 1.93 2.37

I

= 30 A TJ = 125 °C - 1.48 1.9

F

Vishay Semiconductors

V

mA

V

mA

V

V

Revision: 09-Dec-11

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VS-EMF050J60U

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE)

Total gate charge (turn-on) Q

Gate to ermitter charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE)

Total gate charge (turn-on) Q

Gate to emitter charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

ge

gc

ON

OFF

TOT

d(on)

d(off)

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

ge

gc

ON

OFF

TOT

d(on)

d(off)

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

g

IC= 70 A

= 400 V

V

CC

= 15 V

V

GE

IC = 50 A
V

= 400 V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH

(1)

IC = 50 A

= 400 V

V

CC

V

= 15 V

GE

R

= 4.7 

r

f

g

L = 500 μH

= 125 °C

T

J

(1)

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

T

= 150 °C, IC = 150 A

J

V

= 400 V, VP = 600 V

CC

R

= 22 , V

g

g

IC= 50 A

= 400 V

V

CC

= 15 V

V

GE

= 15 V to 0 V

GE

IC = 50 A

= 720 V

V

CC

= 15 V

V

GE

R

= 4.7 

r

f

g

L = 500 μH

(1)

IC = 50 A

= 720 V

V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH
T

= 125 °C

J

(1)

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

T

= 150 °C, IC = 150 A

J

V

= 720 V, VP = 900 V

CC

R

= 22 , V

g

= 15 V to 0 V

GE

Vishay Semiconductors

- 480 720

- 82 164

- 160 260

-0.11-

-0.76-

-0.87-

- 182 -

-46-

- 207 -

-92-

-0.25-

-0.88-

-1.13-

- 183 -

-47-

- 211 -

- 101 -

- 9500

- 780

- 116

Fullsquare

- 320 480

-3858

- 106 160

-0.56-

-0.68-

-1.24-

- 152 -

-48-

- 165 -

- 100 -

-0.95-

-2.18-

-3.13-

- 154 -

-52-

- 168 -

- 360 -

- 6600 -

- 400 -

-90-

Fullsquare

nC

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

nC

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

Revision: 09-Dec-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-EMF050J60U

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

D1 - D2 CLAMPING DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

D3 - D4 AP DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

D5 - D6 AP DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Note

(1)

Energy losses include “tail” and diode reverse recovery.

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

VR = 200 V
I

= 30 A

F

dl/dt = 500 A/μs

VR = 200 V
I

= 30 A

F

dl/dt = 500 A/μs, T

VR = 400 V
I

= 50 A

F

dl/dt = 500 A/μs

VR = 400 V
I

= 50 A

F

dl/dt = 500 A/μs, T

VR = 200 V

= 30 A

I

F

dl/dt = 500 A/μs

VR = 200 V

= 30 A

I

F

dl/dt = 500 A/μs, T

= 125 °C

J

= 125 °C

J

= 125 °C

J

Vishay Semiconductors

-5080ns

-7.511 A

- 185 440 nC

- 107 147 ns

-1822A

- 955 1620 nC

- 114 150 ns

-2125A

- 1200 1875 nC

- 170 210 ns

-2832A

- 2160 3360 nC

-4677ns

-711A

- 161 423 nC

- 106 138 ns

-1722A

- 900 1518 nC

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

R

Resistance

25

R

100

B value B T

TJ = 100 °C 468 493 518

= 25 °C/TJ = 50 °C 3206 3375 3544 K

J

4500 5000 5500



THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)

Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) - - 0.37

D1 - D2 Clamping diode - Junction to case thermal resistance (per diode) - - 0.83

R

thJC

D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.71

D5 - D6 AP diode - Junction to case thermal resistance (per diode) - - 1.3

Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)

Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) - 0.31 -

D1 - D2 Clamping diode - Case to sink thermal resistance (per diode) - 0.51 -

R

thCS

(1)

D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.41 -

D5 - D6 AP diode - Case to sink thermal resistance (per diode) - 0.62 -

Mounting torque (M4) -23Nm

Weight -39- g

Note

(1)

Mounting surface flat, smooth, and greased

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- - 0.37

-0.31-

Document Number: 93494

°C/W

www.vishay.com

V

CE

(V)

TJ (°C)

10 16060 110

0.5

1.0

1.5

2.0

2.5

3.0

3.5

93494_04

4.0

100 A

50 A

27 A

VGE = 15 V

I

CE

(A)

VGE (V)

387456

0

93494_05

100

30

40

10

50

60

20

80

90

70

TJ = 25 °C

VCE = 20 V

TJ = 125 °C

100

VGE = 15 V

90

80

70

60

50

(A)

C

I

40

30

20

10

0

0 1.5 3.01.0 2.50.5 2.0 3.5

93494_01

Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics

100

TJ = 125 °C

90

80

70

60

50

(A)

C

I

40

30

20

10

0

0 1.5 2.5 3.0 3.50.5 1.0 2.0 4.0

93494_02

Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics

TJ = 125 °C

TJ = 25 °C

VCE (V)

VCE (V)

TJ = 150 °C

VGE = 8 V

= 10 V

V

GE

= 12 V

V

GE

= 15 V

V

GE

= 18 V

V

GE

VS-EMF050J60U

Vishay Semiconductors

Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.

Junction Temperature

Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93494_03

IC - Continuous Collector Current (A)

Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.

Case Temperature per Junction

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4.5

4.0

DC

3.5

TJ = 25 °C

(V)

geth

V

3.0

2.5

93494_06

2.0

01.00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8

IC (mA)

80604020

100

Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage

6

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TJ = 125 °C

Document Number: 93494

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I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93494_07

1000

10

100

Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V, Rg = 22 

J

VS-EMF050J60U

Vishay Semiconductors

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93494_10

IF - Continuous Forward Current (A)

Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode

Forward Current vs. Case Temperature per Junction

DC

2515105353020 40 45

50

1

(mA)

CES

I

0.0001

93494_08

0.1

0.01

0.001

100 600200 300 400 500

125 °C

25 °C

V

CES

(V)

Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current

100

90

80

70

60

50

(A)

F

I

40

30

20

10

0

03.00.5 1.0 1.5 2.0 2.5

93494_09

Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics

TJ = 125 °C

TJ = 25 °C

VFM (V)

1.8

1.6

1.4

1.2

1.0

E

off

E

on

IC (A)

Energy (mJ)

93494_11

0.8

0.6

0.4

0.2

0

10 20 50 7030 60 8040 90

Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. I

(with Freewheeling D1 - D2 Clamping Diode)

V

= 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

CC

1000

t

d(off)

t

d(on)

Switching Time (ns)

93494_12

100

10

t

f

t

r

10 20 30 806040 50 70 90

IC (A)

Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. I

(with Freewheeling D1 - D2 Clamping Diode)

T

= 125 °C, VCC = 400 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

J

C

C

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I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93494_14

500

1

21

7

13

3

9

17

15

11

19

5

125 °C

25 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93494_15

500

0

200

100

1100

1000

400

600

800

500

700

900

300

125 °C

25 °C

160

150

140

130

120

110

100

(ns)

rr

t

90

80

70

60

50

40

100 200 300 400

93494_13

Fig. 13 - Typical D5 - D6 Antiparallel Diode Reverse

125 °C

25 °C

dIF/dt (A/μs)

Recovery Time vs. dI

V

= 200 V, IF = 30 A

R

F

/dt

500

VS-EMF050J60U

Vishay Semiconductors

Fig. 14 - Typical D5 - D6 Antiparallel Diode Reverse

Recovery Current vs. dI

V

= 200 V, IF = 30 A

R

/dt

F

1

0.1

0.01

- Thermal Impedance

Junction to Case (°C/W)

thJC

Revision: 09-Dec-11

Z

0.001

0.00001

93494_16

For technical questions within your region: [e-mail]

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Fig. 15 - Typical D5 - D6 Antiparallel Diode Reverse Recovery Charge vs. dI

V

= 200 V, IF = 30 A

R

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Fig. 16 - Maximum Thermal Impedance Z

Characteristics (Q1 - Q4 IGBT)

thJC

8

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/dt

F

10

Document Number: 93494

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Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

80604020

100

0

100

160

0

40

60

140

80

120

20

93494_20

DC

V

CE

(V)

TJ (°C)

10 16060 110

1.0

1.5

2.0

2.5

3.0

3.5

93494_21

4.0

100 A

50 A

27 A

VGE = 15 V

10

1

VS-EMF050J60U

Vishay Semiconductors

0.1

- Thermal Impedance

0.01

Junction to Case (°C/W)

thJC

Z

0.001

0.00001

93494_17

0.0001 0.001 0.01 0.1 1

Fig. 17 - Maximum Thermal Impedance Z

100

VGE = 15 V

90

80

70

(A)

C

I

93494_18

60

50

40

30

20

10

0

TJ = 125 °C

0 1.5 3.01.0 2.50.5 2.0 3.5

TJ = 150 °C

TJ = 25 °C

VCE (V)

Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

t1 - Rectangular Pulse Duration (s)

Characteristics (D5 - D6 Antiparallel Diode)

thJC

Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.

10

Case Temperature per Junction

100

TJ = 125 °C

90

80

70

60

50

(A)

C

I

40

30

20

10

93494_19

Revision: 09-Dec-11

0

0 1.5 2.5 3.0 3.50.5 1.0 2.0 4.0

Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

VGE = 9 V

= 12 V

V

GE

= 15 V

V

GE

= 18 V

V

GE

VCE (V)

Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.

Junction Temperature

9

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 93494

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I

CE

(A)

VGE (V)

498567

0

93494_22

100

30

40

10

50

60

20

80

90

70

VCE = 20 V

TJ = 25 °C

TJ = 125 °C

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93494_24

1000

10

100

I

CES

(mA)

V

CES

(V)

100 900200 300 400 500 600 700 800

0.0001

93494_25

10

1

0.1

0.01

0.001

125 °C

25 °C

VS-EMF050J60U

Vishay Semiconductors

Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics

5.5

(V)

geth

V

93494_23

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

01.00.20.1 0.3 0.5 0.7 0.90.4 0.6 0.8

TJ = 25 °C

Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage

Revision: 09-Dec-11

Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V, Rg = 22 

J

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TJ = 125 °C

IC (mA)

Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current

100

90

TJ = 25 °C

TJ = 125 °C

VFM (V)

(A)

F

I

93494_26

80

70

60

50

40

30

20

10

0

04.53.0 3.5 4.00.5 1.0 1.5 2.0 2.5

Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

93494_27

0

0

IF - Continuous Forward Current (A)

2515105353020 40 45

DC

Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode

Forward Current vs. Case Temperature per Junction

10

Document Number: 93494

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6050 55

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t

rr

(ns)

dIF/dt (A/μs)

100 200 300 400

93494_30

500

100

280

140

200

240

180

120

160

220

260

125 °C

25 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93494_31

500

4

32

16

28

8

20

24

12

125 °C

25 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93494_32

500

500

2500

1000

1500

2000

1250

1750

2250

750

125 °C

25 °C

4.2

3.8

3.4

3.0

2.6

2.2

1.8

Energy (mJ)

1.4

1.0

0.6

0.2
10 20 50 7030 60 8040 90

93494_28

Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. I

(with Freewheeling D2 - D3 AP Diode)

V

= 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

CC

1000

E

off

IC (A)

VS-EMF050J60U

Vishay Semiconductors

E

on

C

Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse

Recovery Time vs. dI

V

= 400 V, IF = 50 A

R

/dt

F

t

Switching Time (ns)

93494_29

f

t

100

10

10 20 30 806040 50 70 90

d(on)

t

d(off)

t

r

IC (A)

Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. I

(with Freewheeling D2 - D3 AP Diode)

T

= 125 °C, VCC = 720 V, Rg = 4.7 , VGE = 15 V, L = 500 μH

J

C

Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse

Recovery Current vs. dI

V

= 400 V, IF = 50 A

R

/dt

F

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dI

V

= 400 V, IF = 50 A

R

/dt

F

11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 93494

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1

0.1

0.01

- Thermal Impedance

Junction to Case (°C/W)

thJC

Z

0.001

0.00001

93494_33

10

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Fig. 33 - Maximum Thermal Impedance Z

Characteristics (Q2 - Q3 IGBT)

thJC

VS-EMF050J60U

Vishay Semiconductors

10

(A)

F

I

93494_35

0.1

- Thermal Impedance

0.01

Junction to Case (°C/W)

thJC

Z

0.001

0.00001

93494_34

0.0001 0.001 0.01 0.1 1

Fig. 34 - Maximum Thermal Impedance Z

100

90

80

70

60

50

40

30

20

10

0

01.51.0 2.50.5 2.0 3.0

TJ = 125 °C

TJ = 25 °C

VFM (V)

t1 - Rectangular Pulse Duration (s)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

Characteristics (D3 - D4 Antiparallel Diode)

thJC

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0

93494_36

IF - Continuous Forward Current (A)

DC

10

5030 60402010

70

Fig. 35 - Typical D1 - D2 Clamping Diode Forward Characteristics Fig. 36 - Maximum DC D1 - D2 Clamping Diode

Forward Current vs. Case Temperature per Junction

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

12

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Document Number: 93494

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

I

R

(mA)

VR (V)

100 200 300 400 500 600

0.0001

0.001

0.01

0.1

1

10

93494_37

125 °C

25 °C

I

rr

(A)

dIF/dt (A/μs)

100 200 300 400

93494_39

500

1

21

7

13

3

9

17

15

11

19

5

125 °C

25 °C

Q

rr

(nC)

dIF/dt (A/μs)

100 200 300 400

93494_40

500

0

1000

200

400

600

300

500

700

900

800

100

125 °C

25 °C

VS-EMF050J60U

Vishay Semiconductors

Fig. 37 - Typical D1 - D2 Clamping Diode

Reverse Leakage Current

160

140

125 °C

120

100

(ns)

rr

t

80

25 °C

60

40

100 200 300 400

93494_38

dIF/dt (A/μs)

Fig. 38 - Typical D1 - D2 Clamping Diode Reverse

Recovery Time vs. dI

V

= 200 V, IF = 30 A

R

10

1

Fig. 39 - Typical D1 - D2 Clamping Diode Reverse

/dt

F

500

Recovery Current vs. dI

V

= 200 V, IF = 30 A

R

Fig. 40 - Typical D1 - D2 Clamping Diode Reverse

/dt

F

Recovery Charge vs. dI

V

= 200 V, IF = 30 A

R

/dt

F

0.1

- Thermal Impedance

0.01

Junction to Case (°C/W)

Revision: 09-Dec-11

thJC

Z

0.001

0.00001

93494_41

Fig. 41 - Maximum Thermal Impedance Z

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Characteristics (D1 - D2 Clamping Diode)

thJC

13

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10

Document Number: 93494

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1 - Vishay Semiconductors product

2 - Package indicator (EM = EMIPAK2)

3 - Circuit configuration (F = 3-levels half-bridge inverter stage)

4 - Current rating (050 = 50 A)

5 - Die technology (J = Warp2 IGBT)

6 - Voltage rating (60 = 600 V)

7 - U = Ultrafast

Device code

51 32 4 6 7

VS- EM F 050 J 60 U

ORDERING INFORMATION TABLE

TYPICAL CONNECTION

VS-EMF050J60U

Vishay Semiconductors

Note

• Please refer to lead assignment for correct pin configuration. This diagram shows electrical connections only.

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

14

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Document Number: 93494

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+ 400 V

17

35

MID

14

15

VMID

29

30

36

Q1

Q2

Q3

Q4

Th

D5

D3

D4

D6

D2

D1

- 400 V

26

27

Inv_Drv1

33

1

5

9

6

11

Inv_Drv2

8

4

Inv_Drv3

3

2

Inv_Drv3

23

24

33

11

5612

14 15

35

17

26

27

2324

3036

9

4

8

3

29

CIRCUIT CONFIGURATION

VS-EMF050J60U

Vishay Semiconductors

PACKAGE

Dimensions www.vishay.com/doc?95436

Revision: 09-Dec-11

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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LINKS TO RELATED DOCUMENTS

15

Document Number: 93494

, [e-mail], [e-mail]

DIMENSIONS in millimeters

5.1

12.7

8.9

10.2

7.6

7.6

11.4

55 ± 0.3

15.2 14

58 ± 0.3

40.6

1.3

2.6

1.3

5.1

3.8

3.8

10.1

16.5

62 ± 0.3

53

23.8

23

41.5

Ø 5

Ø 2

Ø 4.3

Ø 1 ± 0.1

20.5 ± 1

17 ± 1

12

M4

Ø 0.4

6.4

16.8

145°

62 ± 0.3

39 ± 0.3

3 ref.

0.1

20.5 ± 1

24.1

20.3

16.5

12.7

8.9

2.5

6.3

11.4

20.3

24.1

13.3

12.1

9.59.5

5.7

7

3.2

1.9

7

10.8

15.9

1.9

5.7

8.3

12.1

15.9

Pins position
with tolerance

Front view

FF

Top view

Flat metal plate or
with optional M4 thread

Detail “A” Scale 10:1

Ceramic gap

Detail “A”

Side view

Outline Dimensions

Vishay Semiconductors

EMIPAK2

Document Number: 95436 For technical questions, contact: [e-mail]
Revision: 27-Jan-11 1

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000