C&H Technology EMF050J60U User Manual

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Suite 108
Minnetonka, MN 55345

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EMIPAK2

3-Levels Half-Bridge Inverter Stage, 60 A/57 A

PRODUCT SUMMARY

1° LEVEL OF HALF-BRIDGE

V

CES

typical at IC = 50 A 1.8 V

V

CE(ON)

I

at TC = 98 °C 50 A

C

2° LEVEL OF HALF-BRIDGE

V

CES

typical at IC = 50 A 2.73 V

V

CE(ON)

I

at TC = 93 °C 50 A

C

600 V

900 V

VS-EMF050J60U

Vishay Semiconductors

FEATURES

• Warp1 and Warp2 PFC IGBT

®

•FRED Pt

•FRED Pt

• Integrated thermistor

•Square RBSOA

• Operating frequency 60 kHz to 150 kHz

• Low internal inductances

• Low switching loss

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

VS-EMF050J60U is an integrated solution for a multi level
inverter half-bridge in a single package. The EMIPAK2
package is easy to use thanks to the solderable terminals
and provides improved thermal performance thanks to the
exposed substrate. The optimized layout also helps to
minimize stray parameters, allowing for better EMI
performance.

and HEXFRED® antiparallel diodes

®

clamping diodes

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Operating junction temperature T

Storage temperature range T

RMS isolation voltage V

Q1 - Q4 IGBT

Collector to emitter voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

LM

Continuous collector current I

Power dissipation P

Q2 - Q3 IGBT

Collector to emitter voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

LM

Continuous collector current I

Power dissipation P

J

Stg

ISOL

CES

GES

CM

(1)

TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V

20

TC = 25 °C 88

C

T

= 80 °C 60

C

TC = 25 °C 338

D

CES

GES

CM

(2)

T

= 80 °C 189

C

TC = 25 °C 85

C

T

= 80 °C 57

C

TC = 25 °C 338

D

T

= 80 °C 189

C

150

- 40 to 125

600

150

150

900

20

150

150

°C

V

A

A

W

V

A

A

W

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

1

, [e-mail], [e-mail]

Document Number: 93494

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-EMF050J60U

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

D1 - D2 CLAMPING DIODE

Repetitive peak reverse voltage V

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

D3 - D4 AP DIODE

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

D5 - D6 AP DIODE

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

Notes

• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.

(1)

V

(2)

CC

V

CC

= 400 V, V
= 720 V, V

= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C

GE

= 15 V, L = 500 μH, Rg = 22 , TJ = 150 °C

GE

RRM

FSM

F

FSM

F

FSM

F

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 270

TC = 25 °C 68

T

= 80 °C 46

C

TC = 25 °C 150

D

T

= 80 °C 84

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 280

TC = 25 °C 53

= 80 °C 36

T

C

TC = 25 °C 176

D

T

= 80 °C 99

C

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 220 A

TC = 25 °C 46

T

= 80 °C 31

C

TC = 25 °C 96

D

T

= 80 °C 54

C

Vishay Semiconductors

600 V

A

W

A

W

A

W

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT

Collector to emitter breakdown voltage BV

Temperature coefficient of breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

BV

V

CES

CE(ON)

GE(th)

GE(th)

CES

GES

CES

/T

/T

fe

GE

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VGE = 0 V, IC = 500 μA 600 - - V

VGE = 0 V, IC = 500 μA (25 °C to 125 °C) - 0.1 - V/°C

J

VGE = 15 V, IC = 27 A - 1.44 1.75

= 15 V, IC = 50 A - 1.8 2.1

V

GE

= 15 V, IC = 27 A, TJ = 125 °C - 1.7 2.05

V

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.2 2.5

V

GE

VCE = VGE, IC = 250 μA 2.9 3.9 5.3

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

J

VCE = 20 V, IC = 50 A - 95 - s

VCE = 20 V, IC = 50 A - 5.9 - V

VGE = 0 V, VCE = 600 V - 0.003 0.1

V

= 0 V, VCE = 600 V, TJ = 125 °C - 0.170 3

GE

VGE = ± 20 V, VCE = 0 V - - ± 200 nA

2

Document Number: 93494

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V

mA

VS-EMF050J60U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q2 - Q3 IGBT

Collector to emitter breakdown voltage BV

Temperature coefficient of breakdown
voltage

BV

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

D1 - D2 CLAMPING DIODE

Cathode to anode blocking voltage V

Forward voltage drop V

Reverse leakage current I

D3 - D4 AP DIODE

Forward voltage drop V

D5 - D6 AP DIODE

Forward voltage drop V

CES

CES

CE(ON)

GE(th)

fe

GE

CES

GES

BR

FM

RM

FM

FM

/T

/T

VGE = 0 V, IC = 500 μA 900 - - V

VGE = 0 V, IC = 500 μA (25 °C to 125 °C) - - 8.5 - V/°C

J

VGE = 15 V, IC = 27 A - 2.45 2.8

= 15 V, IC = 50 A - 2.73 3.2

V

GE

= 15 V, IC = 27 A, TJ = 125 °C - 2 2.35

V

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.43 2.9

V

GE

VCE = VGE, IC = 250 μA 2.8 4.5 6.3

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 11.7 - mV/°C

J

VCE = 20 V, IC = 50 A - 68 - s

VCE = 20 V, IC = 50 A - 6.9 - V

VGE = 0 V, VCE = 900 V - 0.006 0.38

V

= 0 V, VCE = 900 V, TJ = 125 °C - 1.4 3

GE

VGE = ± 20 V, V

= 0 V - - ± 200 nA

CE

IR = 100 μA 600 - -

IF = 30 A - 1.84 2.12

= 30 A, TJ = 125 °C - 1.37 1.65

I

F

VR = 600 V - 0.002 0.1

V

= 600 V, TJ = 125 °C - 0.9 6

R

IF = 50 A - 2.7 3.2

I

= 50 A TJ = 125 °C - 2.8 3.3

F

IF = 30 A - 1.93 2.37

I

= 30 A TJ = 125 °C - 1.48 1.9

F

Vishay Semiconductors

V

mA

V

mA

V

V

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

3

, [e-mail], [e-mail]

Document Number: 93494

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-EMF050J60U

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE)

Total gate charge (turn-on) Q

Gate to ermitter charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE)

Total gate charge (turn-on) Q

Gate to emitter charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

ge

gc

ON

OFF

TOT

d(on)

d(off)

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

ge

gc

ON

OFF

TOT

d(on)

d(off)

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

g

IC= 70 A

= 400 V

V

CC

= 15 V

V

GE

IC = 50 A
V

= 400 V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH

(1)

IC = 50 A

= 400 V

V

CC

V

= 15 V

GE

R

= 4.7 

r

f

g

L = 500 μH

= 125 °C

T

J

(1)

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

T

= 150 °C, IC = 150 A

J

V

= 400 V, VP = 600 V

CC

R

= 22 , V

g

g

IC= 50 A

= 400 V

V

CC

= 15 V

V

GE

= 15 V to 0 V

GE

IC = 50 A

= 720 V

V

CC

= 15 V

V

GE

R

= 4.7 

r

f

g

L = 500 μH

(1)

IC = 50 A

= 720 V

V

CC

V

= 15 V

GE

= 4.7 

R

r

f

g

L = 500 μH
T

= 125 °C

J

(1)

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

T

= 150 °C, IC = 150 A

J

V

= 720 V, VP = 900 V

CC

R

= 22 , V

g

= 15 V to 0 V

GE

Vishay Semiconductors

- 480 720

- 82 164

- 160 260

-0.11-

-0.76-

-0.87-

- 182 -

-46-

- 207 -

-92-

-0.25-

-0.88-

-1.13-

- 183 -

-47-

- 211 -

- 101 -

- 9500

- 780

- 116

Fullsquare

- 320 480

-3858

- 106 160

-0.56-

-0.68-

-1.24-

- 152 -

-48-

- 165 -

- 100 -

-0.95-

-2.18-

-3.13-

- 154 -

-52-

- 168 -

- 360 -

- 6600 -

- 400 -

-90-

Fullsquare

nC

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

nC

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

4

, [e-mail], [e-mail]

Document Number: 93494

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-EMF050J60U

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

D1 - D2 CLAMPING DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

D3 - D4 AP DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

D5 - D6 AP DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Note

(1)

Energy losses include “tail” and diode reverse recovery.

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

rr

VR = 200 V
I

= 30 A

F

dl/dt = 500 A/μs

VR = 200 V
I

= 30 A

F

dl/dt = 500 A/μs, T

VR = 400 V
I

= 50 A

F

dl/dt = 500 A/μs

VR = 400 V
I

= 50 A

F

dl/dt = 500 A/μs, T

VR = 200 V

= 30 A

I

F

dl/dt = 500 A/μs

VR = 200 V

= 30 A

I

F

dl/dt = 500 A/μs, T

= 125 °C

J

= 125 °C

J

= 125 °C

J

Vishay Semiconductors

-5080ns

-7.511 A

- 185 440 nC

- 107 147 ns

-1822A

- 955 1620 nC

- 114 150 ns

-2125A

- 1200 1875 nC

- 170 210 ns

-2832A

- 2160 3360 nC

-4677ns

-711A

- 161 423 nC

- 106 138 ns

-1722A

- 900 1518 nC

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

R

Resistance

25

R

100

B value B T

TJ = 100 °C 468 493 518

= 25 °C/TJ = 50 °C 3206 3375 3544 K

J

4500 5000 5500



THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Q1 - Q4 IGBT - Junction to case thermal resistance (per switch)

Q2 - Q3 IGBT - Junction to case thermal resistance (per switch) - - 0.37

D1 - D2 Clamping diode - Junction to case thermal resistance (per diode) - - 0.83

R

thJC

D3 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.71

D5 - D6 AP diode - Junction to case thermal resistance (per diode) - - 1.3

Q1 - Q4 IGBT - Case to sink thermal resistance (per switch)

Q2 - Q3 IGBT - Case to sink thermal resistance (per switch) - 0.31 -

D1 - D2 Clamping diode - Case to sink thermal resistance (per diode) - 0.51 -

R

thCS

(1)

D3 - D4 AP diode - Case to sink thermal resistance (per diode) - 0.41 -

D5 - D6 AP diode - Case to sink thermal resistance (per diode) - 0.62 -

Mounting torque (M4) -23Nm

Weight -39- g

Note

(1)

Mounting surface flat, smooth, and greased

Revision: 09-Dec-11

For technical questions within your region: [e-mail]

5

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- - 0.37

-0.31-

Document Number: 93494

°C/W