C&H Technology CPV364M4FPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

IGBT SIP Module

(Fast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

CPV364M4FPbF

Vishay High Power Products

• Switching-loss rating includes all “tail” losses

• HEXFRED® soft ultrafast diodes

• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve

IMS-2

• Totally lead (Pb)-free

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

per phase (4.6 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 Vdc

Power factor 0.8

Modulation depth (see fig. 1) 115 %

(typical)

V

CE(on)

= 15 A, 25 °C

at I

C

18 A

125 °C

1.35 V

RMS

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to Vishay‘s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and storage
temperature range

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

Notes

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)

(2)

VCC = 80 % (V

), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19)

CES

CES

TC = 25 °C 27

C

(1)

CM

(2)

LM

F

FM

GE

ISOL

D

, T

T

J

Stg

= 100 °C 15

T

C

TC = 100 °C 9.3

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 63

T

= 100 °C 25

C

600 V

80

80

80

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

RoHS

COMPLIANT

A

RMS

W

°C

Document Number: 94487 For technical questions, contact: [e-mail]
Revision: 01-Sep-08 1

www.vishay.com

CPV364M4FPbF

Vishay High Power Products

IGBT SIP Module

(Fast IGBT)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coefficient of
breakdown voltage

ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs; single shot

(BR)CES

(BR)CES

ΔV

CE(on)

GE(th)

GE(th)

fe

CES

FM

GES

(2)

VGE = 0 V, IC = 250 µA 600 - - V

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.69 - V/°C

IC = 15 A

I

C

I

C

VCE = VGE, IC = 250 µA

/ΔT

J

VCE = 100 V, IC = 27 A 9.2 12 - S

VGE = 0 V, VCE = 600 V - - 250

V

GE

IC = 15 A

I

C

VGE = ± 20 V - - ± 100 nA

(IGBT) - 2.0

thJC

(DIODE) - 3.0

thJC

(MODULE) 0.10 -

thCS

20 - g

0.7 - oz.

-1.351.5

= 15 V

V

= 27 A - 1.60 -

GE

See fig. 2, 5

= 15 A, TJ = 150 °C - 1.35 -

3.0 - 6.0

-- 12-mV/°C

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

= 15 A, TJ = 150 °C - 1.2 1.6

See fig. 13

-1.31.7

°C/WJunction to case, each DIODE, one DIODE in conduction R

V

µA

V

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94487

2 Revision: 01-Sep-08

CPV364M4FPbF

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery charge I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

(rec)M

g

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

ies

oes

res

rr

rr

rr

IC = 15 A

= 400 V

V

CC

V

= 15 V

GE

See fig. 8

TJ = 25 °C
I

= 15 A, VCC = 480 V

C

= 15 V, RG = 10 Ω

V

GE

Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18

TJ = 150 °C

= 15 A, VCC = 480 V

I

C

V

= 15 V, RG = 10 Ω

GE

Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz
See fig. 7

/dt

TJ = 25 °C

T

= 125 °C - 74 120

J

TJ = 25 °C

T

= 125 °C - 6.5 10

J

TJ = 25 °C

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 160 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 15 A

F

V

= 200 V

R

dI/dt = 200 A/µs

- 100 160

-1523

nCGate to emitter charge (turn-on) Q

-3756

-42-

-18-

- 220 330

ns

- 160 240

-0.46-

-0.86-

mJTurn-off switching loss E

- 1.32 1.8

-39-

-19-

-410-

ns

-290-

-2.5-mJ

-2200-

-140-

pFOutput capacitance C

-29-

-4260

-4.06.0

- 80 180

-188-

ns

A

nC

A/µs

Document Number: 94487 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 3

CPV364M4FPbF

Vishay High Power Products

25

20

15

10

LOAD CURRENT (A)

5

0

0.1 1 10 100

100

T = 25°C

J

IGBT SIP Module

(Fast IGBT)

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rat ed Voltage

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

30

25

7.34

5.87

4.40

2.94

Total Output Power (kW)

1.47

0.00

T = 150°C

J

10

C

I , Collector-to-Emitter Current (A)

1

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

T = 150°C

J

10

T = 25°C

J

C

I , Collector-to-Emitter Current (A)

1

5678910

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

20

15

10

5

Maximum DC Collector Current(A)

011

0

25 50 75 100 125 150

T , Case Temperat ur e ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case Temperature

3.0

V = 15V

GE

80 us PULSE WIDTH

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A30

C

I = A15

C

I = A7.5

C

°

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94487

4 Revision: 01-Sep-08

CPV364M4FPbF

4000

3000

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

10

thJC

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rect angular Pulse Duration (sec)

1

J

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0V f = 1 MHz

Cies = Cge + Cgc + Cce SHORTED

Cres = Cce

Coes = Cce + Cgc

C

ies

1.45

1.40

V = 480V

CC

V = 15V

GE

T = 25 C

J

I = 15A

C

P

DM

t

1

t

2

12

DM

thJC

C

°

2000

C

CE

oes

C

res

001011

1000

0

V , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

20

V = 400V

CC

I = 15A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

1.35

Total Switching Losses (mJ)

1.30
0 10 20 30 40 50

R , Gate Resistance ( )

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

R = 10
V = 15V
V = 480V

1

G
GE
CC

Ω

I = A

30

C

I = A

15

C

I = A

7.5

C

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs. Junction Temperature

Document Number: 94487 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 5

CPV364M4FPbF

Vishay High Power Products

6.0

5.0

4.0

3.0

2.0

Total Switching Losses (mJ)

1.0

0.0
0 5 10 15 20 25 30

Ω

R = 10

G

T = 150 C
V = 480V
V = 15V

°

J
CC
GE

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

IGBT SIP Module

(Fast IGBT)

100

1000

V = 20V

GE

T = 125 C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

o

J

SAFE OPERATING AREA

V , C ollect or-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94487

6 Revision: 01-Sep-08

CPV364M4FPbF

IGBT SIP Module

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 30A

F

60

rr

t - (ns)

40

20

di /dt - (A/µs)

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

I = 15A

F

I = 5.0A

F

f

(Fast IGBT)

0001001

Vishay High Power Products

800

V = 200V

R

T = 125°C

J

T = 25°C

J

600

I = 30A

F

400

RR

Q - (nC)

I = 15A

F

I = 5.0A

F

200

0

di /dt - (A/µs)

f

Fig. 16 - Typical Stored Charge vs. dI

0001001

/dt

F

100

V = 200V

R

T = 125°C

J

T = 25 °C

J

I = 30A

F

I = 15A

F

10

IRRM

I - (A)

I = 5.0A

F

1

di /dt - (A/µs)

f

Fig. 15 - Typical Recovery Current vs. dI

1000

V = 200V

R

T = 12 5°C

J

T = 25 °C

J

I = 5.0A

F

I = 15A

F

I = 30A

F

di(rec)M/dt - (A/µs)

0001001

/dt

F

100

Fig. 17 - Typical dI

di /dt - (A/µs)

f

/dt vs dIF/dt

(rec)M

0001001

Document Number: 94487 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 7

CPV364M4FPbF

Vishay High Power Products

Same type

device as

D.U.T.

80 %

of V

CE

Fig. 18 - Test Circuit for Measurement of ILM, Eon, E

+Vge

I

rr

430 µF

, t

d(on)

, tr, t

90% Vge

d(off)

, t

D.U.T.

f

IGBT SIP Module

(Fast IGBT)

, trr, Qrr,

off(diode)

GATE VOLTAG E D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vce

+Vg

DUT VOLTAGE
AND CURRENT

Ipk

Ic

t2

Vce ie dt

Eon =

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

Ic

, t

, t

on

d(on)

r

trr

Qrr =

trr

id dt

∫

tx

Vce

Ic

td(off)

10% Vce

t1

90% Ic

Ic

tf

5% Ic

t1+5µS

Vce ic dt

Eoff =

∫

t1

t2

Fig. 19 - Test Waveforms for Circuit for Fig. 18a,

Defining E

, t

, t

off

d(off)

f

Fig. 19 - Test Waveforms for Circuit of Fig. 18a,

Vg

GATE SIGNAL
DEVIC E UNDER TE S

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

tx

10% Vcc

Vpk

DIODE REVERSE
RECOV ERY ENE RGY

Irr

Defining E

t3

, trr, Qrr, I

rec

10% Irr

DIODE RE COVE RY
WAVEFORMS

t4

Erec =

Vd id dt

∫

t3

t4

rr

Vcc

t0

t1

t2

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94487

8 Revision: 01-Sep-08

CPV364M4FPbF

1000 V

50 V

6000 µF

100 V

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

L

V

C

D.U.T.

480 V

=

R

L

at 25 °C

4 x I

0 - 480 V

1

C

Q1

3

Q2

618

71319

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95066

Document Number: 94487 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Sep-08 9

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

IMS-2 (SIP)

Case Outline - IMS-2

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

5.08 (0.200)
6 x

62.43 (2.458)

53.85 (2.120)

1.27 (0.050)
13 x

2.54 (0.100)
6 x

IMS-2 Package Outline (13 Pins)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

0.76 (0.030)
13 x

0.38 (0.015)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

Document Number: 95066 For technical questions concerning discrete products, contact: [e-mail]
Revision: 30-Jul-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1