C&H Technology CPV363M4UPbF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
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Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Phone – 1-800-274-4284
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
• Fully isolated printed circuit board mount package
CPV363M4UPbF
Vishay High Power Products
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
IMS-2
• Totally lead (Pb)-free
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
per phase (2.1 kW total)
I
RMS
with T
= 90 °C
C
T
J
Supply voltage 360 Vdc
Power factor 0.8
Modulation depth (see fig. 1) 115 %
(typical)
V
CE(on)
= 6.8 A, 25 °C
at I
C
7.1 A
125 °C
1.7 V
RMS
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay’s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current, each IGBT I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Diode maximum forward current I
Gate to emitter voltage V
Isolation voltage V
Maximum power dissipation, each IGBT P
Operating junction and storage temperature range T
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
Notes
(1)
Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
VCC = 80 % (V
), VGE = 20 V, L = 10 µH, RG = 23 Ω (see fig. 19)
CES
CM
LM
J
CES
FM
ISOL
, T
TC = 25 °C 13
C
T
= 100 °C 6.8
C
(1)
(2)
TC = 100 °C 6.1
F
GE
Any terminal to case, t = 1 min 2500 V
TC = 25 °C 36
D
T
= 100 °C 14
C
Stg
600 V
40
40
40
± 20 V
- 40 to + 150
5 to 7
(0.55 to 0.8)
(N ⋅ m)
RoHS
COMPLIANT
A
RMS
W
°C
lbf ⋅ in
Document Number: 94486 For technical questions, contact: ind-modules@vishay.com
Revision: 01-Sep-08 1
www.vishay.com
CPV363M4UPbF
Vishay High Power Products
IGBT SIP Module
(Ultrafast IGBT)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case, each IGBT, one IGBT in conduction R
Case to sink, flat, greased surface R
Weight of module
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
(1)
Collector to emitter breakdown voltage V
Temperature coeff. of breakdown voltage ΔV
Collector to emitter saturation voltage V
Gate threshold voltage V
Temperature coeff. of threshold voltage ΔV
Forward transconductance g
Zero gate voltage collector current I
Diode forward voltage drop V
Gate to emitter leakage current I
Notes
(1)
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %
(2)
Pulse width 5.0 µs; single shot
(BR)CES
/ΔTJVGE = 0 V, IC = 1.0 mA - 0.63 - V/°C
(BR)CES
CE(on)
GE(th)
/ΔT
GE(th)
J
(2)
fe
CES
FM
GES
(IGBT) - 3.5
thJC
(DIODE) - 5.5
thJC
(MODULE) 0.10 -
thCS
°C/WJunction to case, each DIODE, one DIODE in conduction R
20 - g
0.7 - oz.
VGE = 0 V, IC = 250 µA 600 - - V
IC = 6.8 A
V
= 15 V
= 13 A - 2.00 -
I
C
= 6.8 A, TJ = 150 °C - 1.70 -
I
C
GE
See fig. 2, 5
VCE = VGE, IC = 250 µA
-1.702.2
3.0 - 6.0
-- 11-mV/°C
VCE = 100 V, IC = 6.8 A 4.0 6.0 - S
VGE = 0 V, VCE = 600 V - - 250
V
= 0 V, VCE = 600 V, TJ = 150 °C - - 2500
GE
IC = 12 A
I
= 12 A, TJ = 150 °C - 1.3 1.6
C
See fig. 13
-1.41.7
VGE = ± 20 V - - ± 100 nA
V
µA
V
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94486
2 Revision: 01-Sep-08
CPV363M4UPbF
IGBT SIP Module
Vishay High Power Products
(Ultrafast IGBT)
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Total switching loss E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse recovery charge I
Diode reverse recovery charge Q
Diode peak rate of fall of recovery
during t
b
dI
(rec)M
ge
gc
d(on)
r
d(off)
f
on
off
ts
d(on)
r
d(off)
f
ts
ies
oes
res
rr
rr
g
IC = 6.8 A
= 400 V
V
CC
See fig. 8
TJ = 25 °C
I
= 6.8 A, VCC = 480 V
C
= 15 V, RG = 23 Ω
V
GE
Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18
TJ = 150 °C
= 6.8 A, VCC = 480 V
I
C
V
= 15 V, RG = 23 Ω
GE
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
VGE = 0 V
V
= 30 V
CC
ƒ = 1.0 MHz
See fig. 7
TJ = 25 °C
T
= 125 °C - 83 120
J
TJ = 25 °C
T
= 125 °C - 5.6 10
J
TJ = 25 °C
rr
/dt
T
= 125 °C - 220 600
J
= 25 °C
T
J
T
= 125 °C - 116 -
J
See fig. 14
See fig. 15
See fig. 16
See fig. 17
I
= 12 A
F
V
= 200 V
R
dI/dt = 200 A/µs
-5379
-7.712
nCGate to emitter charge (turn-on) Q
-2131
-43-
-14-
-95140
ns
-83190
-0.17-
-0.15-
mJTurn-off switching loss E
- 0.32 0.45
-41-
-16-
- 110 -
ns
- 230 -
-0.52-mJ
- 1100 -
-73-
pFOutput capacitance C
-14-
-4260
-3.56.0
-80180
- 180 -
ns
A
nC
A/µs
Document Number: 94486 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 01-Sep-08 3
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