C&H Technology CPV363M4KPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

IMS-2

IGBT SIP Module

(Short Circuit Rated Ultrafast IGBT)

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

per phase (1.94 kW total)

I

RMS

with T

= 90 °C

C

T

J

Supply voltage 360 V

Power factor 0.8

Modulation depth (see fig. 1) 115 %

V

(typical)

CE(on)

= 6.0 A, 25 °C

at I

C

Package SIP

Circuit Three Phase Inverter

6.7 A

125 °C

1.72 V

RMS

DC

CPV363M4KPbF

Vishay Semiconductors

FEATURES

• Short circuit rated ultrafast: Optimized for high
speed over 5.0 kHz (see fig. 1 for current vs.
frequency curve), and short circuit rated to 10 μs
at 125 °C, V

= 15 V

GE

• Fully isolated printed circuit board mount
package

• Switching-loss rating includes all “tail” losses

•HEXFRED

®

soft ultrafast diodes

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Short circuit withstand time t

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and 
storage temperature range

Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300

Mounting torque 6-32 or M3 screw

CES

TC = 25 °C 11

C

T

= 100 °C 6.0

C

Repetitive rating; VGE = 20 V, pulse width

CM

LM

FM

SC

ISOL

T

, T

J

limited by maximum junction temperature
See fig. 20

VCC = 80 % (V
L = 10 μH, R
See fig. 19

TC = 100 °C 6.1 A

F

GE

Any terminal to case, t = 1 minute 2500 V

TC = 25 °C 36

D

T

= 100 °C 14

C

Stg

), VGE = 20 V,

CES

= 22

G

600 V

22 A

22 A

22 A

10 μs

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

A

RMS

W

°C

lbf  in

(N m)

Revision: 11-Jun-13

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CPV363M4KPbF

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module

(IGBT) - 3.5

thJC

(DIODE) - 5.5

thJC

(MODULE) 0.10 -

thCS

20 - g

0.7 - oz.

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage V

Collector to emitter saturation voltage V

(BR)CES

(BR)CES

CE(on)

VGE = 0 V, IC = 250 μA 600 - - V

TJVGE = 0 V, IC = 1.0 mA - 0.45 - V/°C

IC = 6.0 A

V

= 11 A - 2.00 -

I

C

= 6.0 A, TJ = 150 °C

I

C

GE

See fig. 2, 5

Vishay Semiconductors

- 1.72 2.10

= 15 V

-

1.60

°C/WJunction to case, each DIODE, one DIODE in conduction R

-

V

Gate threshold voltage V

Temperature coeff. of threshold voltage V

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

Notes

(1)

Pulse width  80 μs, duty factor  0.1 %

(2)

Pulse width 5.0 μs; single shot

GE(th)

GE(th)

fe

CES

GES

FM

VCE = VGE, IC = 250 μA

/T

J

(2)

VCE = 100 V, IC = 12 A 3.0 6.0 - S

VGE = 0 V, VCE = 600 V

V

= 0 V, VCE = 600 V, TJ = 150 °C - - 2500

GE

IC = 12 A

I

= 12 A, TJ = 150 °C - 1.3 1.6

C

See fig. 13

3.0 - 6.0

-- 13 -mV/°C

--

-1.41.7

250

μA

V

VGE = ± 20 V - - ± 100 nA

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CPV363M4KPbF

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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Short circuit withstand time t

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery
current

Diode reverse recovery charge Q

Diode peak rate of fall of recovery
during t

b

dI

d(on)

d(off)

off

SC

d(on)

d(off)

oes

res

I

(rec)M

g

ge

gc

r

f

on

IC = 6 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 6.0 A, VCC = 480 V

C

V

= 15 V, RG = 23

GE

Energy losses include “tail” and diode 
reverse recovery
See fig. 9, 10, 18

ts

VCC = 360 V, TJ = 125 °C
V

= 15 V, RG = 23 , V

GE

CPK

< 500 V

TJ = 150 °C
I

= 6.0 A, VCC = 480 V

r

C

V

= 15 V, RG = 23 

GE

Energy losses include “tail” and 

f

ts

ies

diode reverse recovery
See fig. 10, 11, 18

VGE = 0 V
V

= 30 V

CC

See fig. 7

ƒ = 1.0 MHz

rr

T

= 125 °C - 80 120

J

TJ = 25 °C

TJ = 25 °C

rr

T

= 125 °C - 5.6 10

J

TJ = 25 °C

rr

/dt

T

= 125 °C - 220 600

J

= 25 °C

T

J

T

= 125 °C - 120 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

I

= 12 A

F

V

= 200 V

R

dI/dt = 200 A/μs

Vishay Semiconductors

-6191

-7.411

-2740

-55-

-24-

- 107 160

- 92 140

-0.28-

-0.10-

- 0.39 0.50

10 - - μs

-54-

-24-

- 161 -

- 244 -

-0.60-mJ

- 740 -

- 100 -

-9.3-

-4260

-3.56.0

- 80 180

- 180 -

nCGate to emitter charge (turn-on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/μs




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Document Number: 94485

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0.1

1

10

100

1 10

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

CE

C

V = 15 V
20μs PULSE WIDTH

GE

T = 25 C

J

o

T = 150 C

J

o

0

3

6

9

12

25 50 75 100 125 150

Maximum DC Collector Current (A)

T , Case Temperature (°C)

C

V = 15V

GE

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

T , Junction T emperature ( C)

V , Collector-to-Emitter Voltage(V)

J

°

CE

V = 15 V
80 us PULSE WIDTH

GE

I = A12

C

I = A6

C

I = A3

C

CPV363M4KPbF

Vishay Semiconductors

12

10

8

6

4

Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage

LOAD CURRENT (A)

2

0

0.1 1 10 100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

3.50

2.92

2.33

1.75

1.17

Total Output Power (kW)

0.58

0.00

Fig. 2 - Typical Output Characteristics

100

T = 150 C

J

10

Revision: 11-Jun-13

1

C

I , Collector-to-Emitter Current (A)

0.1

Fig. 3 - Typical Transfer Characteristics

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5 10 15

V , Gate-to-Emitter Voltage (V)

GE

Fig. 4 - Maximum Collector Current vs. Case Temperature

o

o

T = 25 C

J

V = 50V

CC

5μs PULSE WIDTH

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

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0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SI NGLE PULSE
(THERMAL RESPONSE)

Thermal Response (Z )

P

t

2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

12

J

DM

thJC

C

1 10 100

0

300

600

900

1200

1500

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

CE

V
C
C
C

=
=
=
=

0V,
C
C
C

f = 1MHz

+ C

+ C

C SHORTED

GE
ies ge gc , ce
res gc
oes ce g c

C

ies

C

oes

C

res

0 20 40 60 80

0

4

8

12

16

20

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

G

GE

V = 400V

I = 6.0A

CC
C

R

0 10 20 30 40 50

0.0

0.2

0.4

0.6

0.8

1.0

R , Gate Resistance (Ω)

Total Switching Losses (mJ)

G

V = 480V
V = 15V
T = 25 C

I = 6.0A

CC

GE
J
C

°

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

CPV363M4KPbF

Vishay Semiconductors

Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage

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Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

For technical questions within your region: [e-mail]

Fig. 10 - Typical Switching Losses vs. Junction Temperature

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Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

Total Switching Losses (mJ)

0.1

10Ω

R = 23

Ω

G

V = 15V

GE

V = 480V

CC

I = 12 A

C

I = 6 A

C

I = 3 A

C

°

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Document Number: 94485

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0 3 6 9 12 15

0.0

0.3

0.6

0.9

1.2

1.5

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

C

R = 23
T = 150 C

V = 0V

V = 15V

G
J
CC
GE

°

Ω

480V

A

1

10

100

0.4 0.8 1.2 1.6 2.0 2.4

FM

F

Instantaneous Forward Current - I (A)

Forward Voltage Drop - V (V)

T = 150°C

T = 125°C

T = 25°C

J

J

J

100

V = 20V
T = 125°C

CPV363M4KPbF

Vishay Semiconductors

GE

J

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

SAFE OP ERATING AREA

V , Colle ctor-to-Emitte r Voltag e (V)

CE

Fig. 12 - Turn-Off SOA

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Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

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CPV363M4KPbF

Vishay Semiconductors

160

V = 200V

R

T = 125°C

J

T = 25°C

J

120

I = 24A

F

I = 12A

F

80

rr

t - (ns)

40

0

di /dt - (A/µs)

f

I = 6.0A

F

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

600

V = 200V

R

T = 125°C

J

T = 25 °C

J

400

I = 24A

RR

Q - (nC)

200

I = 6.0A

F

0001001

0

I = 12A

F

di /dt - (A/µs)

f

Fig. 16 - Typical Stored Charge vs. dI

F

0001001

/dt

F

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 24A

F

I = 12A

F

di /dt - (A/µs)

f

IRRM

I - (A)

10

1

I = 6.0A

F

Fig. 15 - Typical Recovery Current vs. dI

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

1000

100

di(rec)M/dt - (A/µs)

0001001

/dt

F

10

Fig. 17 - Typical dI

I = 6.0A

F

I = 24A

F

di /dt - (A/µs)

f

/dt vs dIF/dt

(rec)M

I = 12A

F

0001001

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Same type

device as

D.U.T.

D.U.T.

430 µF

80 %

of V

CE

DIODE REVERSE
RECOVE RY ENERG Y

tx

∫

Erec =

t4

t3

Vd id dt

t4

t3

DIODE RECOVERY
WAVEFORMS

Ic

Vpk

10% Vcc

Irr

10% Irr

Vcc

trr

∫

Qrr =

trr

tx

id dt

Vd Ic dt

Ic dt

Vg

GATE SIGNAL
DEVICE UNDER TES

T

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

t0

t1

t2

10% +Vg

CPV363M4KPbF

Vishay Semiconductors

GATE VOLTAGE D.U.T.

+Vg

Fig. 18a - Test Circuit for Measurements of ILM, Eon, E

I

, t

, tr, t

, t

d(off)

f

90% Ic

Ic

5% Ic

tf

Eoff =

∫

+Vge

10% Vce

Ic

td(off)

rr

d(on)

90% Vge

Vce

off(diode)

t1+5μS

Vce ic dt

Vce Ic dt

t1

, trr, Qrr,

DUT VOLTAGE
AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

Vce Ic dt

∫

t1

t2

Vcc

10% Ic

td(on)

Vce

90% Ic

5% Vce

tr

t1

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

, t

on

d(on)

r

t1

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

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t2

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

, t

, t

off

d(off)

f

Defining E

, trr, Qrr, I

rec

rr

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

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D.U.T.

50 V

6000 µF

100 V

1000 V

L

V

C

0 - 480 V

R

L

=

480 V

4 x I

C

at 25 °C

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

CPV363M4KPbF

Vishay Semiconductors

1

Q1

3

Q2

618

71319

Q3D1

9

41016

D2

12

D3

D4

Q5

15

Q6

D5

D6Q4

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95066

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DIMENSIONS in millimeters (inches)

IMS-2 Package Outline (13 Pins)

7.87 (0.310)

5.46 (0.215)

1.27 (0.050)

6.10 (0.240)

3.05 ± 0.38

(0.120 ± 0.015)

0.51 (0.020)

0.38 (0.015)

62.43 (2.458)

53.85 (2.120)

Ø 3.91 (0.154)

2 x

21.97 (0.865)

3.94 (0.155)

4.06 ± 0.51

(0.160 ± 0.020)

5.08 (0.200)
6 x

1.27 (0.050)
13 x

2.54 (0.100)
6 x

0.76 (0.030)
13 x

1 3 4 6 7 9 10 12 13 15 16 18 19171411258

Outline Dimensions

Vishay Semiconductors

IMS-2 (SIP)

Notes

(1)

Tolerance uless otherwise specified ± 0.254 mm (0.010")

(2)

Controlling dimension: inch

(3)

Terminal numbers are shown for reference only

Document Number: 95066 For technical questions, contact: [e-mail]
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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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