C&H Technology CPV362M4FPbF User Manual

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Suite 108
Minnetonka, MN 55345

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Application

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IGBT SIP Module

(Fast IGBT)

IMS-2

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

I

per phase (3.1 kW total)

RMS

with T

= 90 °C

C

T

J

Supply voltage (DC) 360 V

Power factor 0.8

Modulation depth See fig. 1 115 %

11 A

125 °C

CPV362M4FPbF

Vishay High Power Products

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

®

• HEXFRED

• Optimized for medium operating (1 to 10 kHz)
See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

soft ultrafast diodes

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and
storage temperature range

Soldering temperature For 10 s 300 (0.063" (1.6 mm) from case)

Mounting torque 6-32 or M3 screw

CES

TC = 25 °C 8.8

C

T

= 100 °C 4.8

C

Repetitive rating; VGE = 20 V,

CM

LM

FM

ISOL

T

, T

J

pulse width limited by maximum
junction temperature. See fig. 20

VCC = 80 % (V
L = 10 µH, R

TC = 100 °C 3.4

F

GE

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 23

D

T

= 100 °C 9.1

C

Stg

), VGE = 20 V,

CES

= 50 Ω See fig. 19

G

600 V

26

800

26

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

A

RMS

W

°C

lbf · in

(N · m)

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module 20 (0.7) - g (oz.)

(IGBT) - 5.5

thJC

(diode) - 9.0

thJC

(module) 0.1 -

thCS

°C/WJunction to case, each diode, one diode in conduction R

Document Number: 94361 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

www.vishay.com

CPV362M4FPbF

Vishay High Power Products

IGBT SIP Module

(Fast IGBT)

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 µA
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.72 - V/°C

IC = 4.8 A

V

= 15 V

Collector to emitter saturation voltage V

Gate threshold voltage V

Gate to emitter leakage current I

Temperature coeff. of threshold voltage ΔV

GE(th)

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

= 8.8 A - 1.66 -

CE(on)

GE(th)

GES

I

C

= 4.8 A, TJ = 150 °C - 1.42 -

I

C

VCE = VGE, IC = 250 µA 3.0 - 6.0

VGE = ± 20 V - - ± 100 nA

/ΔTJVGE = 0 V, IC = 1.0 mA - -11 - mV/°C

fe

VCE = 100 V, IC = 4.8 A
Pulse width 5.0 µs; single shot

VGE = 0 V, VCE = 600 V -

CES

FM

= 0 V, VCE = 600 V, TJ = 150 °C - - 1700

V

GE

IC = 8.0 A
I

= 8.0 A, TJ = 150 °C

C

GE

See fig. 2, 5

See fig. 13

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn on) Q

Gate to collector charge Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery during t

b

dI

ge

gc

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

ies

oes

res

rr

rr

(rec)M

g

IC = 4.8 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 4.8 A, VCC = 480 V

C

= 15 V, RG = 50 Ω

V

GE

Energy losses include “tail” and diode
reversev recovery.
See fig. 9, 10, 18

ts

TJ = 150 °C,
I

= 4.8 A, VCC = 480 V

C

V

= 15 V, RG = 50 Ω

GE

Energy losses include “tail” and
diode reverse recovery

ts

rr

See fig. 10, 11, 18

VGE = 0 V
V

TJ = 25 °C

T

TJ = 25 °C

T

TJ = 25 °C

T

T

/dt

T

= 30 V

CC

= 125 °C - 55 90

J

= 125 °C - 4.5 8.0

J

= 125 °C - 124 360

J

= 25 °C

J

= 125 °C - 210 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

See fig. 7

= 8.0 A

I

F

= 200 V

V

R

dI/dt = 200 A/µs

600 - - V

- 1.41 1.7

2.9 5.0 - S

­250

-1.41.7

-1.31.6

-3045

-4.06.0

-1320

-49-

-22-

- 200 300

- 214 320

-0.23-

-0.33-

-0.450.70

-48-

-25-

-435-

-364-

-0.93- mJ

-340-

-63-

-5.9-

-3755

-3.550

- 65 138

-240-

V

µA

V

nCGate to emitter charge (turn on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/µs

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94361

2 Revision: 29-Apr-08