C&H Technology CPV362M4FPbF User Manual

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Suite 108
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IGBT SIP Module

(Fast IGBT)

IMS-2

PRODUCT SUMMARY

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

I

per phase (3.1 kW total)

RMS

with T

= 90 °C

C

T

J

Supply voltage (DC) 360 V

Power factor 0.8

Modulation depth See fig. 1 115 %

11 A

125 °C

CPV362M4FPbF

Vishay High Power Products

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

®

• HEXFRED

• Optimized for medium operating (1 to 10 kHz)
See fig. 1 for current vs. frequency curve

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.

soft ultrafast diodes

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current, each IGBT I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Isolation voltage V

Maximum power dissipation, each IGBT P

Operating junction and
storage temperature range

Soldering temperature For 10 s 300 (0.063" (1.6 mm) from case)

Mounting torque 6-32 or M3 screw

CES

TC = 25 °C 8.8

C

T

= 100 °C 4.8

C

Repetitive rating; VGE = 20 V,

CM

LM

FM

ISOL

T

, T

J

pulse width limited by maximum
junction temperature. See fig. 20

VCC = 80 % (V
L = 10 µH, R

TC = 100 °C 3.4

F

GE

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 23

D

T

= 100 °C 9.1

C

Stg

), VGE = 20 V,

CES

= 50 Ω See fig. 19

G

600 V

26

800

26

± 20 V

- 40 to + 150

5 to 7

(0.55 to 0.8)

A

RMS

W

°C

lbf · in

(N · m)

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case, each IGBT, one IGBT in conduction R

Case to sink, flat, greased surface R

Weight of module 20 (0.7) - g (oz.)

(IGBT) - 5.5

thJC

(diode) - 9.0

thJC

(module) 0.1 -

thCS

°C/WJunction to case, each diode, one diode in conduction R

Document Number: 94361 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

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CPV362M4FPbF

Vishay High Power Products

IGBT SIP Module

(Fast IGBT)

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coeff. of breakdown voltage ΔV

(BR)CES

(BR)CES

VGE = 0 V, IC = 250 µA
Pulse width ≤ 80 µs, duty factor ≤ 0.1 %

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.72 - V/°C

IC = 4.8 A

V

= 15 V

Collector to emitter saturation voltage V

Gate threshold voltage V

Gate to emitter leakage current I

Temperature coeff. of threshold voltage ΔV

GE(th)

Forward transconductance g

Zero gate voltage collector current I

Diode forward voltage drop V

= 8.8 A - 1.66 -

CE(on)

GE(th)

GES

I

C

= 4.8 A, TJ = 150 °C - 1.42 -

I

C

VCE = VGE, IC = 250 µA 3.0 - 6.0

VGE = ± 20 V - - ± 100 nA

/ΔTJVGE = 0 V, IC = 1.0 mA - -11 - mV/°C

fe

VCE = 100 V, IC = 4.8 A
Pulse width 5.0 µs; single shot

VGE = 0 V, VCE = 600 V -

CES

FM

= 0 V, VCE = 600 V, TJ = 150 °C - - 1700

V

GE

IC = 8.0 A
I

= 8.0 A, TJ = 150 °C

C

GE

See fig. 2, 5

See fig. 13

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn on) Q

Gate to collector charge Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse recovery current I

Diode reverse recovery charge Q

Diode peak rate of fall of recovery during t

b

dI

ge

gc

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

ies

oes

res

rr

rr

(rec)M

g

IC = 4.8 A

= 400 V

V

CC

See fig. 8

TJ = 25 °C
I

= 4.8 A, VCC = 480 V

C

= 15 V, RG = 50 Ω

V

GE

Energy losses include “tail” and diode
reversev recovery.
See fig. 9, 10, 18

ts

TJ = 150 °C,
I

= 4.8 A, VCC = 480 V

C

V

= 15 V, RG = 50 Ω

GE

Energy losses include “tail” and
diode reverse recovery

ts

rr

See fig. 10, 11, 18

VGE = 0 V
V

TJ = 25 °C

T

TJ = 25 °C

T

TJ = 25 °C

T

T

/dt

T

= 30 V

CC

= 125 °C - 55 90

J

= 125 °C - 4.5 8.0

J

= 125 °C - 124 360

J

= 25 °C

J

= 125 °C - 210 -

J

See fig. 14

See fig. 15

See fig. 16

See fig. 17

See fig. 7

= 8.0 A

I

F

= 200 V

V

R

dI/dt = 200 A/µs

600 - - V

- 1.41 1.7

2.9 5.0 - S

­250

-1.41.7

-1.31.6

-3045

-4.06.0

-1320

-49-

-22-

- 200 300

- 214 320

-0.23-

-0.33-

-0.450.70

-48-

-25-

-435-

-364-

-0.93- mJ

-340-

-63-

-5.9-

-3755

-3.550

- 65 138

-240-

V

µA

V

nCGate to emitter charge (turn on) Q

ns

mJTurn-off switching loss E

ns

pFOutput capacitance C

ns

A

nC

A/µs

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Document Number: 94361

2 Revision: 29-Apr-08

CPV362M4FPbF

9

8

7

6

5

4

3

Load Current (A)

2

1

0

0.1 1

100

TJ = 25 °C

IGBT SIP Module

(Fast IGBT)

10

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

10

8

Vishay High Power Products

2.63

100

2.34

2.05

1.75

1.46

1.17

0.88

0.58

0.29

0.00

Total Output Power (kW)

TC = 90 °C

= 125 °C

T

J

Power factor = 0.8
Modulation depth = 1.15

= 50 % of rated voltage

V

CC

TJ = 150 °C

10

- Collector to Ermitter Current (A)

C

I

1

1

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

100

TJ = 150 °C

10

TJ = 25 °C

- Collector to Emitter Current (A)

C

I

1

6 7 8 9 10 11 12 13 145

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

VGE = 15 V
20 µs pulse width

VCC = 50 V
5 µs pulse width

6

4

2

Maximum DC Collector Current (A)

0

10

25 50 75 100 125 150

TC - Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

2.5

VGE = 15 V
80 µs pulse width

2.0

1.5

IC = 9.6 A

IC = 4.8 A

IC = 2.4 A

- Collector to Emitter Voltage (V)

CE

1.0

V

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

Document Number: 94361 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 3

CPV362M4FPbF

Vishay High Power Products

10

1

0.1

- Thermal Impedance

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

1000

800

Single pulse

(thermal response)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cce shorted

C

ies

C

= C

res

gc

C

= Cce + C

oes

IGBT SIP Module

(Fast IGBT)

P

DM

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

0.46

VCC = 480 V
V

= 15 V

GE

T

= 25 °C

gc

0.45

J

I

= 4.8 A

C

1/t2

t

1

thJC

t

2

+ T

C

10

600

C

ies

400

C - Capacitance (pF)

200

C

oes

C

res

0

1

10

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

20

VCC = 400 V

= 4.8 A

I

C

16

12

8

4

- Gate to Emitter Voltage (V)

GE

V

0

0

6121824

QG - Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

100

30

0.44

0.43

Total Switching Losses (mJ)

0.42

10

20 30 40

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

10

RG = 50 Ω

= 15 V

V

GE

= 480 V

V

CC

IC = 9.6 A

1

IC = 4.8 A

IC = 2.4 A

Total Switching Losses (mJ)

0.1

- 40 - 20 0 604020 80 100 120 140 160- 60

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

50

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Document Number: 94361

4 Revision: 29-Apr-08

CPV362M4FPbF

2.0

RG = 50 Ω
T

= 150 °C

J

V

= 480 V

CC

V

= 15 V

1.5

GE

1.0

0.5

Total Switching Losses (mJ)

0.0

2468100

IC - Collector to Emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector to Emitter Current

100

VGE = 20 V
T

= 125 °C

J

Safe operating area

10

IGBT SIP Module

(Fast IGBT)

Vishay High Power Products

100

V

= 200 V

R

T

= 125 °C

J

T

= 25 °C

J

80

IF = 16 A

60

(ns)

rr

t

40

I

= 4.0 A

F

20

0

100

dIF/dt (A/µs)

Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt

100

VR = 200 V
T

= 125 °C

J

T

= 25 °C

J

IF = 16 A

- (A)

IRRM

I

10

IF = 8.0 A

I

= 8.0 A

F

1000

- Collector to Emitter Current (A)

C

I

1

1

10 100

VCE - Collector to Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

100

10

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

1

- Instantaneous Forward Current (A)

0.1

F

I

0.4 2.0 2.41.61.20.8 2.8

J

VFM - Forward Voltage Drop

Fig. 13 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

1000

3.2

- (nC)

rr

Q

1

100

dIF/dt - (A/µs)

Fig. 15 - Typical Recovery Current vs. dI

500

VR = 200 V

= 125 °C

T

J

T

= 25 °C

J

400

300

200

100

0

100

IF = 16 A

IF = 8.0 A

dIF/dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dI

IF = 4.0 A

IF = 4.0 A

1000

/dt

F

1000

/dt

F

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Revision: 29-Apr-08 5

CPV362M4FPbF

Vishay High Power Products

10 000

/dt - (A/µs)

(rec)M

dI

1000

100

80 %
of V

VR = 200 V

= 125 °C

T

J

T

= 25 °C

J

100

Fig. 17 - Typical dI

CE

I

F

IF = 16 A

dIF/dt - (A/µs)

430 µF

IF = 4.0 A

= 8.0 A

(REC)M

Same type
device
as
D.U.T.

D.U.T.

/dt vs dIF/dt

IGBT SIP Module

(Fast IGBT)

1000

Gate voltage D.U.T.

10 % + V

G

Vce

10 %

V

CC

I

C

t

(on)

d

tr

t1

90 % I

5 % V

+ V

G

D.U.T. voltage
and current

I

pk

C

CE

Eon =

t2

I

C

t2
V

dt

CE IC

∫

t1

Fig. 18c - Test Waveforms of Circuit of Fig. 18a,

Defining E

I

C

tx

10 % V

CC

V

pk

I

rr

t

rr

, t

on

d(on)

, t

r

Qrr =

∫

10 % I

rr

Diode recovery
waveforms

t

rr

IC dt
tx

V

CC

Fig. 18a - Test Circuit for Measurement of I

I

, t

, tr, t

rr

d(on)

d(off)

90 % V

+ V

GE

I

C

td(off)

10 %
V

CE

V

t1

GE

CE

I

C

tf

t2

Fig. 18b - Test Waveforms of Circuit of Fig. 18a,

Defining E

, t

off

d(off)

LM

, t

f

90 % I

, t

, Eon, E

C

5 % I

Eoff =

f

C

∫

off(diode)

t1 + 5 µs
V

CE IC

t1

dt

, trr, Qrr,

t4

E

=

rec

V

dt

d IC

∫

Diode reverse
recovery energy

t3

t3

t4

Fig. 18d - Test Waveforms of Circuit of Fig. 18a,

Defining E

t0

t1

t2

, trr, Qrr, I

rec

rr

V

Gate signal

G

device under test

Current D.U.T.

Voltage in D.U.T.

Current in D1

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

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Document Number: 94361

6 Revision: 29-Apr-08

CPV362M4FPbF

1000 V

50 V

6000 µF
100 V

Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit

CIRCUIT CONFIGURATION

IGBT SIP Module

Vishay High Power Products

(Fast IGBT)

L

*

V

C

D.U. T.

0 - 480 V

1

RL=

4 x I

480 V

at 25 °C

C

Q1

3

Q2

6

D1

Q3

9

4

D2

Q4

12

7

D3 D5

D4 D6

13

Q5

15

10

Q6

18

16

19

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95066

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Revision: 29-Apr-08 7

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.

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