C&H Technology CM900HB-90H User Manual

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MITSUBISHI HVIGBT MODULES

CM900HB-90H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM900HB-90H

● IC...................................................................900A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 4500V

● Insulated T ype

● 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3 - M4 NUTS

CM

171

57

±0.25

57

C

E

79.4

±0.25

C

E

G

20.25

41.25

61.5

57

±0.25

CC

EE

61.5

13

6 - M8 NUTS

20

±0.25

40

140

124

8 - φ7MOUNTING HOLES

38

5

28

5.2

C

G E

C

E

CIRCUIT DIAGRAM

15

40

LABEL

C

E

C

E

29.5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM900HB-90H

HIGH POWER SWITCHING USE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings

CES

V VGES IC ICM IE IEM PC Tj Tstg Viso

Collector-emitter voltage Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature Storage temperature Isolation voltage

—

Mounting torque

—

Mass

GE = 0V

V

CE = 0V

V DC, T

C = 85°C

Pulse (Note 1)

C = 25°C, IGBT part

T

—

— Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value

11100 –40 ~ +125 –40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

INSULATED TYPE

4500

±20 900

1800

900

1800

6000

N·m N·m N·m

2.2

V V A A A A

W

°C °C

V

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES VCE(sat)

Cies Coes Cres QG td (on) tr td (off) tf VEC trr Qrr Rth(j-c)Q Rth(j-c)R Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

V

CE = VCES, VGE = 0V

I

C = 90mA, VCE = 10V

V

GE = VGES, VCE = 0V j = 25°C

T T

j = 125°C

V

CE = 10V GE = 0V

V

CC = 2250V, IC = 900A, VGE = 15V

V V

CC = 2250V, IC = 900A

V

GE1 = VGE2 = 15V

R

G = 10Ω

I

C = 900A, VGE = 15V (Note 4)

Resistive load switching operation I

E = 900A, VGE = 0V E = 900A,

I die / dt = –1800A / µs (Note 1) Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied

j) should not increase beyond 125°C.

Min Typ Max

Limits

—

6.04.5

— — — — — — — — — — — — — — — — —

—

3.00

3.30 162

12.0

3.6 — — — — —

4.00 —

360 — —

0.007

0.009

0.018

18

7.5

0.5

3.90 — — — — —

2.40

6.00

1.20

5.20

1.80 —

—

Unit

mA

V

µA

V

nF nF nF

µC µs µs µs µs

V

µs µC

K/W K/W K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

TRANSFER CHARACTERISTICS

VCE = 10V

8000

6000

)

A

(

1800

1500

1200

900

OUTPUT CHARACTERISTICS

Tj = 25°C

(

TYPICAL

VGE=12V

)

VGE=20V VGE=15V

VGE=14V

VGE=10V

12000

)

A

(

10000

MITSUBISHI HVIGBT MODULES

CM900HB-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

(

TYPICAL

)

600

300

COLLECTOR CURRENT IC

0

2468

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

8

)

V

(

CE(sat)

VGE = 15V

6

(

TYPICAL

4

2

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

300 600 1200900 1500

COLLECTOR CURRENT IC (A

VGE=8V

)

T

j = 25°C

Tj = 125°C

4000

2000

CE

100

(V)

COLLECTOR CURRENT IC

0

4812

GATE-EMITTER VOLTAGE VGE (V

Tj = 25°C Tj = 125°C

16

200

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

10

)

V

(

CE(sat)

Tj = 25°C

8

(

TYPICAL

)

6

Ic=1800A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

18000

)

0

020161284

GATE-EMITTER VOLTAGE VGE (V

Ic=900A

Ic=450A

)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

)

V

8

(

TYPICAL

)

6

4

2

Tj = 25°C T

j = 125°C

0

EMITTER-COLLECTOR VOLTAGE VEC

EMITTER CURRENT IE (A

18000 300 600 1200900 1500

)

CAPACITANCE CHARACTERISTICS

3

10

)

7 5

nF

(

3 2

2

10

7 5

3 2

1

10

7 5

VGE = 15V, Tj = 25°C

3

Cies, Coes : f = 100kHz

2

CAPACITANCE Cies, Coes, Cres

Cres

0

10

–1

2310

(

TYPICAL

)

: f = 1MHz

5710023 5710123 5710

COLLECTOR-EMITTER VOLTAGE VCE (V

Cies

Coes

Cres

2

)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM900HB-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

5 3

VCC = 2250V, VGE = ±15V

2

R

G

)

10

µs

(

10

SWITCHING TIMES

10

= 10Ω, Tj = 125°C

Inductive load

1

7 5

3 2

0

7 5

3 2

–1

7 5

710

5

(

TYPICAL

2

23 5710

)

3

COLLECTOR CURRENT IC (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

7.0 VCC = 2250V, VGE = ±15V,

R

G

)

J/P

(

= 10Ω, Tj = 125°C,

6.0 Inductive load

5.0

(

TYPICAL

)

4.0

3.0

2.0

SWITCHING ENERGY

1.0

t

d(off)

t

d(on)

t

r

t

f

23 5

)

E

on

E

off

E

rec

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

1

10

)

7

VCC = 2250V, Tj = 125°C

µs

5

(

Inductive load

rr

3

IGBT drive conditions

2

V

GE

= ±15V, RG = 10Ω

0

10

7 5

3 2

–1

10

7 5

3 2

REVERSE RECOVERY TIME t

–2

10

710

5

TYPICAL

2

23 5710323 5

)

t

I

EMITTER CURRENT IE (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

(

TYPICAL

)

3.0

)

2.5

J/P

(

2.0

1.5

1.0

0.5

SWITCHING ENERGY

)

5

10

A

(

7

rr

5 3

2

4

rr

10 7 5

3 2

3

10 7 5

3 2

2

10

REVERSE RECOVERY CURRENT I

)

0

0 300 600 900 1200 1500 1800

CURRENT (A

GATE CHARGE CHARACTERISTICS

20

)

V

(

GE

VCC = 2250V I

16

C

= 900A

(

TYPICAL

)

12

8

4

GATE-EMITTER VOLTAGE V

0

0 2000 4000 6000 8000 10000 12000

GATE CHARGE QG (nC

0

0 5 10 15 20 3025

)

GATE RESISTANCE (Ω

)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

Single Pulse

7 5

T

C

= 25°C

3

th(j – c)Q

R

th(j – c)

2

R

0

10

7 5

3 2

–1

10

7 5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

10

–3

10

)

= 0.009K/W

th(j – c)R

= 0.018K/W

10

–2

23 57 23 57 23 57

TIME (s

–1

10

)

10

0

Mar. 2003

C&H Technology CM900HB-90H User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual