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MITSUBISHI HVIGBT MODULES
CM900HB-90H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM900HB-90H
● IC...................................................................900A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 4500V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
3 - M4 NUTS
CM
171
57
±0.25
57
C
E
79.4
±0.25
C
E
G
20.25
41.25
61.5
57
±0.25
CC
EE
61.5
13
6 - M8 NUTS
20
±0.25
40
140
124
8 - φ7MOUNTING HOLES
38
5
28
5.2
C
G
E
C
E
CIRCUIT DIAGRAM
15
40
LABEL
C
E
C
E
29.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003