C&H Technology CM900DUC-24NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM900DUC-24NF

A
D

P

(8 PLACES)

L

L

M

H H HHH H

K

G

U

H H

E

F

F

E2

C2

C2E1

C1

G2 E1

E2 G1

C1

V

BB

CC

B

C

J

J

G G

R (9 PLACES)

C2E1

E2

G2

E2

E1

G1

C2

Tr2

Di2

Di1

LABEL

U

W

S

N

X

Y

Z

AA

C1

C1

T

Tr1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Mega Power
Dual IGBTMOD™

900 Amperes/1200 Volts

Description:

Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

Housing Type (J.S.T. MFG. CO. LTD)

BB = VHR-2N
CC = VHR-5N

Dimensions Inches Millimeters

M 0.075±0.008 1.9±0.2

N 0.47 12.0

P 0.26 6.5

R M6 Metric M6

S 0.08 2.0

T 0.99 25.1

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

offering simplified system assembly
and thermal management.

Features:

£ Low Drive Power
£ Low V
£

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

£ Isolated Baseplate for Easy

Heatsinking

£ RoHS Compliant

Applications:

£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM900DUC-24NF
is a 1200V (V
Dual IGBTMOD Power
Module.

Current Rating V
Type Amperes Volts (x 50)

CM 900 24

), 900 Ampere

CES

CES

101/10 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM900DUC-24NF
Mega Power Dual IGBTMOD™

900 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM900DUC-24NF Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current DC (TC = 96°C)*1 I

Peak Collector Current (Pulse, Tj ≤ 150°C)*4 I

Emitter Current (TC = 25°C) I

Peak Emitter Current (Pulse)*4 I

Maximum Collector Dissipation (Tj < 150°C, TC = 25°C)*1 P

Mounting Torque, M6 Mounting Screws – 40 in-lb (max.)

Mounting Torque, M6 Main Terminal Screw – 40 in-lb (max.)

Weight (Typical) – 1450 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, I
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T

, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

FSM

-40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

900 Amperes

C

CM

*3

900 Amperes

E

*3

1800 Amperes

EM

5900 Watts

C

2500 Volts

iso

1800 Amperes

rating.

j(max)

2 01/10 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM900DUC-24NF
Mega Power Dual IGBTMOD™

900 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage (Chip) V

CES

I

GE(th)

V

GES

IC = 900A, VGE = 15V, Tj = 25°C*6 – 1.8 2.5 Volts

CE(sat)

(Without Lead Resistance) IC = 900A, VGE = 15V, Tj = 125°C*6 – 2.0 – Volts

Module Lead Resistance R

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

I

(lead)

– – 140 nF

ies

V

oes

– – 3 nF

res

Total Gate Charge QG VCC = 600V, IC = 900A, VGE = 15V – 4800 – nC

Inductive Turn-on Delay Time t

V

d(on)

Load Rise Time tr V

Switch Turn-off Delay Time t

R

d(off)

Times Fall Time tf Switching Operation – – 300 ns

Reverse Recovery Time t

Reverse Recovery Charge Q

Emitter-Collector Voltage (Chip) V

*3

I

rr

*3

– 50 – µC

rr

*3

I

EC

(Without Lead resistance)

External Gate Resistance RG 0.35 – 2.2 Ω

VCE = V

= 90mA, VCE = 10V 6 7 8 Volts

C

GE

= 900A, Terminal-Chip – 0.286 – mΩ

C

CE

CC

GE1

= 0.35Ω, Inductive Load – – 800 ns

G

= 900A, VGE = 0V*6 – – 3.2 Volts

E

, VGE = 0V – – 1 mA

CES

= V

, VCE = 0V – – 1.0 µA

GES

= 10V, VGE = 0V – – 16 nF

= 600V, IC = 900A, – – 600 ns

= V

= 15V, – – 200 ns

GE2

= 900A – – 500 ns

E

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

Thermal Resistance, Junction to Case*1 R

Contact Thermal Resistance*1 R

*1 Case temperatureTC and heatsink temperature (Tf) measured point is just under the chips.
*3 IE, IEM, VEC, I
*6 Pulse width and repetition rate should be such as to cause negligible teperature rise.

, I2t, trr, Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

FSM

Q Per IGBT (1/2 Module) – – 0.021 °C/W

th(j-c)

D Per Clamp Diode (1/2 Module) – – 0.034 °C/W

th(j-c)

Thermal Grease Applied (1/2 Module) – 0.012 – °C/W

th(c-f)

301/10 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

-1

10

0

10

1

0.5 1.5 1.0 3.0 3.52.0 2.5 4.0

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

10

4

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

0 4 8 12 16 20

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

3

4

0 400

2

1

0

2000800 1200 1600

VGE = 15V

Tj = 25°C
T

j

= 125°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 360A

IC = 1800A

IC = 900A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

VGE = 20V

10

11

12

15

13

9

8

Tj = 25°C

COLLECTOR CURRENT, I

C

, (AMPERES)

0

1200

1400

200

1000

800

600

400

1600

1800

0

1200

1400

200

1000

800

600

400

1600

1800

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

0 8 12 16 20

VCE = 10V

Tj = 25°C
T

j

= 125°C

4

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

SWITCHING TIME, (ns)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

R

G

= 0.35Ω

T

j

= 125°C

Inductive Load

t

f

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

10

3

10

2

10

3

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

t

rr

I

rr

VCC = 600V
V

GE

= ±15V

R

G

= 0.35Ω

T

j

= 25°C

Inductive Load

10

3

10

4

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

GATE RESISTANCE, RG, (Ω)

10

3

10

-1

10

0

10

2

10

1

SWITCHING TIME, (ns)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= ±15V

I

C

= 900A

T

j

= 125°C

Inductive Load

t

f

10

1

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

CM900DUC-24NF
Mega Power Dual IGBTMOD™

900 Amperes/1200 Volts

4 01/10 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

EMITTER CURRENT, IE, (AMPERES)

10

1

10

2

10

3

10

-1

10

0

10

1

10

-1

10

0

10

1

10

1

10

2

10

3

VCC = 600V
V

GE

= ±15V

T

j

= 125°C

R

G

= 0.35Ω

Inductive Load

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

1

10

2

10

3

10

1

10

2

10

3

VCC = 600V
V

GE

= ±15V

T

j

= 125°C

R

G

= 0.35Ω

E

on

E

off

Inductive Load

GATE RESISTANCE, RG, (Ω)

VCC = 600V
V

GE

= ±15V

T

j

= 125°C

I

C

= 900A

Inductive Load

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

on

, E

off

, (mJ/PULSE)

10

1

10

2

10

3

VCC = 600V
V

GE

= ±15V

T

j

= 125°C

I

C

= 900A

E

on

E

off

Inductive Load

10

1

10

2

10

3

SWITCHING LOSS, E

rr

, (mJ/PULSE)

REVERSE RECOVERY ENERGY VS.

FORWARD CURRENT

(TYPICAL)

SWITCHING LOSS VS. COLLECTOR CURRENT

(TYPICAL)

SWITCHING LOSS, E

rr

, (mJ/PULSE)

REVERSE RECOVERY ENERGY VS.

EXTERNAL GATE RESISTANCE

(TYPICAL)

SWITCHING ENERGY VS.

EXTERNAL GATE RESISTANCE

(TYPICAL)

TIME, (s)

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

Z

th

= R

th

• (NORMALIZED VALUE)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & CLAMP DIODE)

10

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

Single Pulse
T

C

= 25°C
Per Unit Base
R

th(j-c')

=

0.021°C/W
(IGBT)
R

th(j-c')

=

0.034°C/W
(Clamp)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

20

0

16

12

8

4

0

1000 2000 70005000 600040003000

VCC = 600V

VCC = 400V

IC = 900A

GATE CHARGE, V

GE

CM900DUC-24NF
Mega Power Dual IGBTMOD™

900 Amperes/1200 Volts

501/10 Rev. 0