C&H Technology CM900DU-24NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM900DU-24NF

A
D

P

(8 PLACES)

L

TC MEASURED POINTS
(THE SIDE OF CU BASEPLATE)

L

M

HH HHHH

K

G

U

HH

E

F

F

C2E1

E2

C1

G2
E2

G1

E2

C

C2E1

C

GE

EG

C1

E1

C2

LABEL

V

S

T

BUC

J

J

G G

R (9 PLACES)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Mega Power Dual™
IGBTMOD

900 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con­sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.91 150.0

B 5.10 129.5

C 1.67±0.01 42.5±0.25

D 5.41±0.01 137.5±0.25

E 6.54 166.0

F 2.91±0.01 74.0±0.25

G 1.65 42.0

H 0.55 14.0

J 1.50±0.01 38.0±0.25

K 0.16 4.0

Housing Type (J.S.T. MFG. CO. LTD)

S = VHR-2N
T = VHR-5N

Dimensions Inches Millimeters

L 1.36 +0.04/-0.02 34.6 +1.0/-0.5

M 0.075±0.08 1.9±0.2

P 0.26 6.5

R M6 Metric M6

U 0.62 15.7

V 0.71 18.0

W 0.75 19.0

X 0.43 11.0

Y 0.83 21.0

Z 0.41 10.5

AA 0.22 5.5

heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ High Power UPS
£ Large Motor Drives
£ Utility Interface Inverters

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM900DU-24NF is
a 1200V (V
IGBTMOD Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 900 24

), 900 Ampere Dual

CES

CES

102/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM900DU-24NF
Mega Power Dual™ IGBTMOD

900 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM900DU-24NF Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current DC (TC' = 96°C)** IC 900 Amperes

Peak Collector Current (Tj ≤ 150°C) I

Emitter Current*** IE 900 Amperes

Peak Emitter Current*** IEM 1800* Amperes

Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C) PC 2550 Watts

Mounting Torque, M6 Mounting Screws – 40 in-lb

Mounting Torque, M6 Main Terminal Screw – 40 in-lb

Weight (Typical) – 1400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

-40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

1800* Amperes

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

V

GES

I

GE(th)

IC = 900A, VGE = 15V, Tj = 25°C – 1.8 2.5 Volts

CE(sat)

VCE = V

GE

= 90mA, VCE = 10V 6 7 8 Volts

C

, VGE = 0V – – 1 mA

CES

= V

, VCE = 0V – – 1.0 μA

GES

(Without Lead Resistance) (Chip) IC = 900A, VGE = 15V, Tj = 125°C – 2.0 – Volts

Module Lead Resistance R

I

(lead)

= 900A, Terminal-chip – 0.143 – mΩ

C

Total Gate Charge QG VCC = 600V, IC = 900A, VGE = 15V – 4800 – nC

Emitter-Collector Voltage*** VEC I

= 900A, VGE = 0V – – 3.2 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr I

Switch Turn-off Delay Time t

Times Fall Time tf R

Diode Reverse Recovery Time*** trr Inductive Load – – 500 ns

Diode Reverse Recovery Charge*** Qrr Switching Operation – 50 – μC

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** TC’ measurement points is just under the chips. If this value is used, R
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

– – 140 nF

ies

V

oes

– – 3 nF

res

V

d(on)

V

d(off)

= 10V, VGE = 0V – – 16 nF

CE

= 600V, – – 600 ns

CC

= 900A, IE = 900A, – – 200 ns

C

= V

GE1

should be measured just under the chips.

th(f-a)

= 15V, – – 800 ns

GE2

= 0.35Ω, – – 300 ns

G

rating.

j(max)

2 02/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

0

10

-1

10

1

0.5 1.5 1.0 3.0 3.52.0 2.5 4.0

10

2

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

10

4

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

048121620

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

3

4

0 300 900

2

1

0

18001200 1500

VGE = 15V

Tj = 25°C
T

j

= 125°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 360A

IC = 1800A

IC = 900A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 12345 678910

1000

1200

400

200

0

VGE =
20V

10

11

12

15

13

9

8

Tj = 25

o

C

800

600

1600

1400

1800

1000

1200

400

200

800

600

1600

1400

1800

600

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

0812 16020

VCE = 10V

Tj = 25°C
T

j

= 125°C

4

10

-1

CM900DU-24NF
Mega Power Dual™ IGBTMOD

900 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

T

Thermal Resistance, Junction to Case R

T

Contact Thermal Resistance R

External Gate Resistance RG 0.35 — 2.2 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.049 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.078 °C/W

th(j-c)

Q Per IGBT 1/2 Module, – – 0.021 °C/W

th(j-c')

Reference Point Under Chip

C

D Per FWDi 1/2 Module, TC Reference – – 0.034 °C/W

th(j-c')

Reference Point Under Chip

C

Per 1/2 Module, Thermal Grease Applied – 0.016 – °C/W

th(c-f)

302/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0

16

12

8

4

0

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

1000 2000 4000 70003000 50006000

VCC = 600V

t

d(off)

t

d(on)

t

r

VCC = 600V

V

GE

= 15V

R

G

= 0.35Ω

T

j

= 125°C

Inductive Load

t

f

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

t

rr

I

rr

VCC = 600V
V

GE

= 15V

R

G

= 1.0Ω

T

j

= 125°C

Inductive Load

VCC = 400V

IC = 900A

10

3

10

3

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY ENERGY, E

rr

, (mJ/PULSE)

REVERSE RECOVERY ENERGY VS.

EMITTER CURRENT

(TYPICAL)

10

1

10

2

10

3

10

0

10

1

10

2

VCC = 600V
V

GE

= 15V

T

j

= 125°C

R

G

= 0.35Ω

Inductive Load

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

SWITCHING LOSS VS. COLLECTOR CURRENT

(TYPICAL)

10

1

10

2

10

3

10

0

10

2

10

1

10

3

VCC = 600V
V

GE

= 15V

T

j

= 125°C

R

G

= 0.35Ω

E

SW(on)

E

SW(off)

Inductive Load

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Per Unit Base
R

th(j-c)

= 0.049°C/W (IGBT)

R

th(j-c)

= 0.078°C/W (FWDi)
Single Pulse
T

C

= 25°C

EXTERNAL GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY ENERGY, E

rr

, (mJ/PULSE)

REVERSE RECOVERY ENERGY VS.

EXTERNAL GATE RESISTANCE

(TYPICAL)

VCC = 600V
V

GE

= 15V

T

j

= 125°C

I

C

= 900A

Inductive Load

EXTERNAL GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

SWITCHING ENERGY VS.

EXTERNAL GATE RESISTANCE

(TYPICAL)

0 1.51.00.5 2.52.0

10

0

10

2

10

1

10

3

VCC = 600V
V

GE

= 15V

T

j

= 125°C

I

C

= 900A

E

SW(on)

E

SW(off)

Inductive Load

0 1.51.00.5 2.52.0

10

0

10

2

10

1

10

3

CM900DU-24NF
Mega Power Dual™ IGBTMOD

900 Amperes/1200 Volts

4 02/10 Rev. 1