C&H Technology CM800HB-66H User Manual

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MITSUBISHI HVIGBT MODULES

CM800HB-66H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM800HB-66H

● IC...................................................................800A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 3300V

● Insulated T ype

● 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

3 - M4 NUTS

CM

57

C

10.65

48.8

±0.25

114

C

E

18

±0.25

57

C

E

G

10.35

61.5

4 - M8 NUTS

20

±0.25

40

140

124

E

6 - φ7MOUNTING HOLES

5.2

C

G E

CIRCUIT DIAGRAM

15

40

CC

E

38

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

28

LABEL

29.5

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM800HB-66H

HIGH POWER SWITCHING USE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings

CES

V VGES IC ICM IE IEM PC Tj Tstg Viso

Collector-emitter voltage Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature Storage temperature Isolation voltage

—

Mounting torque

—

Mass

GE = 0V

V

CE = 0V

V DC, T

C = 100°C

Pulse (Note 1)

C = 25°C, IGBT part

T

—

— Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value

10400 –40 ~ +150 –40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

INSULATED TYPE

3300

±20 800

1600

800

1600

6000

N·m N·m N·m

1.5

V V A A A A

W

°C °C

V

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES VCE(sat)

Cies Coes Cres QG td (on) tr td (off) tf VEC trr Qrr Rth(j-c)Q Rth(j-c)R Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

V

CE = VCES, VGE = 0V

I

C = 80mA, VCE = 10V

V

GE = VGES, VCE = 0V j = 25°C

T T

j = 125°C

V

CE = 10V GE = 0V

V

CC = 1650V, IC = 800A, VGE = 15V

V V

CC = 1650V, IC = 800A

V

GE1 = VGE2 = 15V

R

G = 2.5Ω

I

C = 800A, VGE = 15V (Note 4)

Resistive load switching operation I

E = 800A, VGE = 0V E = 800A,

I die / dt = –1600A / µs (Note 1) Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied

j) should not increase beyond 150°C.

Min Typ Max

Limits

—

6.04.5

— — — — — — — — — — — — — — — — —

—

3.80

4.00 120

12.0

3.6

5.7 — — — —

2.80 —

270 — —

0.008

0.012

0.024

10

7.5

0.5

4.94 — — — — —

1.60

2.00

2.50

1.00

3.64

1.40 —

—

Unit

mA

V

µA

V

nF nF nF

µC µs µs µs µs

V

µs µC

K/W K/W K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM800HB-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

)

A

(

C

1600

1200

OUTPUT CHARACTERISTICS

Tj=25°C

VGE=14V VGE=15V

(

TYPICAL

VGE=11V

VGE=20V

800

400

COLLECTOR CURRENT I

0

246

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

)

V

(

CE(sat)

VOLTAGE CHARACTERISTICS

8

VGE=15V

6

(

TYPICAL

4

)

VGE=13V VGE=12V

VGE=10V

VGE=9V

VGE=8V VGE=7V

)

A

(

C

TRANSFER CHARACTERISTICS

1600

VCE=10V

1200

(

TYPICAL

)

800

400

COLLECTOR CURRENT I

8

100

)

CE

(V

0

GATE-EMITTER VOLTAGE VGE (V

Tj = 25°C T

j

= 125°C

200481216

)

COLLECTOR-EMITTER SATURATION

)

V

(

CE(sat)

VOLTAGE CHARACTERISTICS

10

Tj = 25°C

8

6

(

TYPICAL

)

IC = 1600A

IC = 800A

4

2

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

400 800 1200 1600

COLLECTOR CURRENT IC (A

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

)

V

8

(

EC

(

TYPICAL

6

4

2

0

EMITTER-COLLECTOR VOLTAGE V

0 16001200800400

EMITTER CURRENT IE (A

Tj = 25°C T

)

Tj = 25°C T

j

= 125°C

j

= 125°C

)

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

020161284

)

nF

(

res

, C

oes

, C

ies

CAPACITANCE C

GATE-EMITTER VOLTAGE VGE (V

CAPACITANCE CHARACTERISTICS

3

10

7 5

3 2

2

10

7 5

3 2

1

10

7 5

3 2

0

10

–1

2310

(

TYPICAL

V

GE

C

ies, Coes res

C

5710023 5710123 5710

COLLECTOR-EMITTER VOLTAGE VCE (V

IC = 320A

)

= 0V, Tj = 25°C

: f = 100kHz : f = 1MHz

)

C

ies

C

oes

C

res

2

)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM800HB-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

(

TYPICAL

)

5 3

HALF-BRIDGE

)

2

µs

(

0

10

t

d(off)

t

d(on)

7 5

3

t

r

t

f

2

SWITCHING TIMES

–1

10

7 5

710

5

VCC = 1650V, VGE = ±15V R

G

= 2.5Ω, Tj = 125°C

Inductive load

2

23 5710

3

COLLECTOR CURRENT IC (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

3.0 VCC = 1650V, VGE = ±15V,

R

G

)

J/P

(

= 2.5Ω, Tj = 125°C,

2.5

Inductive load

(

TYPICAL

)

2.0

1.5

1.0

23 5

)

E

on

E

off

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

5

) µs

(

rr

VCC = 1650V, Tj = 125°C

3

Inductive load V

GE

= ±15V, RG = 2.5Ω

2

1

10

TYPICAL

)

I

rr

7 5

3 2

0

10

7

REVERSE RECOVERY TIME t

5

2

5

710

23 5710

t

rr

3

23 5

EMITTER CURRENT IE (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

10

VCC = 1650V, IC = 800A, V

GE

) J/P

(

= ±15V, Tj = 125°C,

Inductive load

8

(

TYPICAL

)

6

4

)

5

A

(

rr

3 2

3

10 7

5 3

2

10 7

REVERSE RECOVERY CURRENT I

5

)

E

on

0.5

SWITCHING ENERGY

0

0 400 800 1200 1600

CURRENT (A

GATE CHARGE CHARACTERISTICS

20

)

V

(

GE

16

VCC = 1650V I

C

= 800A

(

TYPICAL

)

12

8

4

GATE-EMITTER VOLTAGE V

0

GATE CHARGE QG (nC

E

rec

)

2

SWITCHING ENERGY

0

0 102030

GATE RESISTANCE (Ω

E

off

)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

Single Pulse

7 5

T

C

= 25°C

3

R

th(j – c)Q

th(j – c)

2

R

0

10

7 5

3 2

–1

10

7 5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

10

8000 1000060000 2000 4000

10

–3

)

= 0.012K/W

th(j – c)R

= 0.024K/W

10

–2

23 57 23 57 23 57

TIME (s

–1

10

)

10

0

Mar. 2003

C&H Technology CM800HB-66H User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual