C&H Technology CM800E2C-66H User Manual

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MITSUBISHI HVIGBT MODULES

CM800E2C-66H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800E2C-66H

● IC...................................................................800A

● V

CES ....................................................... 3300V

● Insulated T ype

● 1-elements in a pack (for brake)

● AISiC base plate

APPLICATION

DC choppers, Dynamic braking choppers.

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3 - M4 NUTS

CM

171

±0.25

±0.25

57

C

79.4

57

C

E

G

E

20.25

41.25

61.5

57

±0.25

CC

EE

61.5

13

6 - M8 NUTS

20

±0.25

40

140

124

8 - φ7MOUNTING HOLES

5.2

C

G
E

C

E

CIRCUIT DIAGRAM

15

40

C

E

(C)

AK(E)

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

38

28

LABEL

29.5

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM800E2C-66H

HIGH POWER SWITCHING USE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings
VCES
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

j) should not increase beyond 150°C.

VGE = 0V

CE = 0V

V
DC, T

C = 95°C

Pulse (Note 1)

Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

V

CE = VCES, VGE = 0V

IC = 80mA, VCE = 10V
V

GE = VGES, VCE = 0V

T

j = 25°C
j = 125°C

T

CE = 10V

V
V

GE = 0V
CC = 1650V, IC = 800A, VGE = 15V

V
V

CC = 1650V, IC = 800A

V

GE1 = VGE2 = 15V

R

G = 2.5Ω

I

C = 800A, VGE = 15V (Note 4)

Resistive load switching operation
I

E = 800A, VGE = 0V

I

E = 800A

die / dt = –1600A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
IF = 800A, Clamp diode part
I

F = 800A

di

f / dt = –1600A / µs, Clamp diode part

Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)

–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

Min Typ Max

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

3300

±20
800

1600

800
1600
9600

6000

1.5

Limits

—

6.04.5 7.5

—

3.80

4.00
120

12.0

3.6

5.7
—
—
—
—

2.80
—

270
—
—

0.008

3.00
—

270

—

0.008

10

0.5

4.94
—
—
—
—
—

1.60

2.00

2.50

1.00

3.64

1.40
—

0.013

0.025
—

3.90

1.40
—

0.025
—

V
V
A
A
A
A

W

°C
°C

V
N·m
N·m
N·m

kg

Unit

mA

V

µA

V

nF
nF
nF

µC
µs
µs
µs
µs

V

µs
µC

K/W
K/W
K/W

V

µs
µC

K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

)

A

(

C

1600

1200

OUTPUT CHARACTERISTICS

Tj=25°C

VGE=14V
VGE=15V

(

TYPICAL

VGE=11V

VGE=20V

800

400

COLLECTOR CURRENT I

0

246

COLLECTOR-EMITTER VOLTAGE V

)

VGE=13V
VGE=12V

VGE=10V

VGE=9V

VGE=8V
VGE=7V

)

A

(

C

COLLECTOR CURRENT I

8

100

)

CE

(V

TRANSFER CHARACTERISTICS

1600

VCE=10V

1200

800

400

0

GATE-EMITTER VOLTAGE VGE (V

MITSUBISHI HVIGBT MODULES

CM800E2C-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

(

TYPICAL

)

Tj = 25°C
T

j

= 125°C

200481216

)

COLLECTOR-EMITTER SATURATION

)

V

(

CE(sat)

VOLTAGE CHARACTERISTICS

8

VGE=15V

6

(

TYPICAL

4

2

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

0

400 800 1200 1600

COLLECTOR CURRENT IC (A

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

)

V

8

(

EC

(

TYPICAL

6

4

2

0

EMITTER-COLLECTOR VOLTAGE V

0 16001200800400

EMITTER CURRENT IE (A

)

Tj = 25°C
T

)

Tj = 25°C
T

j

= 125°C

j

= 125°C

)

COLLECTOR-EMITTER SATURATION

)

V

(

CE(sat)

VOLTAGE CHARACTERISTICS

10

Tj = 25°C

8

6

(

TYPICAL

)

IC = 1600A

IC = 800A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

020161284

)

)

nF

(

res

, C

oes

, C

ies

CAPACITANCE C

GATE-EMITTER VOLTAGE VGE (V

CAPACITANCE CHARACTERISTICS

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

3
2

0

10

–1

2310

(

TYPICAL

V

GE

C

ies, Coes
res

C

5710023 5710123 5710

COLLECTOR-EMITTER VOLTAGE VCE (V

IC = 320A

)

= 0V, Tj = 25°C

: f = 100kHz
: f = 1MHz

)

C

ies

C

oes

C

res

2

)

Mar. 2003

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM800E2C-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

(

TYPICAL

)

5
3

HALF-BRIDGE

)

2

µs

(

0

10

t

d(off)

t

d(on)

7
5

3

t

r

t

f

2

SWITCHING TIMES

–1

10

7
5

710

5

VCC = 1650V, VGE = ±15V
R

G

= 2.5Ω, Tj = 125°C

Inductive load

2

23 5710

3

COLLECTOR CURRENT IC (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

3.0
VCC = 1650V, VGE = ±15V,

R

G

)

J/P

(

= 2.5Ω, Tj = 125°C,

2.5

Inductive load

(

TYPICAL

)

2.0

1.5

1.0

23 5

)

E

on

E

off

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

5

)
(

VCC = 1650V, Tj = 125°C

µs

3

Inductive load

rr

10

GE

= ±15V, RG = 2.5Ω

V

2

1

TYPICAL

)

I

rr

7
5

3
2

0

10

7

REVERSE RECOVERY TIME t

5

2

710

5

23 5710

t

rr

3

EMITTER CURRENT IE (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

10

VCC = 1650V, IC = 800A,

GE

= ±15V, Tj = 125°C,

J/P

V
Inductive load

8

)
(

(

TYPICAL

)

6

4

23 5

)

E

on

)

5

A

(

rr

3
2

3

10
7

5
3

2

2

10
7

REVERSE RECOVERY CURRENT I

5

0.5

SWITCHING ENERGY

0

0 400 800 1200 1600

CURRENT (A

GATE CHARGE CHARACTERISTICS

20

)

V

(

GE

VCC = 1650V
I

16

C

= 800A

(

TYPICAL

)

12

8

4

GATE-EMITTER VOLTAGE V

0

GATE CHARGE QG (nC

E

rec

)

2

SWITCHING ENERGY

0

0102030

GATE RESISTANCE (Ω

E

off

)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

Single Pulse

7
5

T

C

= 25°C

3

th(j – c)Q

R

th(j – c)

2

R

0

10

7
5

3
2

–1

10

7
5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

10

8000 1000060000 2000 4000

10

–3

)

= 0.013K/W

th(j – c)R

= 0.025K/W

–2

23 57 23 57 23 57 23 57

10

–1

10

TIME (s

0

10

)

10

1

Mar. 2003