C&H Technology CM800E2C-66H User Manual

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MITSUBISHI HVIGBT MODULES

CM800E2C-66H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800E2C-66H

● IC...................................................................800A

● V

CES ....................................................... 3300V

● Insulated T ype

● 1-elements in a pack (for brake)

● AISiC base plate

APPLICATION

DC choppers, Dynamic braking choppers.

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3 - M4 NUTS

CM

171

±0.25

±0.25

57

C

79.4

57

C

E

G

E

20.25

41.25

61.5

57

±0.25

CC

EE

61.5

13

6 - M8 NUTS

20

±0.25

40

140

124

8 - φ7MOUNTING HOLES

5.2

C

G
E

C

E

CIRCUIT DIAGRAM

15

40

C

E

(C)

AK(E)

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

38

28

LABEL

29.5

Mar. 2003