C&H Technology CM800DU-12H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM800DU-12H

T - (4 TYP.)

C2E1

E2

G1

C1

E1

E2

G2

C

L

L

C

W ­(4 PLACES)

LABEL

A

F

G

HJKL

M

N

P

Q

P

R

U

V

D

X

Y

Z

C2E1 E2 C1

G1 E1 E2 G2

AA

T

C

MEASURED POINT

B

C

E

S - (3 PLACES)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.51 140.0

B 5.12 130.0

C 5.12 130.0

D 1.38 35.0

E 4.33 110.0

F 4.33 110.0

G 0.39 10.0

H 0.45 11.5

J 0.54 13.8

K 1.72 43.8

L 1.42 36.0

M 0.39 10.0

N 0.80 20.4

Dimensions Inches Millimeters

P 0.57 14.5

Q 1.57 40.0

R 2.56 65.0

S M8 M8

T 0.26 Dia. 6.5 Dia.

S 0.32 8.0

V 0.97 24.5

W M4 M4

X 0.59 15.0

Y 0.35 9.0

Z 1.02 26.0

AA 0.79 20.0

Dual IGBTMOD™
U-Series Module

800 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con­sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con­nected super-fast recovery free­wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and

thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM800DU-12H is a
600V (V
IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 800 12

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heat Sinking

), 800 Ampere Dual

CES

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM800DU-12H
Dual IGBTMOD™ U-Series Module

800 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM800DU-12H Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 800 Amperes

Peak Collector Current I

Emitter Current** (Tc = 25°C) IE 800 Amperes

Peak Emitter Current** IEM 1600* Amperes

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1500 Watts

Mounting Torque, M8 Main Terminal – 95 in-lb

Mounting Torque, M6 Mounting – 40 in-lb

G(E) Terminal, M4 – 15 in-lb

Weight – 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

j(max)

1600* Amperes

rating.

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

VGE = V

GES

IC = 80mA, VCE = 10V 4.5 6 7.5 Volts

GE(th)

IC = 800A, VGE = 15V, Tj = 25°C – 2.5 3.15 Volts

CE(sat)

VCE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 800A, VGE = 15V, Tj = 125°C – 2.75 – Volts

Total Gate Charge QG VCC = 300V, IC = 800A, VGE = 15V – 1600 – nC

Emitter-Collector Voltage** VEC IE = 800A, VGE = 0V – – 2.6 Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Load Switching Operation – – 300 ns

Diode Reverse Recovery Time** trr IE = 800A, diE/dt = -1600A/μs – – 160 ns

Diode Reverse Recovery Charge** Qrr IE = 800A, diE/dt = -1600A/μs – 1.92 – µC

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

– – 70.4 nf

ies

VCE = 10V, VGE = 0V – – 38.4 nf

oes

– – 10.4 nf

res

VCC = 300V, IC = 800A, – – 400 ns

d(on)

= V

GE1

RG = 3.1Ω, Resistive – – 500 ns

d(off)

= 15V, – – 2000 ns

GE2

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

2

2

Q Per IGBT 1/2 Module – – 0.083 °C/W

th(j-c)

R Per FWDi 1/2 Module – – 0.13 °C/W

th(j-c)

Per Module, Thermal Grease Applied – 0.010 – °C/W

th(c-f)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

1200

400

0

VGE = 20V

14

15

20

12

13

11

8

Tj = 25

o

C

800

1600

10

9

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

0 4 8 12 16 20

1600

1200

800

400

0

VCE = 10V

Tj = 25°C
Tj = 125°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 400 800 1200 1600

4

3

2

1

0

VGE = 15V

Tj = 25°C
Tj = 125°C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat

)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

0 4 8 12 16 2

0

8

6

4

2

0

Tj = 25°C

IC = 320A

IC = 1600A

IC = 800A

.5 1.0 1.5 2.0 3.02.5

10

1

10

2

10

3

EMITTER-COLLECTOR VOLTAGE,

VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

4

EMITTER CURRENT, I

E

, (AMPERES)

Tj = 25°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

2

10

1

10

0

10

-1

VGE = 0V
f = 1MHz

10

1

C

oes

C

res

C

ies

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

3

10

2

10

1

t

d(off)

t

d(on)

t

r

VCC = 300V
VGE = ±15V
RG = 3.1 Ω
Tj = 125°C

t

f

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

3

10

2

10

1

t

rr

I

rr

di/dt = -1600A/µsec
Tj = 25°C

10

2

10

1

10

0

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 500 15001000

16

12

8

4

0

25002000

VCC = 300V

VCC = 200V

IC = 400A

CM800DU-12H
Dual IGBTMOD™ U-Series Module

800 Amperes/600 Volts

3

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25°C
Per Unit Base = R

th(j-c)

= 0.063°C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25°C
Per Unit Base = R

th(j-c)

= 0.13 °C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

CM800DU-12H
Dual IGBTMOD™ U-Series Module

800 Amperes/600 Volts

4

4