C&H Technology CM75TX-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75TX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

AE

DETAIL "A"

AJ

AH

AG

DETAIL "B"

2

A
E

F

G

K

KQ

JMMM

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

54

N

K

55

(4 PLACES)

K

56

57

L

58

59

K

60

K

61

V

12345678910111213141516171819202122

W

U

X

P(54~56)

N(59~61)

Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,
however, all three pins should be used for external wiring.

LHLLLL

UP(1)

G

E

UP(2)

U(48~50) V(42~44) W(36~38)

G

UN(5)

K

K

D

DETAIL "A"

K

DETAIL "B"

VP(9)

G

E

VP(10)

G

VN(13)

K

K

30

K

29

K

28

27

R B

L

26

25

K

24

K

23

KKKKKK

Tolerance Otherwise Specified (mm)

Y

WP(17)

G

E

WP(18)

WN(21)

G

EWN(22)EVN(14)EUN(6)

AD

K

AC

AA

AB

C

Z

S

P

AH

T

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

P1(28~30)

TH

TH1
(31)

(32)

N1(23~25)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.9 99.0
G 3.72 94.5
H 0.59 15.0
J 0.96 24.52
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 0.30 7.75
R 1.97±0.02 50.0±0.5
S 2.26 57.5

Dimensions Inches Millimeters

U 0.16 4.06
V 0.46 11.66
W 0.14 3.75
X 0.14 3.5
Y 0.03 0.8
Z 0.28 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.03 0.65
AD 0.05 1.15
AE 0.29 7.4
AF 0.047 1.2
AG 0.49 12.5
AH 0.12 3.0
AJ 0.17 Dia. 4.3 Dia.
AK 0.102 Dia. 2.6 Dia.
AL 0.088 Dia. 2.25 Dia.

T 0.165 4.2

Six IGBTMOD™
NX-S Series Module

75 Amperes/1200 Volts

AF

AK
AL

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM75TX-24S is a 1200V (V
75 Ampere Six IGBTMOD™ Power
Module.

Type Current Rating
Amperes Volts (x 50)

CM 75 24

CE(sat)

Free-Wheel Diode

Heat Sinking

V

CES

CES

),

106/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75TX-24S
Six IGBTMOD™ NX-S Series Module

75 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 122°C)

*2,*3

IC 75 Amperes

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*3

P

*2,*3

I

Emitter Current (Pulse)*4 I

1200 Volts

CES

±20 Volts

GES

150 Amperes

CRM

600 Watts

tot

*1

75 Amperes

E

*1

150 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T

j(max)

) rating.

j(max)

rating.

0 0

19.9

28.4

Each mark points to the center position of each chip.

Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

20.6033.1

52 51 50 49 48 47 46 45 44 4342 41 40 39 38 37 36 35 34 33 32 31

53

Di

54

UP

55

56

Tr

57

UP

58

59

60

61

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

51.6

64.1

82.6

96.1

104.5

Di

Di

VP

UN

Tr

Tr

VP

UN

Di

Di

WP

VN

Tr

Tr

WP

VN

30

Di

29

WN

Th

28

27

Tr

26

WN

25

24

23

LABEL SIDE

21.6

24.1

30.0

2 06/11 Rev. 2