C&H Technology CM75TU-12H User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75TU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B

C

D

Measured

GuP

EuP

TC

Point

5 - M4 NUTS

P

GuP

EuP

U

G

E

GvP

EvP

GwP

EwP

F

EERHH

uvw

J J

EEE

HH

GvP

EvP

V

G

GuN
EuN

GvN
EvN

GwP

EwP

W

S 4 - Mounting
Holes

T

C

Measured
Point

GwN
EwN

K

N

0.110 - 0.5 Tab

P

Q

K

L

M

Six IGBTMOD™
U-Series Module

75 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

GuN
EuN

N

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.02 102.0
B 3.15±0.01 80.0±0.25
C 3.58 91.0
D 2.91±0.01 74.0±0.25
E 0.43 11.0
F 0.79 20.0
G 0.39 10.0
H 0.75 19.1

J 0.79 20.0

GvN
EvN

Dimensions Inches Millimeters

GwN
EwN

K 0.05 1.25

L 0.74 18.7
M 1.55 39.3
N 0.12 3.05

P 0.32 8.1
Q 1.02 26.0
R 0.47 11.85

S 0.22 Dia. 5.5 Dia.

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM75TU-12H is a
600V (V

), 75 Ampere Six-

CES

IGBT IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 75 12

CES

77

77

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75TU-12H
Six IGBTMOD™ U-Series Module

75 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75TU-12H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M4 Main Ter minal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

310 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts

IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

IC = 75A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 300V, IC = 75A, VGE = 15V – 150 – nC

IE = 75A, VGE = 0V – – 2.6 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 3.6 nf

VCC = 300V, IC = 75A, – – 100 ns

V

= V

GE1

= 15V, – – 250 ns

GE2

RG = 8.3V, Resistive – – 200 ns

Load Switching Operation – – 300 ns
IE = 75A, diE/dt = -150A/µs––160ns
IE = 75A, diE/dt = -150A/µs – 0.18 – µC

– – 6.6 nf

––1nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

78

78

Q Per IGBT 1/6 Module – – 0.4 °C/W

th(j-c)

D Per Free-Wheel Diode 1/6 Module – – 0.9 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.018 – °C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75TU-12H
Six IGBTMOD™ U-Series Module

75 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

150

125

100

, (AMPERES)

C

o

Tj = 25

VGE = 20V

C

75

50

25

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

15

14

COLLECTOR-EMITTER

(TYPICAL)

13

12

11

10

9
8

IC = 150A

IC = 75A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

VCC = 300V
V

GE

= 8.3 Ω

R

G

T

= 125°C

j

0

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

= ±15V

(TYPICAL)

t

d(off)

t

d(on)

IC = 30A

t

f

t

r

1

10

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

150

125

100

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C

= 125°C

T

j

SATURATION VOLTAGE CHARACTERISTICS

5

)

4

, (VOLTS

CE(sat)

3

75

50

25

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

1.0 1.5 2.0 2.5 3.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -150A/µsec
T

= 25°C

j

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

1

2

10

10

0

10

(TYPICAL)

, (VOLTS)

EC

(TYPICAL)

t

rr

I

rr

1

EMITTER CURRENT, IE, (AMPERES)

10

10

10

10

2

10

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 40 80 120

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

1

10

, (nF)

res

0

, C

10

oes

, C

ies

-1

10

CAPACITANCE, C

VGE = 0V
f = 1MHz

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

2

20

IC = 75A

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

0

0 50 100

(TYPICAL)

0

10

10

GATE CHARGE, V

VCC = 200V

VCC = 300V

GATE CHARGE, QG, (nC)

160

CE

C

ies

C

oes

C

res

1

GE

10

1500 200

2

79

79

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75TU-12H
Six IGBTMOD™ U-Series Module

75 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.4°C/W

10

0

-4

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.9°C/W

10

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

80

80