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CM75TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
S - NUTS (5 TYP)
T
MEASURING
POINT
W - THICK x X - WIDE
E B
C
TAB (12 PLACES)
C
P
GUP
RTC
EUP
U
GUN
RTC RTC
EUN
N
GUP EUP
L
J
K
CM
N
P
GVP
EVPLGWP
N
GUN
EUN
U
LL NNAL
GVP
EVP
GVN
EVN
N L
GVN EVN EWN
V
J
J
D
RTC
V
K
R
EWP
GWN
W
GWP
EWP
GWN
EWN
M
RTC
W
RTC
T (4 TYP.)
P
Q
V
H
G
F
A
TC
MEASURING
POINT
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02 102.0
B 3.58 91.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.15± 0.01 80.0± 0.25
E 2.91± 0.01 74.0± 0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1
J 0.79 20.0
K 0.39 10.0
L 0.43 11.0
Dimensions Inches Millimeters
M 0.47 11.85
N 0.75 19.1
P 0.74 18.7
Q 1.55 39.3
R 0.05 1.25
SM 4 M 4
T 0.22 Dia. 5.5 Dia.
U 0.02 0.5
V 0.12 3.05
W 0.02 0.5
X 0.110 2.79
Trench Gate Design
Six IGBTMOD™
75 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-12F is a
600V (V
IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 75 12
CE(sat)
Free-Wheel Diode
Heat Sinking
), 75 Ampere Six-
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 ° C unless otherwise specified
Ratings Symbol CM75TU-12F Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150° C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M4 Main Terminal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
± 20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
290 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G
EC
VCE = V
VGE = V
, VGE = 0V ––1m A
CES
, VCE = 0V ––20 µA
CES
IC = 7.5mA, VCE = 10V 5 6 7 Volts
IC = 75A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts
IC = 75A, VGE = 15V, Tj = 125°C – 1.6 – Volts
VCC = 300V, IC = 75A, VGE = 15V – 465 – nC
IE = 75A, VGE = 0V ––2.6 Volts
rating.
j(max)
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
ies
oes
res
r
f
rr
VCE = 10V, VGE = 0V ––1.4 nf
VCC = 300V, IC = 75A, –– 100 ns
V
= V
GE1
= 15V, ––80 ns
GE2
RG = 8.3⍀, –– 300 ns
Inductive Load –– 250 ns
Switching Operation –– 150 ns
rr
IE = 75A – 1.4 – µC
––20 nf
––0.75 nf
Thermal and Mechanical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Q Per IGBT 1/6 Module, Tc Reference – 0.43 °C/W
th(j-c)
Point per Outline Drawing
D Per FWDi 1/6 Module, Tc Reference ––0.9 ° C/W
th(j-c)
Point per Outline Drawing
'Q Per IGBT 1/6 Module, 0.29 °C/W
th(j-c)
Tc Reference Point Under Chip
th(c-f)
Per Module, Thermal Grease Applied – 0.018 – °C/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F
Trench Gate Design Six IGBTMOD™
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
150
Tj = 25
120
, (AMPERES)
C
90
60
30
COLLECTOR CURRENT, I
0
01 2 34
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FORWARD CHARACTERISTICS
3
10
11
o
C
10
15
VGE = 20V
8
7.5
FREE-WHEEL DIODE
(TYPICAL)
9.5
9
8.5
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
2
10
, (ns)
rr
1
10
(TYPICAL)
t
rr
I
rr
VCC = 300V
V
= ± 15V
GE
R
= 8.3 Ω
1
10
G
T
= 25°C
j
Inductive Load
REVERSE RECOVERY TIME, t
0
10
0
10
EMITTER CURRENT, IE, (AMPERES)
SATURATION VOLTAGE CHARACTERISTICS
3
)
, (VOLTS
2
CE(sat)
1
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
2
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
1
10
8
4
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
0
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25° C
= 125°C
T
j
0 30 60 90 120
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
CE
VGE = 0V
C
ies
C
oes
C
res
-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
1
10
GE
IC = 75A
VCC = 200V
VCC = 300V
100 200 300 400
0
GATE CHARGE, QG, (nC)
500 600
SATURATION VOLTAGE CHARACTERISTICS
5
4
, (VOLTS)
CE(sat)
3
COLLECTOR-EMITTER
Tj = 25° C
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
150
10
700
2
06 1 0 81 4 12 18 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING CHARACTERISTICS
3
10
t
d(off)
t
2
10
1
10
SWITCHING TIME, (ns)
0
10
10
10-310
1
th(j-c)
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
f
t
d(on)
t
r
0
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-2
Per Unit Base
R
= 0.43° C/W (IGBT)
th(j-c)
R
= 0.9° C/W (FWDi)
th(j-c)
Single Pulse
T
= 25° C
C
(TYPICAL)
IC = 150A
IC = 75A
IC = 30A
HALF-BRIDGE
(TYPICAL)
1
10
(IGBT & FWDi)
-1
10
-5
10
TIME, (s)
VCC = 300V
V
= ± 15V
GE
R
= 8.3 Ω
G
T
= 125°C
j
Inductive Load
2
10
0
10
-4
10
3
10
1
10
-1
10
-2
10
-3
10
-3
10
4
4