C&H Technology CM75TU-12F User Manual

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CM75TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
S - NUTS (5 TYP)
T
MEASURING
POINT
W - THICK x X - WIDE
EB
C
TAB (12 PLACES)
C
P
GUP
RTC
EUP
U
GUN
RTC RTC
EUN
N
GUP EUP
L
J
K
CM
N
P
GVP
EVPLGWP
N
GUN
EUN
U
LLNNAL
GVP
EVP
GVN
EVN
NL
GVN EVN EWN
V
J
J
D
RTC
V
K
R
EWP
GWN
W
GWP
EWP
GWN
EWN
M
RTC
W
RTC
T (4 TYP.)
P
Q
V
H
G
F
A
TC MEASURING POINT
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02 102.0 B 3.58 91.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.15±0.01 80.0±0.25 E 2.91±0.01 74.0±0.25 F 0.16 4.0 G 1.02 26.0 H 0.31 8.1
J 0.79 20.0 K 0.39 10.0 L 0.43 11.0
Dimensions Inches Millimeters
M 0.47 11.85 N 0.75 19.1
P 0.74 18.7 Q 1.55 39.3 R 0.05 1.25
SM4 M4
T 0.22 Dia. 5.5 Dia. U 0.02 0.5
V 0.12 3.05 W 0.02 0.5
X 0.110 2.79
Trench Gate Design Six IGBTMOD™
75 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse­connected super-fast recover y free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
Isolated Baseplate for Easy
Applications:
AC Motor ControlUPSBattery Powered Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM75TU-12F is a 600V (V IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 75 12
CE(sat)
Free-Wheel Diode Heat Sinking
), 75 Ampere Six-
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F Trench Gate Design Six IGBTMOD
75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM75TU-12F Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** I Peak Emitter Current** I Maximum Collector Dissipation (Tj < 150°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M4 Main Terminal 15 in-lb Mounting Torque, M5 Mounting 31 in-lb Weight 570 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C 600 Volts ±20 Volts
75 Amperes
150* Amperes
75 Amperes
150* Amperes
290 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Voltage I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
Total Gate Charge Q Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES GES
GE(th)
CE(sat)
G
EC
VCE = V VGE = V
, VGE = 0V ––1mA
CES
, VCE = 0V ––20 µA
CES
IC = 7.5mA, VCE = 10V 5 6 7 Volts
IC = 75A, VGE = 15V, Tj = 25°C 1.6 2.2 Volts
IC = 75A, VGE = 15V, Tj = 125°C 1.6 Volts
VCC = 300V, IC = 75A, VGE = 15V 465 nC
IE = 75A, VGE = 0V ––2.6 Volts
rating.
j(max)
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F Trench Gate Design Six IGBTMOD
75 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Inductive Turn-on Delay Time t
d(on)
Load Rise Time t Switch Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time** t Diode Reverse Recovery Charge** Q
ies oes res
r
f
rr
VCE = 10V, VGE = 0V ––1.4 nf
VCC = 300V, IC = 75A, ––100 ns
V
= V
GE1
= 15V, ––80 ns
GE2
RG = 8.3⍀, ––300 ns
Inductive Load ––250 ns
Switching Operation ––150 ns
rr
IE = 75A 1.4 µC
––20 nf
––0.75 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Q Per IGBT 1/6 Module, Tc Reference 0.43 °C/W
th(j-c)
Point per Outline Drawing
D Per FWDi 1/6 Module, Tc Reference ––0.9 °C/W
th(j-c)
Point per Outline Drawing
'Q Per IGBT 1/6 Module, 0.29 °C/W
th(j-c)
Tc Reference Point Under Chip
th(c-f)
Per Module, Thermal Grease Applied 0.018 °C/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12F Trench Gate Design Six IGBTMOD
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
150
Tj = 25
120
, (AMPERES)
C
90
60
30
COLLECTOR CURRENT, I
0
01 2 34
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FORWARD CHARACTERISTICS
3
10
11
o
C
10
15
VGE = 20V
8
7.5
FREE-WHEEL DIODE
(TYPICAL)
9.5
9
8.5
Tj = 25°C
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
2
10
, (ns)
rr
1
10
(TYPICAL)
t
rr
I
rr
VCC = 300V V
= ±15V
GE
R
= 8.3
1
10
G
T
= 25°C
j
Inductive Load
REVERSE RECOVERY TIME, t
0
10
0
10
EMITTER CURRENT, IE, (AMPERES)
SATURATION VOLTAGE CHARACTERISTICS
3
)
, (VOLTS
2
CE(sat)
1
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
2
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
1
10
8
4
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
0
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
0 30 60 90 120
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
CE
VGE = 0V
C
ies
C
oes
C
res
-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
1
10
GE
IC = 75A
VCC = 200V
VCC = 300V
100 200 300 400
0
GATE CHARGE, QG, (nC)
500 600
SATURATION VOLTAGE CHARACTERISTICS
5
4
, (VOLTS)
CE(sat)
3
COLLECTOR-EMITTER
Tj = 25°C
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
150
10
700
2
06 1081412 1816 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING CHARACTERISTICS
3
10
t
d(off)
t
2
10
1
10
SWITCHING TIME, (ns)
0
10
10
10-310
1
th(j-c)
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
f
t
d(on)
t
r
0
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-2
Per Unit Base R
= 0.43°C/W (IGBT)
th(j-c)
R
= 0.9°C/W (FWDi)
th(j-c)
Single Pulse T
= 25°C
C
(TYPICAL)
IC = 150A
IC = 75A
IC = 30A
HALF-BRIDGE
(TYPICAL)
1
10
(IGBT & FWDi)
-1
10
-5
10
TIME, (s)
VCC = 300V V
= ±15V
GE
R
= 8.3
G
T
= 125°C
j
Inductive Load
2
10
0
10
-4
10
3
10
1
10
-1
10
-2
10
-3
10
-3
10
4
4
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