C&H Technology CM75TL-12NF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75TL-12NF

A

E

D

H JGJ

F

C

V

L

M

N

W

X

B

K

K

K

Q

Y

P

K

K

K

K

S

R

T

U

R R

8 1 1 1 1

P

NC

NC

NC

B

UP-1

UP-2

CN-5

CN-6

U

VP-1

VP-2

CN-3

CN-4

V

WP-1

WP-2

CN-1

CN-2

W

CN-7

CN-8

N

AA

CN UP VP WP

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AB

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Six IGBTMOD™
NF-Series Module

75 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.72 120.0

B 2.17 55.0

C 1.39 35.0

D 4.17±0.02 106.0±0.5

E 0.43 11.0

F 0.28 7.0

G 0.54 13.62

H 1.61 40.78

J 0.67 17.0

K 0.47 12.0

L M5 M5

M 0.22 Dia. Dia. 5.5

Housing Types (J.S.T. Mfg. Co. Ltd.)

AA – B8P-VH-FB-B
AB – B2P-VH-FB-B

Dimensions Inches Millimeters

N 1.23 32.0

P 0.47 11.75

Q 0.53 13.5

R 0.91 23.0

S 0.87 22.0

T 0.76 19.75

V 0.87+0.04/-0.02 22.0+1.0/-0.5

W 0.91 23.2

U 0.42 10.75

X 0.63 16.0

Y 0.12 3.0

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e. CM75TL-12NF
is a 600V (V

), 75 Ampere Six-

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 75 12

V

CES

110/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75TL-12NF
Six IGBTMOD™ NF-Series Module

75 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM75TL-12NF Units

Power Device Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

Collector Current (TC = 102°C)* IC 75 Amperes

Peak Collector Current (Tj ≤ 150°C) ICM 150** Amperes

Emitter Current*** IE 75 Amperes

Peak Emitter Current*** IEM 150** Amperes

Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 430 Watts

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M5 Main Terminal Screws — 31 in-lb

Module Weight (Typical) — 350 Grams

Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V

2500 Volts

ISO

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

V

CES

I

GE(th)

V

GES

IC = 75A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts

CE(sat)

= V

CE

= 7.5mA, VCE = 10V 6 7 8 Volts

C

GE

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

IC = 75A, VGE = 15V, Tj = 125°C — 1.7 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG V

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr V

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf R

— — 11.3 nf

ies

V

oes

— — 0.45 nf

res

CC

— — 120 ns

d(on)

V

d(off)

= 10V, VGE = 0V — — 1.4 nf

CE

= 300V, IC = 75A, VGE = 15V — 300 — nC

= 300V, IC = 75A, — — 100 ns

CC

= V

GE1

= 8.3Ω, IE = 75A, — — 300 ns

G

= 15V, — — 300 ns

GE2

Reverse Recovery Time*** trr Inductive Load Switching Operation — — 100 ns

Reverse Recovery Charge*** Qrr — 1.2 — µC

Emitter-Collector Voltage*** VEC I

*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

= 75A, VGE = 0V — — 2.8 Volts

E

rating.

j(max)

2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

0 1 3 42 5

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6 8 10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 150A

IC = 75A

IC = 30A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

0

VGE = 20V

10

11

12

13

15

9

8

Tj = 25°C

150

50

100

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0

2

1

0

15050 100

VGE = 15V

Tj = 25°C
T

j

= 125°C

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

0

10

1

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 300V
V

GE

= ±15V

R

G

= 8.3Ω

T

j

= 125°C

Inductive Load

t

f

10

2

CM75TL-12NF
Six IGBTMOD™ NF-Series Module

75 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case* R

Thermal Resistance, Junction to Case* R

Contact Thermal Resistance R

External Gate Resistance RG 8.3 — 83 Ω

*TC, Tf measured point is just under the chips.

Q Per IGBT 1/6 Module — — 0.29 °C/W

th(j-c)

D Per FWDi 1/6 Module — — 0.51 °C/W

th(j-c)

Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W

th(c-f)

310/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.29°C/W
(IGBT)
R

th(j-c)

=

0.51°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

VCC = 300V
V

GE

= ±15V

I

C

= 75A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

SW(on)

E

SW(off)

GATE RESISTANCE, R

G

, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

0

10

0

10

1

10

-1

10

-2

VCC = 300V
V

GE

= ±15V

I

E

= 75A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

0

10

0

10

1

10

-1

10

-2

VCC = 300V
V

GE

= ±15V

R

G

= 8.3Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

E

rr

E

rr

GATE CHARGE, Q

G

, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

100 200 300 500400

VCC = 300V

VCC = 200V

IC = 75A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

0

10

1

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

10

2

VCC = 300V
V

GE

= ±15V

R

G

= 8.3Ω

T

j

= 25°C

Inductive Load

I

rr

t

rr

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

1

10

0

10

1

10

0

10

-1

VCC = 300V
V

GE

= ±15V

R

G

= 8.3Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

2

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

E

SW(on)

E

SW(off)

CM75TL-12NF
Six IGBTMOD™ NF-Series Module

75 Amperes/600 Volts

4 10/10 Rev. 1