C&H Technology CM75RX-24S User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM75RX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
AN
AQ
AX
AL
TH2
(10)
AY
DETAIL "B"
AR
AT
AL
AL
AW
AP
12
11
10
N M L K B
9
8
7
6
5
AB
(6 PLACES)
DETAIL "B"
TH1
(11)
NTC
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
The tolerance of size between
terminals is assumed to ±0.4
AZ
AH
AS
AD
AC
AU
DETAIL "A"
AH
AL
AK
R
T
S
R
U
V
AF
AG
C
BA
AE
AJ
H
J
QR
P
Q
P
H
X Y Z Z
P(35)
UP(34)
G
E
G
UP(33)
UN(30)
B(4)
GB(6)
EB(5)
N(36)
35
36
J
U(1) V(2) W(3)
AM
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
AA(4 PLACES)
1 2 3 4
P W
VP(26)
G
E
VP(25)
G
VN(22)
ALAL
ALALAL
AMAMAM
AM
A
D
E
F
G
DETAIL "A"
RQ
WP(18)
G
E
WP(17)
G
WN(14)
EWN(13)EVN(21)EUN(29)
Z
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.39 136.9
B 3.03 77.1
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.
Dimensions Inches Millimeters
AB M5 M5
AC 0.12 3.0
AD 0.51 13.0
AE 0.102 Dia. 2.6 Dia.
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.088 Dia. 2.25 Dia.
AK 0.59 15.00
AL 0.15 3.81
AM 0.45 11.43
AN 0.14 3.5
AP 0.75 19.05
AQ 0.05 1.2
AR 0.03 0.8
AS 0.27 7.0
AT 0.77 19.68
AU 0.49 12.5
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.17 Dia. 4.3 Dia.
Six IGBTMOD™ + Brake
NX-S Series Module
75 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with freewheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM75RX-24S is a 1200V (V
75 Ampere Six-IGBTMOD™ +
Brake Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 75 24
CE(sat)
Free-Wheel Diode
Heat Sinking
V
CES
CES
),
106/11 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
75 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
1200 Volts
CES
±20 Volts
GES
Collector Current (DC, TC = 122°C)*2 IC 75 Amperes
Collector Current (Pulse)*3 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*4
P
*2,*4
I
Emitter Current (Pulse)*3 I
150 Amperes
CRM
600 Watts
tot
*1
75 Amperes
E
*1
150 Amperes
ERM
Brake Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)*2 IC 50 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Repetitive Peak Reverse Voltage (VGE = 0V) V
Forward Current (TC = 25°C)
*2,*4
I
Forward Current (Pulse)*3 I
1200 Volts
CES
±20 Volts
GES
100 Amperes
CRM
425 Watts
tot
1200 Volts
RRM
*1
50 Amperes
F
*1
100 Amperes
FRM
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
j(max)
j(max)
) rating.
rating.
LABEL SIDE
0 0
20.0
21.0
26.8
27.8
28.5
29.5
35.3
36.3
175 °C
j(max)
125 °C
C(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
23.0
34.1045.2
56.4
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
Tr
35
36
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Th: NTC Thermistor
Tr
UP
VP
Tr
Di
UP
Tr
UN
Di
VN
VP
Di
Di
UN
VN
1 2 3 4
91.0
79.9
99.4
Di
Tr
Br
WP
Tr
Th
Di
WN
WP
Di
WN
10 1.6
105.2
18.6
12
20.0
11
10
26.8
9
28.5
8
35.3
7
Tr
6
Br
40.5
5
2 06/11 Rev. 3
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