C&H Technology CM75MX-12A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75MX-12A

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

TH2
(29)

AL

E

AM

S(31)

AJ

DETAIL "A"

AN

Y

DETAIL "B"

TH
(28)

AD

X

R

(1-2)

A

E

F

J

L

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

W

54

K

55

56

V

57

K

58

59

V

60

K

61

12345678910111213141516171819202122

T

LLLLL

U

H

P(52-53)

T

S

(9-10)

(5-6)

ConvDi

N(57-58)

G

M M

KKKK

D

DETAIL "A"

P1(54-55)

ClampDi FWDi

B(24-25)

GB(35)

N1(60-61)

L

K

DETAIL "B"

KKKKKK

GUP(49)

ESUP(48)

U(13-14)

GUN(34)

K

K

K

Y

30

29

K

28

27

L

26

25

K

24

23

GVP(44)

ESVP(43)

V(17-18 )W(21-22)

GVN(33)

AF

AE

QMS

R B P

N (4 PLACES)

GWP(39)

E

GWN(32)

X

SWP(38)

AC

AA

AB

AG

K

AH

C

Z

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.79 121.7
B 2.44 62.0
C 0.51 13.0
D 4.49 114.05
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.16 4.06
J 0.51 13.09
K 0.15 3.81
L 0.45 11.43
M 0.6 15.24
N 0.22 Dia. 5.5 Dia.
P 2.13 54.2
Q 1.53 39.0
R 1.97±0.02 50.0±0.5
S 2.26 57.5
T 0.30 7.75
U 0.59 15.0

Dimensions Inches Millimeters

V 0.3 7.62
W 0.46 11.66
X 0.16 4.2
Y 0.08 Dia. 2.1 Dia.
Z 0.27 7.0
AA 0.81 20.5
AB 0.67 17.0
AC 0.12 3.0
AD 0.14 3.5
AE 0.03 0.8
AF 0.15 3.75
AG 0.05 1.15
AH 0.025 0.65
AJ 0.29 7.4
AK 0.047 1.2
AL 0.49 12.5
AM 0.06 1.5
AN 0.17 Dia. 4.3 Dia.
AP 0.10 Dia. 2.5 Dia.

NX-Series CIB Module

(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

AK

AP

1

Description:

CIBs are low profile and thermally
efficient. Each module consists of
a three-phase diode converter sec­tion, a three-phase inverter section
and a brake circuit. A thermistor is
included in the package for sens­ing the baseplate temperature. 5th
Generation CSTBT chips yield low
loss.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM75MX-12A is a 600V (V
75 Ampere CIB Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 75 12

CES

V

CES

),

1Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

Chip Location (Top View)

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM75MX-12A Units

Inverter Part IGBT/FWDi

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 70°C)

*2,*4

IC 75 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse)*3 I

600 Volts

CES

±20 Volts

GES

150 Amperes

CRM

280 Watts

tot

*1

75 Amperes

E

*1

150 Amperes

ERM

Brake Part IGBT/ClampDi

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 97°C)

*2,*4

IC 50 Amperes

Collector Current (Pulse)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage V

Forward Current (TC = 25°C)*2 IF 50 Amperes

Forward Current (Pulse)*3 I

600 Volts

CES

±20 Volts

GES

100 Amperes

CRM

280 Watts

tot

600 Volts

RRM

100 Amperes

FRM

Converter Part ConvDi

Repetitive Peak Reverse Voltage V

Recommended AC Input Voltage Ea 220 Volts

DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)

Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) I

Current Square Time (Value for One Cycle of Surge Current) I2t 2340 A2s

Module

Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) V

Junction Temperature Tj -40 ~ +150 °C

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate
and the heatsink side just under the chips. Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

800 Volts

RRM

*2,*4

IO 75 Amperes

750 Amperes

FSM

2500 Volts

ISO

-40 ~ +125 °C

stg

j(max)

) rating.

j(max)

rating.

IGBT FWDi Converter Diode NTC Thermistor

29.5

39.9

26.5

29.5

42.0

0

25.5

27.6

34.7

41.2

42.9

00

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

54

55

56

57

58

59

60

61

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

RN

RP SP TP

37.0

26.6

50.3

TNSN

UP

UN

UP

47.4

Dimensions in mm (Tolerance: ±1mm)

65.5

UN

64.2

74.6

71.0

WP

VP

Br

VP

V

77.8

81.4

73.0

84.6

VN

N

86.1

89.6

95.5

10 1.2

98.2

Br

Th

WN

WP

WN

97.9

91.4

0

30

1 7.8

29

28

27.1

27

26

33.6

35.2

25

24

23

2 Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

Tj = 125°C, IC = 75A, VGE = 15V*5 — 1.9 — Volts

IC = 75A, VGE = 15V, Chip*5 — 1.6 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V — 200 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr VCC = 300V, IC = 75A, VGE = ±15V, — — 100 ns

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf — — 600 ns

Emitter-Collector Voltage V

Tj = 125°C, IE = 75A, VGE = 0V*5 — 1.95 — Volts

IE = 75A, VGE = 0V, Chip — 1.9 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Internal Gate Resistance rg TC = 25°C, Per Switch — 0 — Ω

External Gate Resistance RG 8.0 — 83 Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 7.5mA, VCE = 10V 5 6 7 Volts

GE(th)

Tj = 25°C, IC = 75A, VGE = 15V*5 — 1.7 2.1 Volts

CE(sat)

— — 7.5 nF

ies

VCE = 10V, VGE = 0V — — 1.0 nF

oes

— — 0.3 nF

res

— — 100 ns

d(on)

RG = 8.2Ω, Inductive Load — — 300 ns

d(off)

*1

Tj = 25°C, IE = 75A, VGE = 0V*5 — 2.0 2.8 Volts

EC

*1

VCC = 300V, IE = 75A, VGE = ±15V — — 200 ns

rr

*1

RG = 8.2Ω, Inductive Load — 1.8 — µC

rr

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

3Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

Chip Location (Top View)

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Brake Part IGBT/ClampDi

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

Tj = 125°C, IC = 50A, VGE = 15V*5 — 1.9 — Volts

IC = 50A, VGE = 15V, Chip — 1.6 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 300V, IC = 50A, VGE = 15V — 200 — nC

Internal Gate Resistance rg TC = 25°C — 0 — Ω

Repetitive Reverse Current I

Forward Voltage Drop VF Tj = 25°C, IF = 50A*5 — 2.0 2.8 Volts

Tj = 125°C, IF = 50A*5 — 1.95 — Volts

IF = 50A, Chip — 1.9 — Volts

External Gate Resistance RG 13 — 125 Ω

VCE = V

CES

VGE = V

GES

IC = 5mA, VCE = 0V 5 6 7 Volts

GE(th)

Tj = 25°C, IC = 50A, VGE = 15V*5 — 1.7 2.1 Volts

CE(sat)

— — 9.3 nF

ies

VCE = 10V, VGE = 0V — — 1.0 nF

oes

— — 0.3 nF

res

VR = V

RRM

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

— — 1.0 mA

RRM

Converter Part

Repetitive Peak Reverse Current I

Forward Voltage Drop VF IF = 75A*5 — 1.2 1.6 Volts

NTC Thermistor Part

Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R R

B Constant B

Power Dissipation P25 TC = 25°C*4 — — 10 mW

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

*6 B
R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]

(25/50)

= In(

R

25

)/( 1 –

50 T25 T50

1

VR = V

RRM

= 493Ω, TC = 100°C*4 -7.3 — +7.8 %

100

Approximate by Equation*6 — 3375 — K

(25/50)

)

, Tj = 150°C — — 20 mA

RRM

IGBT FWDi Converter Diode NTC Thermistor

95.5

29.5

39.9

50.3

26.5

29.5

42.0

0

25.5

34.7

42.9

41.2

65.5

00

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

54

55

56

27.6

57

58

59

60

61

RN

RP SP TP

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

37.0

26.6

71.0

TNSN

UP

UN

Br

UP

VP

UN

47.4

64.2

Dimensions in mm (Tolerance: ±1mm)

73.0

10 1.2

89.6

98.2

74.6

84.6

Br

30

WP

VP

VN

WP

N

V

77.8

81.4

91.4

86.1

1 7.8

29

Th

28

27.1

27

WN

26

33.6

25

24

23

WN

97.9

0

35.2

4 Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

Chip Location (Top View)

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

Thermal Grease Applied

Q Per Inverter IGBT*4 — — 0.44 °C/W

th(j-c)

D Per Inverter FWDi*4 — — 0.85 °C/W

th(j-c)

Q Brake IGBT*4 — — 0.44 °C/W

th(j-c)

D Brake ClampDi*4 — — 0.85 °C/W

th(j-c)

D Per ConvDi*4 — — 0.24 °C/W

th(j-c)

Case to Heatsink, Per 1 Module — 0.015 — °C/W

th(c-s)

*4,*7

Mechanical Characteristics

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Mounting Torque, M5 Mounting Screws — 31 in-lb

Module Weight (Typical) — 270 Grams

Isolation Voltage, (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) V

Flatness of Baseplate*8 ec ±0 to +100 µm

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

– : CONCAVE

Y

MOUNTING

SIDE

X

– : CONCAVE

+ : CONVEX

+ : CONVEX

MOUNTING SIDE

MOUNTING SIDE

26.5

29.5

42.0

0

25.5

34.7

42.9

27.6

41.2

2500 Volts

ISO

IGBT FWDi Converter Diode NTC Thermistor

95.5

29.5

39.9

50.3

65.5

89.6

98.2

74.6

00

52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

53

54

55

56

57

58

59

60

61

RN

RP SP TP

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

37.0

26.6

71.0

84.6

WP

TNSN

UP

UN

UP

UN

47.4

64.2

Dimensions in mm (Tolerance: ±1mm)

Th

VP

VN

Br

WN

WP

VP

N

V

WN

77.8

97.9

81.4

91.4

73.0

86.1

10 1.2

Br

0

30

1 7.8

29

28

27.1

27

26

33.6

35.2

25

24

23

5Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)

150

VGE = 20V

13

125

15

100

, (AMPERES)

C

75

50

25

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

10

SWITCHING TIME, (ns)

10

Tj = 25°C

= 125°C

T

j

2

1

0 1 32 4

EMITTER-COLLECTOR VOLTAGE, V

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

3

t

f

t

2

1

0

10

d(off)

t

d(on)

1

10

GATE RESISTANCE, R

Tj = 25°C

12

11

10

8

9

, (VOLTS)

EC

t

r

VCC = 300V
V

= ±15V

GE

I

= 75A

C

T

= 125°C

j

Inductive Load

, (Ω)

G

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(INVERTER PART - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(INVERTER PART - TYPICAL)

1

10

, (nF)

res

0

10

, C

oes

, C

ies

-1

10

CAPACITANCE, C

VGE = 0V

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 300V
V

GE

R

= 8.2Ω

2

10

G

T

= 25°C

j

Inductive Load

(ns)

rr

(A), t

rr

0

10

10

(INVERTER PART - TYPICAL)

= ±15V

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

15075 100 12525 50

0

CE

4

10

C

ies

3

10

C

oes

C

res

1

2

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

10

20

16

, (VOLTS)

GE

12

COLLECTOR-EMITTER

(INVERTER PART - TYPICAL)

Tj = 25°C

IC = 150A

IC = 75A

IC = 30A

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

t

f

t

d(off)

t

d(on)

VCC = 300V
V

= ±15V

GE

R

= 8.2Ω

G

T

= 125°C

j

Inductive Load

0

COLLECTOR CURRENT, IC, (AMPERES)

t

r

1

10

GATE CHARGE VS. V

(INVERTER PART)

10

GE

IC = 75A

VCC = 200V

VCC = 300V

2

8

REVERSE RECOVERY, I

1

2

10

10

0

10

EMITTER CURRENT, IE, (AMPERES)

1

10

I

rr

t

rr

2

10

4

GATE-EMITTER VOLTAGE, V

0

0

100 300200

GATE CHARGE, QG, (nC)

6 Rev. 11/11

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)

75 Amperes/600 Volts

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

1

10

VCC = 300V
V

= ±15V

GE

R

= 8.2Ω

G

T

= 125°C

j

Inductive Load

, (mJ/PULSE)

off

, E

on

10

SWITCHING LOSS, E

10

10

10

, (mJ/PULSE)

rr

10

REVERSE RECOVERY

SWITCHING LOSS, E

10

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

E

on

E

0

-1

2

1

0

-1

off

0

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

10

SATURATION VOLTAGE CHARACTERISTICS

GATE RESISTANCE

(INVERTER PART - TYPICAL)

VCC = 300V
V

= ±15V

GE

I

= 75A

E

T

= 125°C

j

Inductive Load

0

GATE RESISTANCE, R

COLLECTOR-EMITTER

(BRAKE PART - TYPICAL)

1

10

E

rr

1

10

VGE = 15V

Tj = 25°C

= 125°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR-CURRENT, IC, (AMPERES)

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

2

10

VCC = 300V
V

= ±15V

GE

I

= 75A

C

T

= 125°C

j

Inductive Load

1

10

, (mJ/PULSE)

off

, E

on

10

SWITCHING LOSS, E

10

2

10

th(j-c')

10

10

• (NORMALIZED VALUE)

10

th

= R

th

Z

2

, (Ω)

G

10

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

, (AMPERES)

F

10

FORWARD CURRENT, I

1007525 50

10

E

on

E

off

0

-1
0

10

10-310

0

-1

-2

-3

2

1

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART - TYPICAL)

-2

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.44°C/W
(IGBT)
R

=

th(j-c)

0.85°C/W
(FWDi)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(BRAKE PART - TYPICAL)

1

10

-1

10

-5

10

TIME, (s)

0

10

R

=

th(j-c)

0.24°C/W
(Converter
Diode)

-4

10

Tj = 25°C

= 125°C

T

, (VOLTS)

F

j

0

0 1 32 4

FORWARD VOLTAGE, V

2

10

1

10

-1

10

-2

10

-3

10

-3

10

REVERSE RECOVERY SWITCHING LOSS VS.

1

10

, (mJ/PULSE)

rr

0

10

REVERSE RECOVERY

SWITCHING LOSS, E

-1

10

10

3

10

2

10

, (AMPERES)

F

1

10

FORWARD CURRENT, I

0

10

0 0.5 1.51.0 2.0

10-310

0

th(j-c')

10

-1

10

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

EMITTER CURRENT

(INVERTER PART - TYPICAL)

VCC = 300V
V

= ±15V

GE

R

= 8.2Ω

G

T

= 125°C

j

Inductive Load

E

rr

0

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CONVERTER PART - TYPICAL)

1

10

Tj = 25°C

= 125°C

T

j

FORWARD VOLTAGE, V

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(BRAKE PART - TYPICAL)

-2

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

0.44°C/W
(IGBT)
R

=

th(j-c)

0.85°C/W
(Clamp Diode)

-1

10

-5

10

TIME, (s)

, (VOLTS)

F

10

-4

10

2

10

0

1

10

-1

10

-2

10

-3

10

-3

10

7Rev. 11/11