C&H Technology CM75DY-24H User Manual

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Suite 108
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75DY-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B

C

M

D

(3 TYP.)

R

H

E

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0

J 0.71 18.0

FF

E2C2E1

N

L

E2

Dimensions Inches Millimeters

K 0.67 17.0

L 0.63 16.0
M 0.51 13.0
N 0.47 12.0

P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0

S M5 Metric M5

K

C1

S - M5 THD
(3 TYP.)

R
H

Q - DIA.
(2 TYP.)

E2

J

E1
G1 G2

R

.110 TAB

P

G

G2
E2

C1

E1
G1

Dual IGBTMOD™
H-Series Module

75 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from the
table below -i.e. CM75DY-24H is a
1200V (V
IGBTMOD™ Power Module.

Type Current Rating V

CM 75 24

CE(sat)

(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 75 Ampere Dual

CES

Amperes Volts (x 50)

CES

257

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DY-24H
Dual IGBTMOD™ H-Series Module

75 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75DY-24H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 190 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts

75 Amperes

150* Amperes

75 Amperes

150* Amperes

600 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

A

IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 75A, VGE = 15V – 2.5 3.4** Volts

IC = 75A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 600V, IC = 75A, VGS = 15V – 375 – nC

IE = 75A, VGS = 0V – – 3.5 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 5.3 nF

VCC = 600V, IC = 75A, – – 350 ns

V

= V

GE1

= 15V, RG = 4.2Ω – – 250 ns

GE2

IE = 75A, diE/dt = –150A/µs – – 250 ns
IE = 75A, diE/dt = –150A/µs – 0.56 –

–– 15nF

– – 3 nF
– – 150 ns

– – 350 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.075 °C/W

Per IGBT – – 0.21 °C/W

Per FWDi – – 0.47 °C/W

258

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DY-24H
Dual IGBTMOD™ H-Series Module

75 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

150

125

100

, (AMPERES)

C

Tj = 25oC
VGE = 20V

15

12

11

75

50

25

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

10

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 150A

IC = 75A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

VCC = 600V
V

GE

R

= 4.2Ω

G

T

= 125°C

j

1

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

= ±15V

(TYPICAL)

t

d(off)

t

d(on)

IC = 30A

t

f

t

r

1

10

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C
T

= 125°C

j

(TYPICAL)

150

125

100

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C
T

= 125°C

j

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

75

50

25

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

di/dt = -150A/µsec

= 25°C

T

j

1

10

2

10

0

10

(TYPICAL)

(TYPICAL)

t

rr

I

rr

1

EMITTER CURRENT, IE, (AMPERES)

10

10

10

10

2

10

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 25 50 75 100 150

COLLECTOR-CURRENT, IC, (AMPERES)

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

VGE = 0V
f = 1MHz

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

2

20

IC = 75A

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

0

0 100 200 300 400 500

CAPACITANCE VS. V

(TYPICAL)

0

10

GATE CHARGE, V

VCC = 400V

GATE CHARGE, QG, (nC)

10

VCC = 600V

125

CE

C

ies

C

oes

C

res

1

GE

2

10

600

259

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DY-24H
Dual IGBTMOD™ H-Series Module

75 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.21°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.47°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

260