C&H Technology CM75DU-12H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM75DU-12H

U

V

TC Measured

Point

2 - Mounting
Holes
(6.5 Dia.)

CM

3-M5 Nuts

C2E1

E2

G1

C1

E1

E2

G2

C2E1 E2 C1

E2 G2G1 E1

K

J

L

A

D

C

R

B

M

F G

H

E

N

L

L

OO

PP Q

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Dual IGBTMOD™
U-Series Module

75 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

CE(sat)

(70ns) Free-Wheel Diode

Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0

B 3.15±0.01 80.0±0.25

C 1.89 48.0

D 0.94 24.0

E 0.28 7.0

F 0.67 17.0

G 0.91 23.0

H 0.91 23.0

J 0.43 11.0

K 0.71 18.0

L 0.16 4.0

Applications:

£ AC Motor Control
£ Motion/Servo Control

Dimensions Inches Millimeters

M 0.47 12.0

N 0.53 13.5

O 0.1 2.5

P 0.63 16.0

Q 0.98 25.0

R 1.18 +0.04/-0.02 30.0 +1.0/-0.5

S 0.3 7.5

T 0.83 21.2

U 0.16 4.0

V 0.51 13.0

£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM75DU-12H is a
600V (V

), 75 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 75 12

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM75DU-12H
Dual IGBTMOD™ U-Series Module

75 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM75DU-12H Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E SHORT) V

Gate-Emitter Voltage (C-E SHORT) V

Collector Current (Tc = 25°C) IC 75 Amperes

Peak Collector Current I

Emitter Current** (Tc = 25°C) IE 75 Amperes

Peak Emitter Current** IEM 150* Amperes

Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 310 Watts

Mounting Torque, M5 Main Terminal – 31 in-lb

Mounting Torque, M6 Mounting – 40 in-lb

Weight – 310 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

-40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

CM

2500 Volts

iso

j(max)

150* Amperes

rating.

Static Electrical Characteristics,Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

VGE = V

GES

IC = 7.5mA, VCE = 10V 4.5 6 7.5 Volts

GE(th)

IC = 75A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

CE(sat)

VCE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 75A, VGE = 15V, Tj = 125°C – 2.6 – Volts

Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 150 – nC

Emitter-Collector Voltage** VEC IE = 75A, VGE = 0V – – 2.6 Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Times Fall Time tf Load Switching Operation – – 300 ns

Diode Reverse Recovery Time** trr IE = 75A, diE/dt = -150A/μs – – 160 ns

Diode Reverse Recovery Charge** Qrr IE = 75A, diE/dt = -150A/μs – 0.18 – µC

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

– – 6.6 nf

ies

VCE = 10V, VGE = 0V – – 3.6 nf

oes

– – 1 nf

res

VCC = 300V, IC = 75A, – – 100 ns

d(on)

= V

GE1

RG = 8.3Ω, Resistive – – 200 ns

d(off)

= 15V, – – 250 ns

GE2

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

2

2

Q Per IGBT 1/2 Module – – 0.4 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.9 °C/W

th(j-c)

Per Module, Thermal Grease Applied – 0.035 – °C/W

th(c-f)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0 2 4 6 8 10

COLLECTOR CURRENT, I

C

, (AMPERES)

100

50

25

0

75

125

150

15

14

12

13

11

8

10

9

VGE =

20V

Tj = 25

o

C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

0 4 8 12 16 20

125

100

75

50

25

0

150

VCE = 10V

Tj = 25°C
Tj = 125°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 40 8

0 120 160

4

3

2

1

0

VGE = 15V

Tj = 25°C
Tj = 125°C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat

)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

0 4 8 12 16 2

0

8

6

4

2

0

Tj = 25°C

IC = 30A

IC = 150A

IC = 75A

0.6 1.0 1.4 2.2 2.61.8 3.0

10

0

10

1

10

2

EMITTER-COLLECTOR VOLTAGE,

VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

EMITTER CURRENT, I

E

, (AMPERES)

Tj = 25°C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

-1

10

0

10

2

10

2

10

0

10

1

10

-1

10

-2

VGE = 0V
f = 1MHz

10

1

C

oes

C

res

C

ies

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

0

10

1

10

2

10

2

10

1

t

d(off)

t

d(on)

t

r

VCC = 300V
VGE = ±15V
RG = 8.3 Ω
Tj = 125°C

t

f

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

0

10

1

10

2

10

3

10

2

10

1

t

rr

I

rr

di/dt = -150A/µsec
Tj = 25°C

10

2

10

1

10

0

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE, V

GE

20

0 5

0

15

10

5

0

100

150 200

VCC = 300V

VCC = 200V

IC = 75A

CM75DU-12H
Dual IGBTMOD™ U-Series Module

75 Amperes/600 Volts

3

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25°C
Per Unit Base = R

th(j-c)

= 0.4°C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

TIME, (s)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(FWDi)

10

1

10

-5

10

-4

10

-3

10

0

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

Single Pulse
TC = 25°C
Per Unit Base = R

th(j-c)

= 0.9°C/W

Z

th

= R

th

• (NORMALIZED VALUE)

10

-1

10

-2

10

-3

CM75DU-12H
Dual IGBTMOD™ U-Series Module

75 Amperes/600 Volts

4

4