C&H Technology CM600HU-24F User Manual

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CM600HU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

T (2 TYP)

A
D

F

G

S (4 TYP)

N

G

E

H J K

E

C

P

TC MEASURING
POINT

CM

R (2 TYP.)

L

BE

C

Q

Trench Gate Design
Single IGBTMOD™

600 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con­nected super-fast recover y free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

E

E
G

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.15 80.0
C 1.34 +0.04/-0.02 34.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.22 5.5
G 0.57 14.5
H 0.53 13.5

J 0.96 24.5

C

RTC

Dimensions Inches Millimeters

K 1.14 29.0
L 0.37 9.5
N 1.02 +0.04/-0.02 26.0 +1.0/-0.5
P 0.85 21.5
Q 0.16 4.0
RM8 M8
S 0.26 Dia. 6.5 Dia.
TM4 M4

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM600HU-24F is a
1200V (V

), 600 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 600 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HU-24F
Trench Gate Design Single IGBTMOD™

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM600HU-24F Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 T erminal – 15 in-lb
Weight – 600 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
600 Amperes

1200* Amperes

600 Amperes

1200* Amperes

2400 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 80 µA

GES

IC = 60mA, VCE = 10V 5 6 7 Volts

IC = 600A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 600A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 600A, VGE = 15V – 6600 – nC

IE = 600A, VGE = 0V – – 3.2 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HU-24F
Trench Gate Design Single IGBTMOD™

600 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 10 nf

VCC = 600V, IC = 600A, – – 300 ns

V

= V

GE1

= 15V, – – 150 ns

GE2

RG = 1.0 ⍀,––800 ns

Inductive Load – – 300 ns

Switching Operation – – 500 ns

IE = 600A – 43.2 – µC

––230 nf

––6nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

QPer IGBT, Tc Reference – 0.063 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi, Tc Reference – – 0.075 °C/W

th(j-c)

Point per Outline Drawing

'Q Per IGBT, – 0.03 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.015 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HU-24F
Trench Gate Design Single IGBTMOD™

600 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

1000

Tj = 25

o

C

VGE = 20V

10

11

15

9.5

9

800

, (AMPERES)

C

600

8.5

400

(TYPICAL)

(TYPICAL)

2

10

8

, (VOLTS)

EC

VCC = 600V
V

= ±15V

GE

R

= 1.0 Ω

G

T

= 25°C

j

Inductive Load

200

COLLECTOR CURRENT, I

0

012 34

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

Tj = 25°C

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

01.02.03.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

I

2

10

REVERSE RECOVERY TIME, t

1

10

1

10

rr

t

rr

EMITTER CURRENT, IE, (AMPERES)

SATURATION VOLTAGE CHARACTERISTICS

3

, (VOLTS)

2

CE(sat)

1

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

0

3

10

, (nF)

res

2

, C

10

oes

, C

ies

1

10

CAPACITANCE, C

0

10

10

3

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

2

10

8

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0 200 400

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

CE

C

ies

C

oes

C

res

1

10

GE

IC = 600A

VCC = 400V

VCC = 600V

0 2000

4000 6000 8000 10000

GATE CHARGE, QG, (nC)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

Tj = 25°C

4

, (VOLTS)

CE(sat)

3

IC = 1200A

2

COLLECTOR-EMITTER

IC = 600A

IC = 240A

1

SATURATION VOLTAGE, V

0

1200800 1000600

2

10

068 1210 181614 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

th(j-c)

R

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

VCC = 600V
V
R
T
Inductive Load

2

10

TRANSIENT THERMAL

(IGBT & FWDi)

-2

= 0.063°C/W (IGBT)
= 0.075°C/W (FWDi)

-1

10

-5

10

TIME, (s)

= ±15V

GE

= 1.0 Ω

G

= 125°C

j

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4