C&H Technology CM600HB-90H User Manual

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CM600HB-90H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

S

P

F

Q

R

U NUTS

T

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12 130.0
B 5.51 140.0
C 1.50 38.0
D 4.48 114.0
E 4.88±0.01 124.0±0.25
F 1.57 40.0
G 0.79 20.0
H 0.41 10.35

J 0.42 10.65
K 1.92 48.8
L 2.24±0.01 57.0±0.25
M 1.71 43.5

(3 TYP)

D

LL

CM

C

K

C

G

E

N

Y

C

E

EG

J

M

C

E

Dimensions Inches Millimeters

N 2.42 61.5
P 0.59 15.0
Q 1.57 40.0
R 0.20 5.2
S 1.16 29.5
T 1.10 28.0
U M4 Metric M4
V M8 Metric M8

W 0.28 Dia. Dia. 7.0

X 0.20 5.0
Y 0.71 18.0

C

E

H

C

E

G

W
(6 TYP)

V NUTS
(4 TYP)

EB

C

X

Single IGBTMOD™
HVIGBT

600 Amperes/4500 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists

of one IGBT Transistor with a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects

are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

□ Low Drive Power
□ Low V
□ Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ Traction
□ Medium Voltage Drives
□ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM600HB-90H is a 4500V (V
600 Ampere Single IGBTMOD™
Power Module.

Type Current Rating V

CM 600 90

CE(sat)

Free-Wheel Diode

Heat Sinking

CES

CES

Amperes Volts (x 50)

),

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HB-90H
Single IGBTMOD™ HVIGBT

600 Amperes/4500 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM600HB-90H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Pulse) I
Diode Forward Current** (Tc = 25°C) I
Diode Forward Surge Current** (Pulse) I
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C) P

j

stg
CES
GES

C

CM

E

EM

C

Max. Mounting Torque M8 Terminal Screws – 115 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb
Module Weight (Typical) – 1.5 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

rating.

iso

-40 to 150 °C

-40 to 125 °C
4500 Volts

±20 Volts
600 Amperes

1200* Amperes

600 Amperes

1200* Amperes

6700 Watts

6000 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G VCC

EC

VCE = V
VGE = V

, VGE = 0V ––12.0 mA

CES

, VCE = 0V ––0.5

GES

µ

A

IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 600A, VGE = 15V, Tj = 25°C – 3.0 3.9* Volts

IC = 600A, VGE = 15V, Tj = 125°C – 3.3 – Volts

= 2250V, IC = 600A, VGE = 15V – 5.4 – µC

IE = 600A, VGE = 0V – 4.0 5.2 Volts

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HB-90H
Single IGBTMOD™ HVIGBT

600 Amperes/4500 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies

oes

res

d(on) VCC

r VGE1

d(off) RG

f

rr

rr

VGE = 0V, VCE = 10V – 8.0 – nF

= 2250V, IC = 600A, –– 2.4 µs

Resistive Load Switching Operation –– 1.2 µs

IE = 600A, diE/dt = -1200A/µs –– 1.8µs

IE =600A, diE/dt = -1200A/µs – 240* –

= V

= 15V, –– 2.4 µs

GE2

= 15Ω –– 6.0 µs

– 108 – nF

– 2.4 – nF

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance, Case to Fin R

Q Per IGBT ––0.015 K/W

th(j-c)

D Per FWDi ––0.030 K/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.010 – K/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HB-90H
Single IGBTMOD™ HVIGBT

600 Amperes/4500 Volts

SATURATION VOLTAGE CHARACTERISTICS

6

5

, (VOLTS)

4

CE(sat)

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 500 1000

COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL

1.2

th(j-c)

1.0

IMPEDANCE CHARACTERISTICS

Single Pulse
T

= 25°C

C

Per Unit Base = R

(FWDi)

th(j-c)

= 0.030 K/W

0.8

0.6

• (NORMALIZED VALUE)

0.4

th

= R

th

Z

0.2

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-3

10

REVERSE RECOVERY CHARACTERISTICS

-2

10

TIME, (s)

FREE-WHEEL DIODE

(TYPICAL)

-1

10

0.6

0.5

, (J/P)

rec

E

0.4

0.3

0.2

0.1

REVERSE RECOVERY ENERGY,

0

0 200 400 800 1000600

EMITTER CURRENT, IE, (AMPERES)

VCC = 2250V

= ±15V

V

GE

= 15Ω

R

G

= 180nH

L

S

= 125°C

T

j

Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions

1500

10

0

1400

1200

1000

, (AMPERES)

C

COLLECTOR CURRENT, I

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

6

Tj = 25°C

= 125°C

T

5

, (VOLTS)

EC

j

4

3

2

1

EMITTER-COLLECTOR VOLTAGE, V

0

0 500 1000

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE TURN-ON SWITCHING

ENERGY CHARACTERISTICS

(TYPICAL)

6

VCC = 2250V

= ±15V

V

GE

5

= 15Ω

R

, (J/P)

G

on

= 180nH

L

E

S

= 125°C

T

j

4

Inductive Load Integrated
Over Range of 10%

3

2

1

TURN-ON SWITCHING ENERGY,

0

0 200 400 600 1200

COLLECTOR CURRENT, IC, (AMPERES)

TURN-ON SWITCHING

SAFE OPERATING AREA (RBSOA)

800 1000 0 200 400 600 800 1000 1200

(TYPICAL)

800

600

VCC = 3000V

400

200

= ±15V

V

GE

= 15Ω

R

G

= 100nH

L

S

= 125°C

T

j

0

0 1000 2000 3000 4000 5000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

1500

TRANSIENT THERMAL

1.2

th(j-c)

1.0

IMPEDANCE CHARACTERISTICS

Single Pulse

= 25°C

T

C

Per Unit Base = R

(IGBT)

th(j-c)

= 0.015 K/W

0.8

0.6

• (NORMALIZED VALUE)

0.4

th

= R

th

Z

0.2

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-3

10

HALF-BRIDGE TURN-OFF SWITCHING

-2

10

TIME, (s)

ENERGY CHARACTERISTICS

(TYPICAL)

-1

10

3.0

2.5

, (J/P)

off

E

2.0

1.5

VCC = 2250V

= ±15V

V

1.0

0.5

TURN-OFF SWITCHING ENERGY,

GE

= 15Ω

R

G

= 180nH

L

S

= 125°C

T

j

Inductive Load Integrated
Over Range of 10%

0

COLLECTOR CURRENT, IC, (AMPERES)

DIODE REVERSE RECOVERY

SAFE OPERATING AREA

(TYPICAL)

1500

1250

, (AMPERES)

rr

1000

750

500

250

REVERSE RECOVERY CURRENT, I

0

0 1000 2000 3000 4000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

4