C&H Technology CM600HB-24A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600HB-24A

W

H

K

F

S

J J

Z

E

C

E

G

U

M

C

A

R

P

B

T

E

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Q

L

G

N

Y - THD (2 TYP.)

V - THD
(2 TYP.)

X - DIA.
(4 TYP.)

E

E

C

G

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Single IGBTMOD™
A-Series Module

600 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transis­tor in a single configuration with
a reverse connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 3.66±0.008 93.0±0.25

D 2.44±0.008 62.0±0.25

E 1.57 40.0

F 1.42 Max. 36.0 Max.

G 1.14 29.0

H 1.00 Max. 25.5 Max

J 0.94 24.5

K 0.94 24.5

L 0.83 21.0

M 0.71 18.0

Dimensions Inches Millimeters

N 0.69 17.5

P 0.61 15.5

Q 0.51 13.0

R 0.49 12.5

S 0.45 11.5

T 0.43 11.0

U 0.35 9.0

V M8 Metric M8

W 0.28 7.0

X 0.256 Dia. 6.50 Dia.

Y M4 Metric M4

Z 0.12 3.04

system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ DC Chopper
£ Inverter
£ UPS
£ Forklift

Ordering Information:

Example: Select the complete
part module number you
desire from the table below

-i.e. CM600HB-24A is a 1200V
(V

), 600 Ampere Single

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 24

V

CES

101/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600HB-24A
Single IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM600HB-24A Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 80°C)*4 I

Peak Collector Current (Pulse, Repetitive)*2 I

Maximum Collector Dissipation (TC = 25°C)*2,*4 P

Emitter Current (TC = 25°C) IE*1 600 Amperes

Peak Emitter Current (Pulse, Repetitive)*2 I

Mounting Torque, M8 Main Terminal — 95 in-lb

Mounting Torque, M6 Mounting — 26 in-lb

Mounting Torque, M4 G(E) Terminal — 13 in-lb

Weight — 560 Grams

Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

600 Amperes

C

1200 Amperes

CM

3670 Watts

C

*1 1200 Amperes

EM

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

V

CES

V

GES

I

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C*3 — 2.1 3.0 Volts

CE(sat)

C

= V

CE

GE

= 60mA, VCE = 10V 6.0 7.0 8.0 Volts

C

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 1.5 µA

GES

= 600A, VGE = 15V, Tj = 125°C*3 — 2.4 — Volts

Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 3000 — nC

Emitter-Collector Voltage VEC*1 I

= 600A, VGE = 0V*3 — — 3.8 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 350 ns

Diode Reverse Recovery Time trr*1 Switching Operation, — — 250 ns

Diode Reverse Recovery Charge Qrr*1 I

*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

— — 105 nf

ies

V

oes

— — 2.0 nf

res

— — 660 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 9 nf

CE

= 600V, IC = 600A, — — 190 ns

CC

= V

= 15V, RG = 0.52Ω, — — 700 ns

GE2

= 600A — 19.0 — µC

E

rating.

j(max)

2 01/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

0

10

-1

10

1

01 3425

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

4

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6810 1412 16 18 20

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0

300

900

2

1

0

1200

VGE = 15V

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 1200A

IC = 600A

IC = 240A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246 810

300

0

VGE =

20V

10

11

12

15

13

9

Tj = 25°C

600

900

1200

600

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= 15V

R

G

= 0.52Ω

T

j

= 125°C

Inductive Load

t

f

10

3

Tj = 25°C
T

j

= 125°C

CM600HB-24A
Single IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

External Gate Resistance RG 0.52 — 7.8 Ω

*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

Q Per IGBT*4 — — 0.034 °C/W

th(j-c)

D Per FWDi*4 — — 0.053 °C/W

th(j-c)

Thermal Grease Applied*4,*5 — 0.02 — °C/W

th(c-f)

301/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.034°C/W
(IGBT)
R

th(j-c)

=

0.051°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

900 1800 2700 45003600

VCC = 600V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY, I

rr

, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

VCC = 600V
V

GE

= 15V

R

G

= 0.52Ω

T

j

= 25°C

Inductive Load

VCC = 400V

IC = 600A

10

3

I

rr

t

rr

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= 15V

R

G

= 0.52Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

I

C

= 600A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

3

10

-1

10

0

10

2

10

1

10

1

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

E

SW(on)

E

SW(off)

GATE RESISTANCE, RG, ()

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

-1

10

0

10

1

10

0

10

1

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

VCC = 600V
V

GE

= 15V

I

C

= 600A

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

R

G

= 0.52Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

E

rr

E

rr

E

SW(on)

E

SW(off)

CM600HB-24A
Single IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

4 01/10 Rev. 1