C&H Technology CM600HA-5F User Manual

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600HA-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

E

H

J

K

y

E

x

V -THD.

(2 TYP.)

T

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 3.66 93.0
C 0.63 16.0
D 0.30 7.5
E 0.69 17.5
F 1.14 29.0
G 0.79 20.0
H 0.94 24.0

J 0.31 7.9
K 0.24 6.0
L 2.44 62.0
M 1.89 48.0

G

E

E

G

F

G

E

C

B

A

C

D

W - DIA. (4 TYP.)

Q

P

M

N

U - THD.
(2 TYP.)

Dimensions Inches Millimeters

N 0.39 10.0
P 0.39 10.0
Q 0.51 13.0
R 0.33 8.5
S 1.42 36.0
T 1.02 25.8
U M6 Metric M6
V M4 Metric M4

W 0.256 6.5

X 0.79 20.0
Y 0.35 9.0

L

R

S

C

Trench Gate Design
Single IGBTMOD™

600 Amperes/ 250 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration, with a reverse con­nected super-fast recover y free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Dr ive Power
□ Low V

□ Discrete Super-Fast

□High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ DC Chopper
□ Inverter
□ UPS
□ Forklift

Ordering Information:

Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM600HA-5F is a 250V (V
600 Ampere Single IGBTMOD™
Power Module.

Type Amperes Volts (x 50)

CM 600 5

CE(sat)

Recovery Free-Wheel
Diodes

(20-25 kHz)
Heat Sinking

Current Rating V

CES

CES

),

369

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-5F
Trench Gate Design Single IGBTMOD™

600 Amperes/250 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol CM600HA-5F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb
Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb
Module Weight (T ypical) — 400 Grams
Isolation Voltage, AC 1 minute, 60Hz V

RMS

-40 to 150 °C

-40 to 125 °C
250 Volts
±20 Volts
600 Amperes

1200 Amperes

600 Amperes

1200 Amperes

960 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts
IC = 600A, VGE = 10V, — 1.2 1.7 Volts

IC = 600A, VGE = 10V, Tj = 150°C — 1.1 — Volts
Total Gate Charge Q
Diode Forward Voltage V

G

FM

VCC = 50V, IC = 600A, VGS = 10V — 2200 — nC

IE = 600A, VGS = 0V — — 2.0 Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)VGE1

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

IES
OES
RES

r

F
rr

rr

VGE = 0V, VCE = 10V — — 7.5 nF

VCC = 50V, IC = 600A, — — 4000 ns

= V

= 10V, RG = 4.2Ω,——1000ns

GE2

Resistive Load — — 500 ns
IE = 600A, diE/dt = -1200A/ms — — 300 ns
IE = 600A, diE/dt = -1200A/ms — 9.5 — µC

— — 165 nF

— — 5.6 nF
— — 1000 ns

Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied — — 0.040 °C/W

Per IGBT — — 0.13 °C/W

Free Wheel Diode — — 0.19 °C/W

370

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-5F
Trench Gate Design Single IGBTMOD™

600 Amperes/250 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

1000

800

, (AMPERES)

C

Tj = 25oC

VGE = 15V

5.75
10
8

6

5.5

600

5.25

400

200

COLLECTOR CURRENT, I

0

012345

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 5 10 15

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

10

10

SWITCHING CHARACTERISTICS

4

VCC = 100V
V

GE

R

= 4.2Ω

G

T

= 125°C

j

3

= ±10V

t

d(off)

t

d(on)

(TYPICAL)

4.5

5.0

4.75

IC = 600A
IC = 1200A

IC = 240A

TRANSFER CHARACTERISTICS

(TYPICAL)

1200

VCE = 10V

1000

, (AMPERES)

C

800

Tj = 25°C
T

= 125°C

j

600

400

COLLECTOR CURRENT, I

200

0

0246810

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

Tj = 25°C

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0.6 0.8 1.0 1.2 1.4 1.6 1.8

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -1200A/µsec
T

= 25°C

j

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

t

I

rr

rr

, (VOLTS)

CE(sat)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

, (nF)

res

, C

oes

, C

ies

CAPACITANCE, C

3

10

, (AMPERES)

rr

2

10

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

2.0

VGE = 15V

1.5

Tj = 25°C
T

= 125°C

j

(TYPICAL)

1.0

0.5

0

0 400 600 1000800200

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

3

10

VGE = 0V
f = 1MHz

2

10

1

10

0

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

20

IC = 600A

15

, (VOLTS)

GE

0

10

GATE CHARGE, V

VCC = 50V

VCC = 100V

1

10

GE

10

1200

CE

C

ies

C

oes

C

res

2

10

SWITCHING TIME, (ns)

2

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

f

t

r

2

10

10

REVERSE RECOVERY TIME, t

3

10

1

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

3

10

10

5

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

1

0

0123

GATE CHARGE, QG, (µC)

45

371

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-5F
Trench Gate Design Single IGBTMOD™

600 Amperes/250 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

th(j-c)

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

-2

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-3

10

(IGBT)

= 0.13°C/W

th(j-c)

-1

-2

10

10

TIME, (s)

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

th(j-c)

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

-2

10

-3

10

0

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

1

-3

10

(FWDi)

= 0.185°C/W

th(j-c)

-1

-2

10

10

TIME, (s)

0

10

1

10

372