C&H Technology CM600HA-12H User Manual

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Suite 108
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600HA-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
C

Y - THD (2 TYP.)

E

ED

T

X - DIA.
(4 TYP.)

H

W

E

G

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.15 80.0
C 3.66±0.008 93.0±0.25
D 2.44±0.008 62.0±0.25
E 1.57 40.0
F 1.42 Max. 36.0 Max.
G 1.14 29.0
H 1.00 Max. 25.5 Max.

J 0.96 25.0
K 0.94 24.5
L 0.83 21.0
M 0.71 18.0

U

G

Q

E

E

L G

J J

S

M

C

N

Z

Dimensions Inches Millimeters

N 0.69 17.5
P 0.61 15.5
Q 0.51 13.0
R 0.49 12.5
S 0.45 11.5
T 0.43 11.0
U 0.35 9.0
V M8 Metric M8

W 0.28 7.0

X 0.256 Dia. Dia. 6.50
Y M4 Metric M4
Z 0.12 3.04

R

K

P

V - THD
(2 TYP.)

F

C

B

Single IGBTMOD™
H-Series Module

600 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM600HA-12H
is a 600V (V
Single IGBTMOD™ Power Module.

Type Current Rating V

CM 600 12

CE(sat)

(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 600 Ampere

CES

Amperes Volts (x 50)

CES

177

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-12H
Single IGBTMOD™ H-Series Module

600 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM600HA-12H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (T ypical) – 560 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts
600 Amperes

1200* Amperes

600 Amperes

1200* Amperes

2100 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES

GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

µ

IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 600A, VGE = 15V – 2.1 2.8** Volts

A

IC = 600A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 600V, IC = 600A, VGS = 15V – 1800 – nC

IE = 600A, VGS = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 21 nF

VCC = 300V, IC = 600A, – – 700 ns

V

= V

GE1

= 15V, RG = 1.0Ω – – 350 ns

GE2

IE = 600A, diE/dt = –1200A/µs––110ns
IE = 600A, diE/dt = –1200A/µs – 1.62 –

–– 60nF

– – 12 nF
– – 350 ns

– – 300 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – – 0.035 °C/W

Per IGBT – – 0.06 °C/W
Per FWDi – – 0.12 °C/W

178

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-12H
Single IGBTMOD™ H-Series Module

600 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

1000

800

, (AMPERES)

C

Tj = 25oC

VGE = 20V

15

12

11

600

400

200

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 1200A

IC = 600A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

(TYPICAL)

t

f

t

r

IC = 240A

VCC = 300V

= ±15V

V

GE

= 1.0 Ω

R

G

T

= 125°C

j

2

10

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

1200

1000

800

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C

= 125°C

T

j

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

600

2

400

200

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

Tj = 25°C

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

di/dt = -1200A/µsec

= 25°C

T

j

1

3

10

10

1

10

(TYPICAL)

(TYPICAL)

I

rr

t

rr

2

EMITTER CURRENT, IE, (AMPERES)

10

10

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 200 400 600 1000

2

10

, (nF)

res

, C

oes

, C

ies

1

10

CAPACITANCE, C

0

10

-1

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

10

3

0

0 400 800 1200 1600 2000

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V
f = 1MHz

0

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

GATE CHARGE, V

IC = 600A

VCC = 200V

GATE CHARGE, QG, (nC)

800

CE

1

10

GE

VCC = 300V

C

ies

C

oes

C

res

1200

10

2400

2

179

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM600HA-12H
Single IGBTMOD™ H-Series Module

600 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

= R

-2

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.06°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.12°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

180