C&H Technology CM600E2Y-34H User Manual

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MITSUBISHI HVIGBT MODULES

CM600E2Y-34H

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM600E2Y-34H

● IC...................................................................600A

● V

● Insulated T ype

● 1-elements in a pack (for brake)

APPLICATION

DC choppers, Dynamic braking choppers.

HIGH POWER SWITCHING USE

INSULATED TYPE

CES ....................................................... 1700V

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

3 - M4 NUTS

CM

E1

G1

E1

57

C1

±0.25

53

11.85

114

57

±0.25

C2

E2

C1

40

C2

16

55.2

E2

G2

4 - M8 NUTS

20

±0.25

30

140

124

6 - φ 7 MOUNTING HOLES

14

E1

G1

C1

11.5

E1

C1

CIRCUIT DIAGRAM

5

35

C2

E2

38

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

28

LABEL

31.5

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM600E2Y-34H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings
VCES
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

j) should not increase beyond 150°C.

VGE = 0V

CE = 0V

V
DC, T

C = 95°C

Pulse (Note 1)

Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

V

CE = VCES, VGE = 0V

IC = 60mA, VCE = 10V
V

GE = VGES, VCE = 0V

T

j = 25°C
j = 125°C

T

CE = 10V

V
V

GE = 0V
CC = 850V, IC = 600A, VGE = 15V

V
V

CC = 850V, IC = 600A

V

GE1 = VGE2 = 15V

R

G = 3.3Ω

I

C = 600A, VGE = 15V (Note 4)

Resistive load switching operation
I

E = 600A, VGE = 0V

I

E = 600A

die / dt = –1200A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 1/2 module)
IF = 600A, Clamp diode part
I

F = 600A

di

f / dt = –1200A / µs, Clamp diode part

Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/2 module)

–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

Min Typ Max

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

1700

±20
600

1200

600
1200
6900

4000

1.5

Limits

—

5.54.5 6.5

—

2.75

3.30
70

10.0

3.8

3.3
—
—
—
—

2.40
—

100
—
—

0.016

2.50
—

100

—

0.016

15

0.5

3.58
—
—
—
—
—

1.20

1.50

2.00

0.60

3.12

2.00
—

0.018

0.056
—

3.25

2.00
—

0.056
—

V
V
A
A
A
A

W

°C
°C

V
N·m
N·m
N·m

kg

Unit

mA

V

µA

V

nF
nF
nF

µC
µs
µs
µs
µs

V

µs
µC

K/W
K/W
K/W

V

µs
µC

K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM600E2Y-34H

HIGH POWER SWITCHING USE

INSULATED TYPE

)

A

(

1200

1000

800

OUTPUT CHARACTERISTICS

Tj = 25°C
VGE = 14V
VGE = 15V
VGE = 20V

(

TYPICAL

VGE = 12V

VGE = 13V

600

400

200

COLLECTOR CURRENT IC

0

468

2

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

5

)

V

(

CE(sat)

VGE = 15V

4

(

TYPICAL

3

)

VGE = 11V

V

VGE = 9V

VGE = 8V
VGE = 7V

)

GE = 10V

CE

100

(V)

)
A

(

TRANSFER CHARACTERISTICS

1200

VCE = 10V

1000

(

TYPICAL

800

600

400

200

COLLECTOR CURRENT IC

0

GATE-EMITTER VOLTAGE VGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

10

)
V

(

CE(sat)

Tj = 25°C

8

(

TYPICAL

6

)

Tj = 25°C
Tj = 125°C

200481216

)

)

IC = 1200A

IC = 600A

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE V

0

0 200 400 600 800 1000 1200

COLLECTOR CURRENT IC (A

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

)

V

5

(

4

3

2

1

0

EMITTER-COLLECTOR VOLTAGE VEC

0 200 400 600 800 1000 1200

EMITTER CURRENT IE (A

(

TYPICAL

Tj = 25°C
Tj = 125°C

)

Tj = 25°C
T

j = 125°C

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

020161284

)

)
nF

(

CAPACITANCE Cies, Coes, Cres

)

GATE-EMITTER VOLTAGE VGE (V

CAPACITANCE CHARACTERISTICS

3

10

VGE = 0V, Tj = 25°C

7
5

Cies, Coes : f = 100kHz

3

Cres

2

2

10

7
5

3
2

1

10

7
5

3
2

0

10

–1

2310

(

TYPICAL

: f = 1MHz

5710023 5710123 5710

COLLECTOR-EMITTER VOLTAGE VCE (V

IC = 240A

)

)

Cies

Coes

Cres

2

)

Mar. 2003

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM600E2Y-34H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

5

VCC = 850V, VGE = ±15V

R

G

= 3.3Ω, Tj = 125°C

3

)

Inductive load

2

µs

(

0

10

7
5

3
2

SWITCHING TIMES

–1

10

(

TYPICAL

t

d(off)

t

d(on)

t

r

t

f

)

7

HALF-BRIDGE

5

5

710

2

23 5710

3

COLLECTOR CURRENT IC (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

1.0
VCC = 850V, VGE = ±15V,

R

G

)
J/P

(

= 3.3Ω, Tj = 125°C,

Inductive load

0.8

(

TYPICAL

)

0.6

0.4

0.2

SWITCHING ENERGY

0

0 200 400 12001000800600

CURRENT (A

)

23 5

)

E

on

E

off

E

rec

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

5

)
(

VCC = 850V, Tj = 125°C

µs

3

Inductive load

rr

V

GE

2

0

10

= ±15V, RG = 3.3Ω

TYPICAL

)

t

rr

7
5

I

3

rr

2

–1

10

7

REVERSE RECOVERY TIME t

5

5

710

2

23 5710

3

23 5

EMITTER CURRENT IE (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

3.0
VCC = 850V, IC = 600A,

V

GE

)

J/P

(

2.5

= ±15V, Tj = 125°C,

Inductive load

(

TYPICAL

)

2.0

1.5

1.0

0.5

SWITCHING ENERGY

0

0 1020304050

GATE RESISTANCE (Ω

)

5

A

(

rr

3
2

3

10
7

5
3

2

2

10
7

REVERSE RECOVERY CURRENT I

5

)

E

on

E

off

E

rec

)

GATE CHARGE CHARACTERISTICS

20

)
V

(

GE

16

VCC = 850V
I

C

= 600A

(

TYPICAL

12

8

4

GATE-EMITTER VOLTAGE V

0

1000 2000

GATE CHARGE QG (nC

)

1

10

7
5

3

th(j – c)

2

0

10

7
5

3
2

–1

10

7
5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

4000 500030000

10

10

)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

Single Pulse
T

C

= 25°C

R

th(j – c)Q

= 0.018K/W

th(j – c)R

R

= 0.056K/W

(Per 1/2 module)

–3

23 57 23 57 23 57

10

–2

TIME (s

–1

10

)

10

0

Mar. 2003