C&H Technology CM600DY-12NF User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
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1-800-274-4284
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E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM600DY-12NF
A
W
FF
B
N
J
L
(4 PLACES)
D
M NUTS (3 PLACES)
G
G
H
KKK
P P P
T THICK U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
TC MEASURED POINT (BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.002 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
Dimensions Inches Millimeters
M M6 Metric M6
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heatsinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low Drive Power £ Low V £ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control £ UPS £ Battery Powered Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM600DY-12NF is a 600V (V
CES
IGBTMOD™ Power Module.
Type Current Rating Amperes Volts (x 50)
CM 600 12
CE(sat)
Free-Wheel Diode
Heat Sinking
), 600 Ampere Dual
V
CES
1Rev. 09/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DY-12NF Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM600DY-12NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC´ = 89°C) IC 600 Amperes
Peak Collector Current ICM 1200* Amperes
Emitter Current** (TC = 25°C) IE 600 Amperes
Emitter Surge Current** IEM 1200* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj 150°C) PC 1130 Watts
Mounting Torque, M6 Main Terminal 40 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
600 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
Total Gate Charge QG V
Emitter-Collector Voltage** VEC I
V
CES
V
GES
I
GE(th)
I
CE(sat)
CE
GE
= 60mA, VCE = 10V 5.0 6.0 7.5 Volts
C
= 600A, VGE = 15V, Tj = 25°C 1.7 2.2 Volts
C
= 600A, VGE = 15V, Tj = 125°C 1.7 Volts
C
= 300V, IC = 600A, VGE = 15V 2400 nC
CC
E
= V
, VGE = 0V 1.0 mA
CES
= V
, VCE = 0V 0.5 µA
GES
= 600A, VGE = 0V 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load 300 ns
Diode Reverse Recovery Time** trr Switching Operation, 250 ns
Diode Reverse Recovery Charge** Qrr I
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC´ measured point is just under the chips. If this value is used, R
90 nf
ies
V
oes
3.6 nf
res
500 ns
d(on)
V
d(off)
th(f-a)
= 10V, VGE = 0V 11.0 nf
CE
= 300V, IC = 600A, 300 ns
CC
= V
GE1
should be measured just under the chips.
= 15V, RG = 4.2Ω, 750 ns
GE2
= 600A 8.7 µC
E
rating.
j(max)
2 Rev. 09/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
0
10
2
10
3
10
2
10
1
10
0
10
4
10
3
10
2
10
1
10
1
0 1 3 42 5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
0
300
900
2
1
0
1200
VGE = 15V
Tj = 25°C T
j
= 125°C
VGE = 0V
C
ies
C
oes
C
res
IC = 1200A
IC = 600A
IC = 240A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
300
0
VGE =
20V
10
11
12
15
13
9
8
Tj = 25
o
C
600
900
1200
600
10
-1
COLLECTOR CURRENT, IC, (AMPERES)
10
3
10
1
10
2
10
2
10
0
10
1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
VCC = 300V V
GE
= ±15V
R
G
= 4.2
T
j
= 125°C
Inductive Load
t
f
10
3
Tj = 25°C T
j
= 125°C
CM600DY-12NF Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Point per Outline Drawing
Thermal Resistance, Junction to Case R
Point per Outline Drawing
Thermal Resistance, Junction to Case R
T
Contact Thermal Resistance R
External Gate Resistance RG 1.0 10 Ω
Q Per IGBT 1/2 Module, TC Reference 0.11 °C/W
th(j-c)
D Per FWDi 1/2 Module, TC Reference 0.18 °C/W
th(j-c)
’Q Per IGBT 1/2 Module, 0.046 °C/W
th(j-c)
Reference Point Under Chips
C
Per 1/2 Module, Thermal Grease Applied 0.02 °C/W
th(c-f)
3Rev. 09/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
0
10
-5
10
-4
10
-3
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
• (NORMALIZED VALUE)
Single Pulse T
C
= 25°C Per Unit Base = R
th(j-c)
=
0.11°C/W (IGBT) R
th(j-c)
=
0.18°C/W (FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE VS. V
GE
20
0
16
12
8
4
0
700 1400 2100 35002800
VCC = 300V
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
VCC = 300V V
GE
= ±15V
R
G
= 4.2
T
j
= 25°C
Inductive Load
VCC = 200V
IC = 600A
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
10
2
10
1
10
2
10
1
10
0
VCC = 300V V
GE
= ±15V
R
G
= 4.2
T
j
= 125°C Inductive Load C Snubber at Bus
VCC = 300V V
GE
= ±15V
I
C
= 600A
T
j
= 125°C Inductive Load C Snubber at Bus
10
3
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE RESISTANCE, RG, ()
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
10
2
10
0
10
1
10
0
10
1
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
E
SW(on)
E
SW(off)
E
SW(on)
E
SW(off)
I
rr
t
rr
CM600DY-12NF Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
4 Rev. 09/09
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