C&H Technology CM600DXL-24S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600DXL-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

B

Cs1
(52)

C

D

E

F

AM

Es2
(47)G2(46)

X(4 PLACES)

Cs2
(42)

U

DETAIL "A"

E1C2 (33)

E1C2 (32)

M

40

39

38

37

36

S

35

34

T

33

32

31

30

H

29

28

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

PQRNC

AC

H

AM

AF

AL

AK

AN

DETAIL "B"

AG

AH

DETAIL "A"

AS
AR

AP

AC

AB

C1(1)

C1(2)

E2(3)

E2(4)

G

J

K

L

K

L

Y

Z

AAFED

Z

AD

R

Es1

TH2

(62)G1(61)

(57)

Tr 1Tr2

Di1 Di2

AM AM

AT

AU AU AV AU

63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41

AE

1

2

V

3

W(6 PLACES)

4

56789101112131415161718192021222324252627

DETAIL "B"

TH1

Th

(56)

NTC

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 5.39 137.0
C 4.79 121.7
D 4.61 117.2
E 4.33±0.02 110.0±0.5
F 3.72 94.5
G 0.6 15.14
H 0.26 6.5
J 0.53 13.5
K 0.14 3.6
L 0.3 7.75
M 0.016 4.05
N 1.53 39.0
P 0.86 22.0
Q 1.95 49.72
R 1.62 41.22
S 0.83 21.14
T 0.23 6.0
U 0.47 12.0
V 0.41 10.53
W M6 Metric M6
X 0.22 5.5 Dia.

Dimensions Inches Millimeters

Y 0.75 19.24
Z 0.86 22.0
AA 1.08 27.53
AB 0.14 3.5
AC 0.51 13.0
AD 0.19 3.0
AE 0.42 10.74
AF 0.67+0.04/-0.02 17.0+1.0/-0.5
AG 0.81 20.5
AH 0.29 7.4
AJ 0.05 1.2
AK 0.02 0.65
AL 0.04 1.15
AM 0.15 3.81
AN 0.5 12.5
AP 0.12 3.0
AQ 0.088 Dia. 2.25 Dia.
AR 0.102 Dia. 2.6 Dia.
AS 0.16 Dia. 4.3 Dia.
AT 0.67 16.9
AU 0.6 15.24
AV 0.75 19.05

Dual IGBTMOD™
NX-S Series Module

600 Amperes/1200 Volts

AJ

AQ

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM600DXL-24S is a 1200V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 24

CE(sat)

Free-Wheel Diode

Heat Sinking

), 600 Ampere Dual

V

CES

106/11 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DXL-24S
Dual IGBTMOD™ NX-S Series Module

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 119°C)

*2,*4

IC 600 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse, Repetitive)*3 I

1200 Volts

CES

±20 Volts

GES

1200 Amperes

CRM

4545 Watts

tot

*1

600 Amperes

E

*1

1200 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

20.9

32.6

46.0

72.6

86.0

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

27.257.681.898.6

0

Th

Tr1

Di1

Tr1

Di1

Tr2

Di2

Tr2

Di2

0

Tr1

Di1

Tr2

Di2

0

26.4

40.0

72.2

85.8

LABEL SIDE

93.9 53.2 22.9

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

0

2 06/11 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DXL-24S
Dual IGBTMOD™ NX-S Series Module

600 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 600A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 1400 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 600A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts

Emitter-Collector Voltage V

(Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 600A, — 72 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 3.3 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 60mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.85 2.30 Volts

CE(sat)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 60 nF

ies

VCE = 10V, VGE = 0V — — 12 nF

oes

— — 1.0 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts

EC

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 600A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 32 — µC

rr

VGE = ±15V, RG = 0Ω, — 75 — mJ

off

*1

Tj = 150°C, Inductive Load — 41 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 0.8 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

27.257.681.898.6
0

Tr1

Di1

Tr2

Di2

20.9

32.6

46.0

72.6

86.0

0

Th

Tr1

Di1

Tr1

Di1

Tr2

Di2

Tr2

Di2

0

26.4

40.0

72.2

85.8

LABEL SIDE

93.9 53.2 22.9

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

0

306/11 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DXL-24S
Dual IGBTMOD™ NX-S Series Module

600 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*2 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*2 R

Thermal Resistance, Junction to Case*2 R

Contact Thermal Resistance, R

Case to Heatsink*2 (Per 1 Module)

Q Per Inverter IGBT — — 0.033 K/W

th(j-c)

D Per Inverter FWDi — — 0.063 K/W

th(j-c)

Thermal Grease Applied — 0.007 — K/W

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal — — — mm

Terminal to Baseplate — — — mm

Clearance da Terminal to Terminal — — — mm

Terminal to Baseplate — — — mm

Weight m — 690 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm

Recommended Operating Conditons, Ta = 25°C

(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 0 — 6.8 Ω

*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

4 06/11 Rev. 3

= In(

R

25

)/( 1 –

50 T25 T50

1

)

MOUNTING SIDE

LABEL SIDE

+ : CONVEX

– : CONCAVE

X

MOUNTING SIDE

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

27.257.681.898.6

0

Th

Tr1

Tr1

Di1

Tr2

Di2

93.9 53.2 22.9

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

Tr1

Di1

Di1

Tr2

Tr2

Di2

Di2

Y

– : CONCAVE

+ : CONVEX

20.9

32.6

46.0

72.6

86.0

LABEL SIDE

0

0

26.4

40.0

72.2

85.8

0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DXL-24S
Dual IGBTMOD™ NX-S Series Module

600 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

VGE = 20V

15

1000

13.5

800

, (AMPERES)

C

600

400

200

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

VGE = 15V

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.5 1.0 1.5 2.0 2.5 3.0

EMITTER-COLLECTOR VOLTAGE, V

3

10

2

10

SWITCHING TIME, (ns)

1

10

-1

10

(TYPICAL)

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

t

d(off)

0

10

GATE RESISTANCE, R

Tj = 25°C

12

11

10

9

, (VOLTS)

EC

t

d(on)

VCC = 600V
V

= ±15V

GE

I

= 600A

C

T

= 150°C

j

Inductive Load

, (Ω)

G

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

3

10

, (nF)

2

10

res

, C

oes

, C

ies

1

10

0

10

CAPACITANCE, C

-1

10

10

3

10

(ns)

t

f

t

r

10

rr

(A), t

rr

REVERSE RECOVERY, I

1

2

10

1

10

10

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

0

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

VGE = 0V

C

ies

C

oes

C

res

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

1

0

10

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

2

10

1

10

VCC = 600V
V

= ±15V

GE

R

= 1.3Ω

G

T

= 150°C

j

Inductive Load

I

rr

t

rr

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

12001000800600400200

2

10

0

3

10

2

10

SWITCHING TIME, (ns)

1

10

10

20

16

, (VOLTS)

GE

12

8

4

GATE-EMITTER VOLTAGE, V

3

10

0

0

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 1200A

IC = 600A

IC = 240A

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

1

COLLECTOR CURRENT, IC, (AMPERES)

IC = 600A
V

CC

(TYPICAL)

t

d(off)

t

d(on)

2

10

GATE CHARGE VS. V

= 600V

t

t

VCC = 600V
V

= ±15V

GE

R

= 1.3Ω

G

T

= 150°C

j

Inductive Load

GE

f

r

10

500 1000 1500 2000

GATE CHARGE, QG, (nC)

3

506/11 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DXL-24S
Dual IGBTMOD™ NX-S Series Module

600 Amperes/1200 Volts

SWITCHING LOSS VS.

COLLECTOR CURRENT

2

10

, (mJ/PULSE)

off

, E

on

1

10

(TYPICAL)

VCC = 600V
V

R
T

L
Inductive Load

SWITCHING LOSS, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

3

10

, (mJ/PULSE)

rr

2

10

GATE RESISTANCE

VCC = 600V
V

= ±15V

GE

I

= 600A

C

T

= 150°C

j

L

= 50nH

s

Inductive Load

2

10

(TYPICAL)

E

REVERSE RECOVERY

SWITCHING LOSS, E

1

10

-1

10

GATE RESISTANCE, R

0

10

= ±15V

GE

= 1.3Ω

G

= 150°C

j

= 50nH

s

E
E

rr

, (Ω)

G

SWITCHING LOSS VS.

GATE RESISTANCE

3

10

VCC = 600V
V

GE

I

= 600A

C

T

= 150°C

j

L

= 50nH

2

10

1

10

10

s

Inductive Load

-1

, (mJ/PULSE)

off

, E

on

on

off

3

10

SWITCHING LOSS, E

IMPEDANCE CHARACTERISTICS

10-310

0

th(j-c')

10

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =

R

th(j-c)

• (NORMALIZED VALUE)

0.033°C/W

-2

10

th

(IGBT)

= R

th

R

th(j-c)

Z

0.063°C/W

(FWDi)

-3

10

1

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

= ±15V

0

10

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

(MAXIMUM)

-2

-1

10

=

=

-5

10

TIME, (s)

E

on

E

off

1

10

0

10

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

EMITTER CURRENT

(TYPICAL)

VCC = 600V
V

= ±15V

GE

R

= 1.3Ω

G

T

= 150°C

j

L

= 50nH

s

Inductive Load

1

EMITTER CURRENT, IE, (AMPERES)

2

10

E

rr

3

10

6 06/11 Rev. 3