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CM600DU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
TC Measured
Point
E
B
R
CM
S - NUTS
(3 TYP)
C
C2E1
Outline Drawing and Circuit Diagram
C2E1
E2
D
C
L
LABEL
T - (4 TYP.)
H
G2
E2
J
G2
E2
E1
G1
E1
G1
X
H
N
V - THICK x W - WIDE
TAB (4 PLACES)
M
F
E2
C1
25 25
Q Q
P
K K K
C1
F
G
Dual IGBTMOD™
F-Series Module
600 Amperes/ 250 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66± 0.01 93.0± 0.25
E 2.44± 0.01 62.0± 0.25
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
M 0.33 8.5
N 0.10 2.5
P 0.85 21.6
Q 0.98 25.0
R 0.86 21.75
SM 6 M 6
T 0.26 Dia. 6.5 Dia.
V 0.02 0.5
W 0.110 2.79
X 1.08 27.35
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600DU-5F is a
250V (V
), 600 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 600 5
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-5F
Dual IGBTMOD™ F-Series Module
600 Amperes/250 Volts
Absolute Maximum Ratings, T j = 25 °C unless otherwise specified
Ratings Symbol CM600DU-5F Units
Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25° C, Tj ≤ 150° C) P
j
stg
CES
GES
C
I
C(rms)
CM
E
I
E(rms)
EM
c
Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
250 Volts
± 20 Volts
600 Amperes
350 Amperes (rms)
1200* Amperes
600 Amperes
350 Amperes (rms)
1200* Amperes
1100 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES VGE
GE(th)
CE(sat)
VCE = V
, VGE = 0V ––1m A
CES
= V
, VCE = 0V ––0.5 µA
GES
IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts
IC = 600A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts
IC = 600A, VGE = 10V, Tj = 125°C – 1.1 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G
EC
VCC = 100V, IC = 600A, VGE = 10V – 2200 – nC
IE = 600A, VGE = 0V ––2.0 Volts
Dynamic Electrical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V ––11 nf
VCC = 100V, IC = 600A, –– 850 ns
V
= V
GE1
GE2
RG = 4.2⍀, –– 1100 ns
Inductive Load –– 500 ns
Switching Operation –– 300 ns
IE = 600A – 20.0 – µC
= 10V, –– 600 ns
––170 nf
––5.7 nf
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-5F
Dual IGBTMOD™ F-Series Module
600 Amperes/250 Volts
Thermal and Mechanical Characteristics, Tj = 25 ° C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Thermal Resistance, Junction to Case R
Q Per IGBT 1/2 Module ––0.11 ° C/W
th(j-c)
R Per FWDi 1/2 Module ––0.20 ° C/W
th(j-c)
th(c-f)
th(j-c')
Per Module, Thermal Grease Applied – 0.020 – °C/W
Q Per IGBT 1/2 Module ––0.05 ° C/W
TC Reference Point Under Chip
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
900
, (AMPERES)
C
VGE = 15V
10
8
6.5
Tj = 25oC
600
300
COLLECTOR CURRENT, I
0
012345
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25° C
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
0481 21 62 0
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 1200A
IC = 240A
IC = 600A
6.25
5.75
5.25
TRANSFER CHARACTERISTICS
(TYPICAL)
1200
VCE = 10V
Tj = 25° C
= 125° C
T
900
6
, (AMPERES)
C
j
2.0
1.6
, (VOLTS)
CE(sat)
1.2
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
VGE = 15V
Tj = 25° C
= 125° C
T
j
(TYPICAL)
600
0.8
5.5
5
300
COLLECTOR CURRENT, I
0
024681 0
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
4
10
Tj = 25° C
3
10
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
(TYPICAL)
COLLECTOR-EMITTER
0.4
SATURATION VOLTAGE, V
0
0 400 800
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
0
10
(TYPICAL)
3
10
, (nF)
res
2
10
, C
oes
, C
ies
1
10
CAPACITANCE, C
VGE = 0V
f = 1MHz
0
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1200
CE
C
ies
C
oes
C
res
1
10
2
10
3
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-5F
Dual IGBTMOD™ F-Series Module
600 Amperes/250 Volts
SWITCHING CHARACTERISTICS
3
10
2
10
SWITCHING TIME, (ns)
1
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
-3
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
HALF-BRIDGE
(TYPICAL)
t
d(off)
t
d(on)
t
f
t
r
VCC = 100V
V
R
T
j
Inductive Load
2
10
TRANSIENT THERMAL
(IGBT)
-2
10
10
th(j-c)
-1
= 0.11° C/W
= ± 10V
GE
= 4.2 Ω
G
= 125°C
0
10
REVERSE RECOVERY CHARACTERISTICS
3
10
di/dt = -600A/
T
= 25
j
, (ns)
rr
2
10
REVERSE RECOVERY TIME, t
1
10
3
10
1
10
IMPEDANCE CHARACTERISTICS
1
10
-1
10
-2
10
-3
10
1
th(j-c)
10
Single Pulse
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
(TYPICAL)
µsec
°C
V
= 100V
CC
V
=
± 10V
GE
R
= 4.2
G
T
= 25
° C
j
Inductive Load
2
EMITTER CURRENT, IE, (AMPERES)
10
TRANSIENT THERMAL
(FWDi)
10
= 25°C
-2
10
th(j-c)
-1
10
= 0.20° C/W
3
, (AMPERES)
rr
2
20
16
, (VOLTS)
GE
12
10
t
rr
I
rr
10
GATE CHARGE, V
IC = 600A
VCC = 50V
GE
VCC = 100V
8
Ω
10
3
10
0
1
10
10
10
4
GATE-EMITTER VOLTAGE, V
1
REVERSE RECOVERY CURRENT, I
0
0 1500 3000
-1
-2
GATE CHARGE, QG, (nC)
4500
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
4
4