C&H Technology CM600DU-24NFH User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600DU-24NFH

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

M M

L

E

U

W

Y

L

T - (4 TYP)

C

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.01 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.83 21.2

G 0.28 7.0

H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

L 0.35 9.0

M 0.33 8.5

N 0.69 17.5

P 0.85 21.5

Tr 2

C2E1 C1

S - NUTS (3 TYP)

Z
K

E2

Di2

G

D

E2

Z
K

LABEL

Di1

Tr 1

G2E2E1G1

H

J

B

H

N

PQQ

G

Z
K

G2
E2

C1

E1
G1

Dimensions Inches Millimeters

Q 0.98 25.0

R 1.23 31.4

S M6 Metric M6

T 0.26 Dia. 6.5 Dia.

U 0.4 10.0

V 0.16 4.0

W 0.87 22.2

X 0.72 18.25

Y 0.36 9.25

Z 0.71 18.0

AA 0.11 2.8

AB 0.29 7.5

AC 0.21 5.3

AD 0.47 12.0

V
AA

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

R

X

AC

MAB

F

V

AD

Dual IGBTMOD™
NFH-Series Module

600 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

£ Low E
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-24NFH is a 1200V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 24

SW(off)

Free-Wheel Diode

Heat Sinking

), 600 Ampere Dual

V

CES

107/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM600DU-24NF Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 25°C) IC 600* Amperes

Peak Collector Current ICM 1200* Amperes

Emitter Current** (TC = 25°C) IE 600* Amperes

Peak Emitter Current** IEM 1200* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1550 Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 3700 Watts

Mounting Torque, M6 Main Terminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 580 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 600A, VGE = 15V, Tj = 125°C — 5.0 — Volts

Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 2700 — nC

Emitter-Collector Voltage** VEC IE = 600A, VGE = 0V — — 3.5 Volts

VCE = V

CES

VGE = V

GES

IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts

CE(sat)

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 2.0 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr VCC = 600V, IC = 600A, — — 120 ns

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 150 ns

Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns

Diode Reverse Recovery Charge** Qrr IE = 600A — 28 — µC

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 95 nF

ies

VCE = 10V, VGE = 0V — — 8.0 nF

oes

— — 1.8 nF

res

— — 400 ns

d(on)

d(off)

V

GE1

= V

= 15V, RG = 0.52Ω, — — 700 ns

GE2

rating.

j(max)

2 07/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Contact Thermal Resistance R

External Gate Resistance RG 0.52 — 5.2 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.083 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.15 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, — — 0.034 °C/W

th(j-c)

'D Per FWDi 1/2 Module, TC Reference — — 0.06 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W

th(c-f)

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

1000

Tj = 25

o

VGE = 20V

C

15

800

, (AMPERES)

C

600

400

200

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25oC

IC = 1200A

IC = 600A

IC = 240A

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

14

13

12

11

10

9

8

1200

VGE = 10V

1000

800

, (AMPERES)

C

600

400

200

COLLECTOR CURRENT, I

0

0

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

4

10

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 1 3 42 5

EMITTER-COLLECTOR VOLTAGE, V

(TYPICAL)

Tj = 25oC

= 125oC

T

j

5

10

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

Tj = 25oC

= 125oC

T

j

(TYPICAL)

15

EC

, (VOLTS)

20

SATURATION VOLTAGE CHARACTERISTICS

9

8

7

, (VOLTS)

6

CE(sat)

5

4

3

COLLECTOR-EMITTER

2

1

SATURATION VOLTAGE, V

0

3

10

, (nF)

2

10

res

, C

oes

, C

1

ies

10

0

10

CAPACITANCE, C

-1

10

10

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25oC

= 125oC

T

j

200

0

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

400

COLLECTOR-CURRENT, IC, (AMPERES)

VGE = 0V

600

CAPACITANCE VS. V

(TYPICAL)

0

10

10

1

CE

C

C

C

ies

oes

res

1200800 1000

2

10

307/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/1200 Volts

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

t

d(off)

t

d(on)

(TYPICAL)

VCC = 600V
V
R
T

0

10

1

10

COLLECTOR CURRENT, I

SWITCHING LOSS VS.

COLLECTOR CURRENT

2

10

VCC = 600V
V

GE

R

= 0.52Ω

G

T

= 125°C
Inductive Load
C Snubber at Bus

1

10

0

10

1

10

j

COLLECTOR CURRENT, I

, (mJ/PULSE)

SW(off)

, E

SW(on)

SWITCHING LOSS, E

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

(TYPICAL)

= ±15V

E

SW(on)

E

SW(off)

GATE RESISTANCE

E

rr

2

10

2

10

(TYPICAL)

Inductive Load

, (AMPERES)

C

, (AMPERES)

C

= ±15V

GE

= 1.0Ω

G

= 125°C

j

REVERSE RECOVERY CHARACTERISTICS

3

10

VCC = 600V
V

= ±15V

GE

R

= 1.0Ω

2

10

G

T

= 25°C

j

Inductive Load

, (ns)

rr

t

r

t

f

(TYPICAL)

3

10

I

rr

t

rr

10

, (AMPERES)

2

rr

20

16

, (VOLTS)

GE

12

GATE CHARGE VS. V

IC = 600A

GE

VCC = 400V

VCC = 600V

8

REVERSE RECOVERY TIME, t

1

3

10

3

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

, (mJ/PULSE)

SW(off)

, E

1

10

SW(on)

SWITCHING LOSS, E

0

10

-1

10

IMPEDANCE CHARACTERISTICS

-3

10

0

th(j-c')

10

2

10

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

VCC = 600V
V

= ±15V

GE

I

= 600A

C

T

= 125°C

j

Inductive Load
C Snubber at Bus

0

10

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

(IGBT & FWDi)

-2

10

-1

10

E

SW(on)

E

SW(off)

10

0

10

3

10

1

10

1

10

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

0

10

, (mJ/PULSE)

rr

10

REVERSE RECOVERY

SWITCHING LOSS, E

10

1000 2000 40003000

0

REVERSE RECOVERY SWITCHING LOSS VS.

2

1

0

1

10

EMITTER CURRENT, IE, (AMPERES)

GATE CHARGE, QG, (nC)

EMITTER CURRENT

(TYPICAL)

E

rr

VCC = 600V
V

= ±15V

GE

R

= 0.52Ω

G

T

= 125°C

j

Inductive Load
C Snubber at Bus

2

10

3

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

-1

10

VCC = 600V
V
I

E

T
Inductive Load
C Snubber at Bus

0

10

GATE RESISTANCE, R

= ±15V

GE

= 600A
= 125°C

j

, (Ω)

G

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

th(j-c)

• (NORMALIZED VALUE)

0.083°C/W

-2

10

th

(IGBT)

= R

th

R

=

th(j-c)

Z

0.15°C/W
(FWDi)

-3

10

1

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-5

10

TIME, (s)

-4

10

-1

10

-2

10

-3

10

-3

10

4 07/11 Rev. 2