C&H Technology CM600DU-12NFH User Manual

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Suite 108
Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM600DU-12NFH

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

M M

L

E

U

W

Y

L

T - (4 TYP)

C

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.01 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.83 21.2

G 0.28 7.0

H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

L 0.35 9.0

M 0.33 8.5

N 0.69 17.5

P 0.85 21.5

Tr 2

C2E1 C1

S - NUTS (3 TYP)

Z
K

E2

Di2

G

D

E2

Z
K

LABEL

Di1

Tr 1

G2E2E1G1

H

J

B

H

N

PQQ

G

Z
K

G2
E2

C1

E1
G1

Dimensions Inches Millimeters

Q 0.98 25.0

R 1.23 31.4

S M6 Metric M6

T 0.26 Dia. 6.5 Dia.

U 0.4 10.0

V 0.16 4.0

W 0.87 22.2

X 0.72 18.25

Y 0.36 9.25

Z 0.71 18.0

AA 0.11 2.8

AB 0.29 7.5

AC 0.21 5.3

AD 0.47 12.0

V
AA

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

R

X

AC

MAB

F

V

AD

Dual IGBTMOD™
NFH-Series Module

600 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low V
£ Low E
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-12NFH is a 600V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 12

CE(sat)

SW(off)

Free-Wheel Diode

Heat Sinking

), 600 Ampere Dual

V

CES

07/11 Rev. 2

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Item Symbol Rating Units

Collector-Emitter Voltage (G-E Short-circuited) V

Gate-Emitter Voltage (C-E Short-circuited) V

Collector Current (Operation)*5 IC 600 Amperes

Collector Current (Operation)*5 I

Collector Current (Pulse, Repetitive)*4 I

Total Power Dissipation (TC = 25°C)

Total Power Dissipation (TC' = 25°C)

*2,*5

P

*3,*5

P

Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I

Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I

Emitter Current (Free Wheeling Diode Forward Current, Operation, Pulse, Repetitive)*4 I

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
*3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {R
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

} should be measured just under the chips.

th(s-a)

600 Volts

CES

±20 Volts

GES

400 Amperes

C(rms)

1200 Amperes

CRM

1130 Watts

tot

' 2350 Watts

tot

*1

600 Amperes

E

*1

400 Amperes

E(rms)

*1

1200 Amperes

ERM

–40 to 125 °C

stg

2500 Volts

ISO

29.4

0

0 0

32.0

44.4

0

Each mark points to the center position of each chip.

Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi

44.2

Tr2

Tr2

Di2

Di2

C2E1 C1E2

29.4

44.2

77.2

Tr1

Di1

Di1

Tr1

LABEL SIDE

64.8

27.3

G2E2E1G1

42.1

2

07/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 600A, VGE = 15V, Tj = 125°C*6 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V — 3720 — nC

Turn-on Delay Time t

Rise Time tr VCC = 300V, IC = 600A, — — 250 ns

Turn-off Delay Time t

Fall Time tf Inductive Load Switching Operation — — 150 ns

Emitter-Collector Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 600A, — 11 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Gate Resistance rg Per Switch — 0.8 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

±VGE = V

GES

IC = 60mA, VCE = 10V 5.0 6.0 7.0 Volts

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C*6 — 2.0 2.7 Volts

CE(sat)

— — 166 nF

ies

VCE = 10V, VGE = 0V — — 11 nF

oes

— — 6.0 nF

res

— — 650 ns

d(on)

VGE = ±15V, RG = 2.0Ω, — — 800 ns

d(off)

*1

IE = 600A, VGE = 0V*6 — 2.0 2.6 Volts

EC

*1

VCC = 300V, IE = 600A, VGE = ±15V — — 200 ns

rr

*1

RG = 2.0Ω, Inductive Load — 11 — µC

rr

VGE = ±15V, RG = 2.0Ω, — 27 — mJ

off

*1

Tj = 125°C, Inductive Load — 6.3 — mJ

rr

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

07/11 Rev. 2

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*2 R

Thermal Resistance, Junction to Case*2 R

Contact Thermal Resistance, R

Case to Heatsink*2 (Per 1 Module)

Thermal Resistance, Junction to Case*3 R

Thermal Resistance, Junction to Case*3 R

Q Per IGBT — — 0.11 K/W

th(j-c)

D Per FWDi — — 0.12 K/W

th(j-c)

Thermal Grease Applied — 0.02 — K/W

th(c-f)

*7

Q Per IGBT — — 0.053 K/W

th(j-c')

D Per FWDi — — 0.078 K/W

th(j-c')

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb

Weight m — 580 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 -100 — +100 µm

Recommended Operating Conditons, Ta = 25°C

(DC) Supply Voltage VCC Applied Across C1-E2 — 300 400 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 1.0 — 10 Ω

*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {R
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

} should be measured just under the chips.

th(s-a)

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

29.4

0

0 0

32.0

44.4

44.2

Tr2

Tr2

Di2

Di2

77.2

Tr1

Di1

Di1

Tr1

27.3

G2E2E1G1

42.1

Y

BOTTOM

LABEL SIDE

+ CONVEX

BOTTOM

– CONCAVE

X

– CONCAVE

+ CONVEX

3 mm

BOTTOM

4

C2E1 C1E2

0

Each mark points to the center position of each chip.

Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi

29.4

44.2

64.8

LABEL SIDE

07/11 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

1000

800

, (AMPERES)

C

600

400

200

COLLECTOR CURRENT, I

0

0 1 2 3 4 5

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FORWARD CHARACTERISTICS

4

10

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.5 1.5 2.0 2.51.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

SWITCHING CHARACTERISTICS

4

10

VCC = 300V
V

= ±15V

GE

I

= 600A

C

= 125°C

T

j

Inductive Load

3

10

SWITCHING TIME, (ns)

2

10

-1

10

15

VGE = 20V

9.5

8.5

8

7.5

7

FREE-WHEEL DIODE

(TYPICAL)

Tj = 25°C

= 125°C

T

j

HALF-BRIDGE

(TYPICAL)

0

10

GATE RESISTANCE, RG, (Ω)

10

9

10

13

t

t

t

d(off)

t

d(on)

r

f

1

11

EC

Tj = 25°C

, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

3.0

2.5

, (VOLTS)

2.0

CE(sat)

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

200

0

COLLECTOR-CURRENT, IC, (AMPERES)

3

10

VGE = 0V

, (nF)

res

2

, C

10

oes

, C

ies

1

10

CAPACITANCE, C

0

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

, (AMPERES), t

rr

10

I

rr

t

rr

2

600

400

CAPACITANCE VS. V

(TYPICAL)

0

10

10

(TYPICAL)

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

1200800 1000

0

CE

3

10

C

ies

2

10

2

10

SWITCHING TIME, (ns)

1

10

10

C

oes

C

res

1

20

16

, (VOLTS)

GE

12

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 1200A

IC = 600A

IC = 240A

0 642 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

1

COLLECTOR CURRENT, IC, (AMPERES)

(TYPICAL)

t

d(off)

t

d(on)

t

f

t

r

VCC = 300V
V
R
T
Inductive Load

2

10

GATE CHARGE VS. V

= ±15V

GE

= 2.0Ω

G

= 125°C

j

GE

10

IC = 600A

= 25°C

T

j

VCC = 200V

VCC = 300V

3

8

VCC = 300V
V

= ±15V

GE

R

= 2.0Ω

G

= 25°C

T

j

2

10

Inductive Load

3

10

REVERSE RECOVERY, I

1

2

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

4

GATE-EMITTER VOLTAGE, V

0

1000 2000 3000 4000 5000

0

GATE CHARGE, QG, (nC)

07/11 Rev. 2

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

VCC = 300V
V

= ±15V

GE

R

= 2.0Ω

G

, (mJ)

= 125°C

T

rr

, (mJ)

, E

SWITCHING ENERGY, E

j

off

Inductive Load

E

on

1

10

REVERSE RECIVERY ENERGY, E

0

10

on

E

off

E

rr

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, I

10

2

, (AMPERES)

E

3

10

10

, (mJ)

rr

, (mJ)

off

, E

on

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

1

VCC = 300V
V

= ±15V

GE

I

= 600A

C

= 125°C

T

j

Inductive Load

0

-1

10

0

10

GATE RESISTANCE, RG, (Ω)

10-310

0

th(j-c')

10

-1

10

• (NORMALIZED VALUE)

-2

10

th

E

on

E

off

E

rr

1

10

10

= R

th

Z

-3

10

2

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

-2

-1

10

10

Single Pulse

= 25°C

T

C'

Per Unit Base =
R

=

th(j-c')

0.053°C/W
(IGBT)
R

=

th(j-c')

0.078°C/W
(FWDi)

-5

10

10

TIME, (s)

0

1

10

-1

10

-2

10

-3

-4

10

-3

10

6

07/11 Rev. 2