C&H Technology CM600DU-12NFH User Manual
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Suite 108
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Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
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Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM600DU-12NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
M M
L
E
U
W
Y
L
T - (4 TYP)
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.01 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.83 21.2
G 0.28 7.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
L 0.35 9.0
M 0.33 8.5
N 0.69 17.5
P 0.85 21.5
Tr 2
C2E1 C1
S - NUTS (3 TYP)
Z
K
E2
Di2
G
D
E2
Z
K
LABEL
Di1
Tr 1
G2E2E1G1
H
J
B
H
N
PQQ
G
Z
K
G2
E2
C1
E1
G1
Dimensions Inches Millimeters
Q 0.98 25.0
R 1.23 31.4
S M6 Metric M6
T 0.26 Dia. 6.5 Dia.
U 0.4 10.0
V 0.16 4.0
W 0.87 22.2
X 0.72 18.25
Y 0.36 9.25
Z 0.71 18.0
AA 0.11 2.8
AB 0.29 7.5
AC 0.21 5.3
AD 0.47 12.0
V
AA
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
R
X
AC
MAB
F
V
AD
Dual IGBTMOD™
NFH-Series Module
600 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low V
£ Low E
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-12NFH is a 600V
(V
CES
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 600 12
CE(sat)
SW(off)
Free-Wheel Diode
Heat Sinking
), 600 Ampere Dual
V
CES
07/11 Rev. 2
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Item Symbol Rating Units
Collector-Emitter Voltage (G-E Short-circuited) V
Gate-Emitter Voltage (C-E Short-circuited) V
Collector Current (Operation)*5 IC 600 Amperes
Collector Current (Operation)*5 I
Collector Current (Pulse, Repetitive)*4 I
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TC' = 25°C)
*2,*5
P
*3,*5
P
Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I
Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I
Emitter Current (Free Wheeling Diode Forward Current, Operation, Pulse, Repetitive)*4 I
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
*3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance {R
*4 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
j(max)
j(max)
) rating.
rating.
} should be measured just under the chips.
th(s-a)
600 Volts
CES
±20 Volts
GES
400 Amperes
C(rms)
1200 Amperes
CRM
1130 Watts
tot
' 2350 Watts
tot
*1
600 Amperes
E
*1
400 Amperes
E(rms)
*1
1200 Amperes
ERM
–40 to 125 °C
stg
2500 Volts
ISO
29.4
0
0 0
32.0
44.4
0
Each mark points to the center position of each chip.
Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi
44.2
Tr2
Tr2
Di2
Di2
C2E1 C1E2
29.4
44.2
77.2
Tr1
Di1
Di1
Tr1
LABEL SIDE
64.8
27.3
G2E2E1G1
42.1
2
07/11 Rev. 2
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