C&H Technology CM50TU-34KA User Manual

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CM50TU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
T
C
Measuring
Point
EB
W - THICK x X - WIDE
TAB (12 PLACES)
C
S - NUTS
(5 TYP)
G
CM
UPEUP
L
GUN
J
K
N
GVP
N
E
UN
U
J
L LN NAL
K
R
P
WPEVPGWP
E
NL L
M
GVNEVNEWN
V
D
GWN
W
J
T - (4 TYP.)
P
Q
R
V
F
T
C
Measuring Point
H
G
Six IGBTMOD™ KA-Series Module
50 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
P
U
P
G
E
U
P
U
U
N
G
EUN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0 B 4.02 102.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.54±0.01 90.0±0.25 E 3.15±0.01 80.0±0.25 F 0.16 4.0 G 1.02 26.0 H 0.31 8.1 J 0.91 23.0 K 0.47 12.0 L 0.43 11.0
V
P
G
E
V
P
V
V
N
G
V
N
E
W
P
G
E
W
P
W
G
W
N
W
N
E
Dimensions Inches Millimeters
M 0.57 14.4 N 0.85 21.7 P 0.67 17.0 Q 1.91 48.5 R 0.15 3.75 SM5 M5
T 0.26 Dia. 6.5 Dia. V 0.03 0.8 W 0.02 0.5 X 0.110 2.79
Features:
Low Drive PowerLow V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor ControlMotion/Servo ControlUPSWelding Power SuppliesLaser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM50TU-34KA is a 1700V (V
), 50 Ampere Six-
CES
IGBT IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 50 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA Six IGBTMOD™ KA-Series Module
50 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50TU-34KA Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M5 Main Ter minal 31 in-lb Mounting Torque, M5 Mounting 31 in-lb Weight 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C 1700 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
600 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 5mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 50A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 50A, VGE = 15V, Tj = 125°C– 3.8 Volts Total Gate Charge Q Emitter-Collector Voltage* V
G
EC
VCC = 1000V, IC = 50A, VGE = 15V 225 nC
IE = 50A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 50A, VGE = 0V, Tj = 125°C– 2.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switch Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V 1.2 nf
VCC = 1000V, IC = 50A, 100 ns
V
= V
GE1
= 15V, 100 ns
GE2
RG = 6.3, Resistive 400 ns
Inductive Load 800 ns
Switching Operation 200 ns
IE = 50A 3.9 µC
––7.0 nf
––0.38 nf
2
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA Six IGBTMOD™ KA -Series Module
50 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R Thermal Resistance R
* If you use this value, R
should be measured just under the chips.
th(f-a)
QPer IGBT 1/6 Module 0.21 °C/W
th(j-c)
DPer FWDi 1/6 Module 0.47 °C/W
th(j-c)
th(c-f)
th(j-c')
Per Module, Thermal Grease Applied 0.09 °C/W
QT
Measured Point 0.17* °C/W
c
(Under Chips - IGBT Part)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
80
, (AMPERES)
C
60
40
Tj = 25
VGE = 20V
o
14
12
15
C
11
10
9
20
COLLECTOR CURRENT, I
0
0246810
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
COLLECTOR-EMITTER
(TYPICAL)
Tj = 25°C
IC = 100A
IC = 50A
IC = 20A
051015 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C
= 125°C
T
j
(TYPICAL)
100
80
, (AMPERES)
C
60
TRANSFER CHARACTERISTICS
VCE = 10V
Tj = 25°C
= 125°C
T
j
(TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS
6
)
5
, (VOLTS
4
CE(sat)
3
40
8
20
COLLECTOR CURRENT, I
0
051015 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
12345
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
(TYPICAL)
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
020406080
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
1
10
, (nF)
res
0
, C
10
oes
, C
ies
-1
10
CAPACITANCE, C
VGE = 0V
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
0
10
100
CE
C
ies
C
oes
C
res
1
10
2
10
3
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-34KA Six IGBTMOD™ KA-Series Module
50 Amperes/1700 Volts
SWITCHING CHARACTERISTICS
4
10
VCC = 1000V V
= ±15V
GE
R
= 6.3
G
3
10
T
= 125°C
j
INDUCTIVE LOAD
2
10
SWITCHING TIME, (ns)
1
10
0
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
-3
10
10
1
th(j-c)
10
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
HALF-BRIDGE
(TYPICAL)
t
f
t
d(off)
t
d(on)
t
r
1
10
TRANSIENT THERMAL
(IGBT)
-2
-1
10
= 0.21°C/W
th(j-c)
REVERSE RECOVERY CHARACTERISTICS
3
10
VCC = 1000V V
GE
R
= 6.3
G
, (ns)
rr
T
= 125°C
j
INDUCTIVE LOAD
2
10
REVERSE RECOVERY TIME, t
1
2
10
10
0
10
IMPEDANCE CHARACTERISTICS
0
10
1
10
-1
10
-2
10
-3
10
1
th(j-c)
10
Single Pulse T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
(TYPICAL)
= ±15V
t
rr
I
rr
1
EMITTER CURRENT, IE, (AMPERES)
10
TRANSIENT THERMAL
(FWDi)
10
= 25°C
-2
10
th(j-c)
-1
10
= 0.47°C/W
2
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
1
10
8
4
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
0
1
10
10
10
0
0 100 200
-1
-2
GATE CHARGE, V
IC = 50A
GATE CHARGE, QG, (nC)
GE
VCC = 800V
VCC = 1000V
300
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
-4
10
-3
10
-3
10
4
4
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