C&H Technology CM50TF-24H User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM50TF-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

X

Z - M4 THD
(7 TYP.)

BuPEuPBvPEv PBwPEwP

uNEuNBvNEvNBwNEwN

B

N

W

AA

.110 TAB

H

u

P

N

L

BvP

BvN

D

P

N

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.02±0.02 102.0±0.5
B 3.58±0.02 91.0±0.5
C 3.15±0.01 80.0±0.25
D 2.913±0.01 74.0±0.25
E 1.69 43.0
F 1.18 +0.06/-0.02 30 +1.5/-0.5
G 1.18 30.0
H 1.16 29.5

J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0

G

U

F

BuP

EuP

BuN

EuN

C

QXQ

UVW

M M

EvP

EvN

XN

v

Dimensions Inches Millimeters

P 0.65 16.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.32 8.1

W 0.24 Rad. Rad. 6.0

X 0.24 6.0
Y 0.22 Dia. Dia. 5.5

Z M4 Metric M4
AA 0.08 2.0
AB 0.28 7.0

AA

S

P

P

G

N

R

T

L

V

BwP

EwP

BwN

EwN

J

K

Y DIA. (4 TYP.)

AB

w

B

E

Six-IGBT IGBTMOD™
H-Series Module

50 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,

P

N

offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

(135ns) Free-Wheel Diode

□ High Frequency Operation

(20-25kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-24H
is a 1200V (V

), 50 Ampere

CES

Six-IGBT IGBTMOD™ Power
Module.

Type Current Rating V

Amperes Volts (x 50)

CM 50 24

CES

335

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-24H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM50TF-24H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M4 Mounting Screws – 13 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 540 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts

50 Amperes

100* Amperes

50 Amperes

100* Amperes

400 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 50A, VGE = 15V – 2.5 3.4** Volts

m

IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 600V, IC = 50A, VGS = 15V – 250 – nC

IE = 50A, VGS = 0V – – 3.4 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 3.5 nF

VCC = 600V, IC = 50A, – – 200 ns

V

= V

GE1

= 15V, RG = 6.3Ω – – 150 ns

GE2

IE = 50A, diE/dt = –100A/µs – – 250 ns
IE = 50A, diE/dt = –100A/µs – 0.37 –

–– 10nF

– – 2 nF
– – 80 ns

– – 350 ns

µ

C

A

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.033 °C/W

Per IGBT – – 0.31 °C/W

Per FWDi – – 0.70 °C/W

336

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-24H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

100

Tj = 25oC
VGE = 20V

80

, (AMPERES)

C

60

40

20

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

15

7

COLLECTOR-EMITTER

(TYPICAL)

12

11

10

9

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 100A

IC = 50A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

(TYPICAL)

t

f

t

r

IC = 20A

VCC = 600V
V

= ±15V

GE

= 6.3Ω

R

G

= 125°C

T

j

1

10

TRANSFER CHARACTERISTICS

(TYPICAL)

100

VCE = 10V

80

, (AMPERES)

C

60

Tj = 25°C
T

= 125°C

j

40

20

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

I

rr

t

rr

(TYPICAL)

(TYPICAL)

2

10

Tj = 25°C

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

1

10

0

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

020406080

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V
f = 1MHz

-1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 50A

0

10

GATE CHARGE, V

VCC = 400V

CE

1

10

GE

VCC = 600V

C

C

C

100

ies

oes

res

2

10

8

REVERSE RECOVERY TIME, t

2

10

1

10

10

di/dt = -100A/µsec

= 25°C

T

j

0

EMITTER CURRENT, IE, (AMPERES)

10

1

2

10

10

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

0

0 100 200

GATE CHARGE, QG, (nC)

300 400

337

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-24H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.31°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.7°C/W

10

0

1

10

-1

10

-2

10

-3

-4

10

-3

10

338