C&H Technology CM50TF-12H User Manual

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Suite 108
Minnetonka, MN 55345

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM50TF-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
B
C

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P

EJ

N

N

S - DIA.
(2 TYP.)

G

P

P

(BuP)*

GuP

EuP

u

(BuN)

GuN

EuN

N

* Parentheses indicate module marking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.00 127.0
B 4.33±0.01 110.0±0.3
C 3.86 98.0
D 2.20 56.0
E 1.57 40.0
F 1.12 28.5
G 1.04 26.5
H 1.01 25.6

J 0.98 25.0

uvw

B

uNEu

R

(BvP)

GvP

(BvN)

GvN

NBvNEvNBwNEwN

F F KM

R

L

.250 TAB

EvP

v

EvN

Dimensions Inches Millimeters

R

L

(BwP)

(BwN)

K 0.85 21.5
L 0.83 21.0
M 0.75 19.0
N 0.71 18.0
P 0.69 17.5
Q 0.65 16.5
R 0.30 7.5
S 0.22 Dia. Dia. 5.5

Q

.110 TAB

R

GwP

EwP

w

GwN

EwN

D

H

Six-IGBT IGBTMOD™
H-Series Module

50 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (V
IGBT IGBTMOD™ Power Module.

Type Current Rating V

CM 50 12

CE(sat)

(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 50 Ampere Six-

CES

Amperes Volts (x 50)

CES

307

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM50TF-12H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 390 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts

50 Amperes

100* Amperes

50 Amperes

100* Amperes

250 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5

GES

IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 50A, VGE = 15V – 2.1 2.8** Volts

µ

A

IC = 50A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 300V, IC = 50A, VGS = 15V – 150 – nC

IE = 50A, VGS = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = 1MHz – – 1.8 nF

VCC = 300V, IC = 50A, – – 300 ns

V

= V

GE1

= 15V, RG = 13Ω – – 200 ns

GE2

IE = 50A, diE/dt = –100A/µs – – 110 ns
IE = 50A, diE/dt = –100A/µs – 0.14 –

– – 5 nF

– – 1 nF
– – 200 ns

– – 300 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.042 °C/W

Per IGBT – – 0.50 °C/W

Per FWDi – – 1.00 °C/W

308

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

100

Tj = 25oC

VGE = 20V

15

12

75

, (AMPERES)

C

11

50

10

25

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 100A

IC = 50A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

t

f

t

r

(TYPICAL)

IC = 20A

VCC = 300V
V

= ±15V

GE

= 13Ω

R

G

T

= 125°C

j

1

10

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

100

75

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C
T

= 125°C

j

5

4

, (VOLTS)

CE(sat)

3

50

2

COLLECTOR-EMITTER

25

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

2

10

Tj = 25°C

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

2

10

1

10

10

di/dt = -100A/µsec
T

= 25°C

j

0

(TYPICAL)

(TYPICAL)

I

t

1

EMITTER CURRENT, IE, (AMPERES)

10

rr

rr

10

1

SATURATION VOLTAGE, V

0

0 25 50 75 100

1

10

, (nF)

res

, C

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

-1

10

1

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

0

10

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

-1

10

2

0

0 50 100 150 200 250

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V
f = 1MHz

0

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

GATE CHARGE, V

VCC = 200V

GATE CHARGE, QG, (nC)

CE

1

10

GE

VCC = 300V

C

ies

C

oes

C

res

2

10

309

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.5°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 1.0°C/W

10

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

310