C&H Technology CM450HA-5F User Manual

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM450HA-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

B

E

S

R

R

P - THD.

(2 TYP.)

K

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.82 97.0

B 3.15 80.0

C 0.69 17.5

D 1.14 29.0

E 1.04 26.5

F 1.89 48.0

G 0.63 16.0

H 0.24 6.0

J 0.26 6.7

E

G

H

J

E

E

G

D

E

LABEL

C

C

N - DIA.

(2 TYP.)

Dimensions Inches Millimeters

K 1.14 29.0

L 1.42 36.0

M 0.28 7.0

N 0.26 6.5

P M4 Metric M4

Q M6 Metric M6

R 0.51 13.0

S 0.35 9.0

G

C

Q - THD.

(2 TYP.)

F

L

M

Trench Gate Design
Single IGBTMOD™

450 Amperes/ 250 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration, with a reverse
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation

□ Isolated Baseplate for Easy

Applications:

□ DC Chopper
□ UPS
□ Forklift

Ordering Information:

Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM450HA-5F is a 250V (V
450 Ampere Single IGBTMOD™
Power Module.

Type Amperes Volts (x 50)

CM 450 5

CE(sat)

Free-Wheel Diodes

(20-25 kHz)

Heat Sinking

Current Rating V

CES

CES

),

365

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM450HA-5F
Trench Gate Design Single IGBTMOD™

450 Amperes/250 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol CM450HA-5F Units

Junction Temperature T

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current I

Peak Collector Current I

Diode Forward Current I

Diode Forward Surge Current I

Power Dissipation P

j

stg

CES

GES

C

CM

FM

FM

d

Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb

Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb

Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb

Module Weight (Typical) — 270 Grams

V Isolation Voltage V

RMS

-40 to 150 °C

-40 to 125 °C

250 Volts

±20 Volts

450 Amperes

900* Amperes

450 Amperes

900* Amperes

735 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

CES

GES

GE(th)

CE(sat)

VCE = V

VGE = V

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts

IC = 450A, VGE = 10V, — 1.2 1.7 Volts

IC = 450A, VGE = 10V, Tj = 150°C — 1.1 — Volts

Total Gate Charge Q

Diode Forward Voltage V

G

FM

VCC = 50V, IC = 450A, VGS = 15V — 1760 — nC

IE = 450A, VGS = 0V — — 2.0 Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

d(on)

Load Rise Time t

Switching Turn-off Delay Time t

d(off)

Times Fall Time t

Diode Reverse Recovery Time t

Diode Reverse Recovery Charge Q

IES

OES

RES

r

F

rr

rr

VGE = 0V, VCE = 10V — — 6 nF

VCC = 50V, IC = 450A, — — 2700 ns

V

= V

GE1

= 10V, RG = 5.6Ω, — — 900 ns

GE2

Resistive Load — — 500 ns

IE = 450A, diE/dt = -900A/ms — — 300 ns

IE = 450A, diE/dt = -900A/ms — 7.6 — µC

— — 132 nF

— — 4.5 nF

— — 1200 ns

Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

th(j-c)

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied — — 0.090 °C/W

Per IGBT — — 0.17 °C/W

Per Free Wheel Diode — — 0.23 °C/W

366

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM450HA-5F
Trench Gate Design Single IGBTMOD™

450 Amperes/250 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1000

Tj = 25oC

VGE = 15V

800

, (AMPERES)

C

600

400

200

COLLECTOR CURRENT, I

0

012345

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 5 10 15

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

10

VCC = 100V
V

GE

R

= 5.6Ω

G

T

= 125°C

j

3

10

SWITCHING TIME, (ns)

2

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

= ±10V

t

d(off)

t

d(on)

t

f

t

r

(TYPICAL)

5.75

10
8
6

5.5

5.25

5.0

4.5

4.75

IC = 450A

IC = 900A

IC = 180A

2

10

3

10

TRANSFER CHARACTERISTICS

(TYPICAL)

1000

VCE = 10V

Tj = 25°C
T

= 125°C

800

, (AMPERES)

C

j

600

400

200

COLLECTOR CURRENT, I

0

0246810

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

4

10

Tj = 25°C

3

10

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0.6 0.8 1.0 1.2 1.4 1.6 1.8

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -900A/µsec
T

= 25°C

j

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

1

10

1

10

(TYPICAL)

(TYPICAL)

t

rr

I

rr

2

EMITTER CURRENT, IE, (AMPERES)

10

2.0

1.5

, (VOLTS)

CE(sat)

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

10

, (nF)

res

, C

10

oes

, C

ies

10

CAPACITANCE, C

10

3

10

10

10

3

10

20

, (AMPERES)

15

, (VOLTS)

rr

GE

2

10

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

1

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

VGE = 15V

0

0 400 600 1000800200

COLLECTOR-CURRENT, IC, (AMPERES)

3

VGE = 0V
f = 1MHz

2

(TYPICAL)

Tj = 25°C
T

= 125°C

j

CAPACITANCE VS. V

(TYPICAL)

CE

C

ies

1

C

oes

C

0

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

IC = 450A

0

10

GATE CHARGE, V

VCC = 50V

VCC = 100V

res

1

10

GE

5

0

0123

GATE CHARGE, QG, (µC)

45

2

10

367

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM450HA-5F
Trench Gate Design Single IGBTMOD™

450 Amperes/250 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

th(j-c)

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

-2

10

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

-3

10

(IGBT)

= 0.17°C/W

th(j-c)

-1

-2

10

10

TIME, (s)

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

th(j-c)

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

-2

10

-3

10

0

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

1

-3

10

(FWDi)

= 0.23°C/W

th(j-c)

-1

-2

10

10

TIME, (s)

0

10

1

10

368