C&H Technology CM450DX-24S User Manual
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1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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Phone – 1-800-274-4284
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
CM450DX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
AQ
DETAIL "A"
B
AG
AR
AS
AD
AE
AJ
AH
A
D
E
FJ J
G
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
S
T
U
R
S
T
U
Q
W
V
AK
AW
AX
DETAIL "B"
47
48
12345678910111213141516171819202122
X
AT
AU
KK
L
M
AV
G2(38)
E2(39)
K
N
DETAIL "A"
E1C2(24) E1C2(23)
Tr 2
Di2
E2
(47)C1(48)
Di1
DETAIL "B"
Tr 1
Th
NTC
TH1
(1)
P
C1(22)
E1(16)
G1(15)
TH2
(2)
24
23
L
AC (4 PLACES)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4
AP
AN
Y
(4 PLACES)
ZAAAB
AL
AM
C
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.81
L 0.28 7.25
M 0.30 7.75
N 1.95 49.53
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6
Dimensions Inches Millimeters
Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.26 6.5
AM 0.53 13.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.05 1.2
AT 0.17 Dia. 4.3 Dia.
AU 0.102 Dia. 2.6 Dia.
AV 0.088 Dia. 2.25 Dia.
AW 0.12 3.0
AX 0.49 12.5
Dual IGBTMOD™
NX-S Series Module
450 Amperes/1200 Volts
AF
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM450DX-24S is a 1200V (V
450 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 450 24
CE(sat)
Free-Wheel Diode
Heat Sinking
),
CES
V
CES
106/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
1200 Volts
CES
±20 Volts
GES
Collector Current (DC, TC = 119°C)*2 IC 450 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*4
P
*2,*4
I
Emitter Current (Pulse, Repetitive)*3 I
900 Amperes
CRM
3405 Watts
tot
*1
450 Amperes
E
*1
900 Amperes
ERM
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
j(max)
j(max)
) rating.
rating.
0 0
27.7
29.2
43.0
43.4
51.5
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
175 °C
j(max)
125 °C
C(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
Di2
Tr 2 Tr 2
48
Di1 Di1
Tr 1
Th
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
22.5
35.6
48.8
23.3
Di2 Di2
Tr 1 Tr1
73.0
Tr 2
Di1
86.1
24
23
LABEL SIDE
99.2
26.3
42.4
27.8
43.9
2 06/11 Rev. 2
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