C&H Technology CM400HU-24H User Manual

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CM400HU-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

B

J

C

G

D

2 - M4 NUTS

P

HE

G

E

K

L

E

C

CM

T

Measured Point

C

2 - M8 NUTS

M 4 - Mounting
Holes

F

N

Single IGBTMOD™
U-Series Module

400 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

E

E

G

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.66±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 0.53 13.5
F 0.49 12.55
G 0.39 10.0

C

Dimensions Inches Millimeters

H 1.02 26.0

J 0.37 9.5
K 1.14 29.0
L 0.81 20.5
M 0.26 Dia. 6.5 Dia.
N 1.34 +0.04/-0.02 34 +1.0/-0.5
P 1.02 +0.04/-0.02 26 +1.0/-0.5

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24H is a
1200V (V

), 400 Ampere Single

CES

IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

Current Rating V

CM 400 24

CES

7

7

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24H
Single IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400HU-24H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 25°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal, M6 Mounting – 40 in-lb
Mounting Torque, M4 T erminal – 15 in-lb
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
400 Amperes

800* Amperes

400 Amperes
800* Amperes
2100 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 40mA, VCE = 10V 4.5 6 7.5 Volts

IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 V olts

IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC

IE = 400A, VGE = 0V – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Tur n-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recover y Time t
Diode Reverse Recover y Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 21 nf

VCC = 600V, IC = 400A, – – 250 ns

V

= V

GE1

= 15V, – – 350 ns

GE2

RG = 0.78V, Resistive – – 350 ns

Load Switching Operation – – 350 ns
IE = 400A, diE/dt = -800A/µs––300ns
IE = 400A, diE/dt = -800A/µs – 2.2 – µC

––60nf

––12nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

8

8

Q Per IGBT Module – – 0.06 °C/W

th(j-c)

D Per FWDi Module – – 0.09 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.02 – °C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24H
Single IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

800

Tj = 25

VGE = 20V

o

C

15

12

600

, (AMPERES)

C

11

400

10

200

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 400A

9

8

IC = 800A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

t

d(on)

d(off)

t

f

t

r

(TYPICAL)

10

2

IC = 160A

VCC = 600V
V

= ±15V

GE

R

= 0.78 Ω

G

= 125°C

T

j

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

800

600

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

= 25°C

T

j

T

= 125°C

j

SATURATION VOLTAGE CHARACTERISTICS

5

)

4

, (VOLTS

CE(sat)

3

400

2

COLLECTOR-EMITTER

2

10

1

10

1

SATURATION VOLTAGE, V

0

0

COLLECTOR-CURRENT, IC, (AMPERES)

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

VGE = 0V

CAPACITANCE, C

f = 1MHz

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

20

IC = 400A

16

, (AMPERES)

, (VOLTS)

rr

GE

12

240 480 720 960 1200

CAPACITANCE VS. V

(TYPICAL)

0

10

GATE CHARGE, V

VCC = 400V

CE

C

1

10

GE

VCC = 600V

C

ies

oes

C

res

10

2

200

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

I

rr

t

rr

(TYPICAL)

(TYPICAL)

, (VOLTS)

EC

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

1.0 1.5 2.0 2.5 3.53.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -800A/µsec
T

= 25°C

j

, (ns)

rr

2

10

8

REVERSE RECOVERY TIME, t

1

3

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

10

3

10

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

0

0 800400

GATE CHARGE, QG, (nC)

1200 20001600

9

9

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24H
Single IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.06°C/W

-4

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.09°C/W

-4

10

0

1

10

-1

10

-2

10

-3

10

-3

10

10

10