C&H Technology CM400HU-24F User Manual

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CM400HU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

N (2 TYP)

A
D

G

F

G

E

H J K

L (4 TYP)

Q

E

C

L

TC MEASURING
POINT

M (2 TYP.)

C

R

CM

P

E

B

C

Trench Gate Design
Single IGBTMOD™

400 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con­nected super-fast recover y free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

E

RTC

E

G

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 2.44 62.0
C 1.34 +0.04/-0.02 34.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.37 9.5
G 0.39 10.0
H 0.53 13.5

C

Dimensions Inches Millimeters

J 1.02 26.0
K 1.14 29.0
L 0.26 Dia. 6.5 Dia.

MM8 M8
NM4 M4

P 0.49 12.55

Q 1.02 +0.04/-0.02 26.0 +1.0/-0.5
R 0.81 20.5

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24F is a
1200V (V

), 400 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 400 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24F
Trench Gate Design Single IGBTMOD™

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400HU-24F Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Mounting Torque, M4 T erminal – 15 in-lb
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
400 Amperes

800* Amperes

400 Amperes
800* Amperes
1600 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 80 µA

GES

IC = 40mA, VCE = 10V 5 6 7 Volts

IC = 400A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 400A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 400A, VGE = 15V – 4400 – nC

IE = 400A, VGE = 0V – – 3.2 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24F
Trench Gate Design Single IGBTMOD™

400 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 6.8 nf

VCC = 600V, IC = 400A, – – 300 ns

V

= V

GE1

= 15V, – – 100 ns

GE2

RG = 0.78⍀,––600 ns

Inductive Load – – 300 ns

Switching Operation – – 350 ns

IE = 400A – 23.6 – µC

––160 nf

––4nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

QPer IGBT, Tc Reference – 0.078 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi, Tc Reference – – 0.09 °C/W

th(j-c)

Point per Outline Drawing

'Q Per IGBT, – 0.04 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.02 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HU-24F
Trench Gate Design Single IGBTMOD™

400 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

800

Tj = 25

o

C

10

11

15

9.5

VGE = 20V

600

, (AMPERES)

C

400

200

COLLECTOR CURRENT, I

0

012 34

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

(TYPICAL)

9

8.5

8

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

01.02.03.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

, (ns)

rr

2

10

REVERSE RECOVERY TIME, t

1

10

1

10

(TYPICAL)

I

rr

t

rr

2

EMITTER CURRENT, IE, (AMPERES)

10

, (VOLTS)

EC

VCC = 600V
V

= ±15V

GE

R

= 0.78 Ω

G

T

= 25°C

j

Inductive Load

SATURATION VOLTAGE CHARACTERISTICS

3

, (VOLTS)

2

CE(sat)

1

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

0

3

10

, (nF)

res

2

, C

10

oes

, C

ies

1

10

CAPACITANCE, C

0

10

10

3

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

2

10

8

4

GATE-EMITTER VOLTAGE, V

1

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0 200 400

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

VGE = 0V

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

CE

C

ies

C

oes

C

res

1

10

GE

IC = 400A

VCC = 400V

VCC = 600V

0 1000

2000 3000 4000 5000 6000

GATE CHARGE, QG, (nC)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

Tj = 25°C

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

IC = 800A

IC = 400A

IC = 160A

1

SATURATION VOLTAGE, V

0

800600

2

10

068 1210 181614 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Per Unit Base
R

th(j-c)

R

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

2

10

TRANSIENT THERMAL

(IGBT & FWDi)

-2

10

= 0.078°C/W (IGBT)
= 0.09°C/W (FWDi)

-1

10

-5

10

TIME, (s)

VCC = 600V
V

= ±15V

GE

R

= 0.78 Ω

G

T

= 125°C

j

Inductive Load

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4