C&H Technology CM400HG-66H User Manual

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MITSUBISHI HVIGBT MODULES

CM400HG-66H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM400HG-66H

● IC ................................................................... 400A

● V

CES ....................................................... 3300V

● High Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULA TED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

screwing depth
min. 4

EG

5

21.6

±0.3 12.9±0.3

5.8

36.2

73±0.5

57±0.25

29.7

2

1

36

C

16.2±0.3

2 - M8 NUTS

17±0.1

44±0.3

140±0.5

124±0.25

4 - φ 7 MOUNTING HOLES

screwing depth
min. 16.5

+1.0

0

48

±0.15

5

40.4±0.5

(2)

C

(1)

E

G

E

CIRCUIT DIAGRAM

22±0.3

LABEL

C

41±0.5

17.4

±0.3

2.8

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

TAB # 110, T = 0.5

Jul. 2005

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions UnitRatings

V

CES

VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso

Qpd

tpsc

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum power dissipation

(Note 3)

Junction temperature
Operating temperature
Storage temperature
Isolation voltage

Partial discharge

Maximum short circuit pulse
width

VGE = 0V, Tj = 25°C
V

CE = 0V, Tj = 25°C

T

C = 90°C

Pulse (Note 1)

Pulse (Note 1)
T

C = 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1min.
V1 = 6900V

rms, V2 = 5100Vrms

f = 60Hz (acc. to IEC 1287)
V

CC = 2200V, VCES ≤ 3300V, VGE = 15V

T

j = 125°C

–40 ~ +150
–40 ~ +125
–40 ~ +125

10200

INSULATED TYPE

3300

±20
400
800
400
800

4100

10

10

V
V
A
A
A
A

W

°C
°C
°C

V

pC

µs

ELECTRICAL CHARACTERISTICS

Symbol

I

CES

V

GE(th)

IGES

VCE(sat)

Cies
Coes
Cres
Qg

VEC

td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).

Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge

(Note 2)

Emitter-collector voltage

Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge

(Note 2)

Reverse recovery energy

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

V

CE = VCES, VGE = 0V, Tj = 25°C

I

C = 40mA, VCE = 10V, Tj = 25°C

GE = VGES, VCE = 0V, Tj = 25°C

V
I

C = 400A, VGE = 15V, Tj = 25°C (Note 4)

I

C = 400A, VGE = 15V, Tj = 125°C (Note 4)

V

CE = 10V, f = 100kHz

V

GE = 0V, Tj = 25°C
CC = 1650V, IC = 400A, VGE = 15V, Tj = 25°C

V
I

E = 400A, VGE = 0V, Tj = 25°C (Note 4)

I

E = 400A, VGE = 0V, Tj = 125°C (Note 4)

V

CC = 1650V, IC = 400A, VGE = ±15V

R

G(on) = 5Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1650V, IC = 400A, VGE = ±15V

R

G(off) = 5Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1650V, IC = 400A, VGE = ±15V

R

G(on) = 5Ω, Tj = 125°C, Ls = 100nH

Inductive load

j) should not exceed Tjmax rating (150°C).

Min Typ Max

—

5.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

Limits

—

6.0

—

3.30

3.60
60

6.0

5.4

2.8

2.80

2.70

—
—

0.64

—
—

0.52

—

270

0.30

7.0

0.5

4.20
—
—
—
—
—

3.60
—

1.60

1.00
—

2.50

1.00
—

1.40
—
—

Unit

mA

5

V

µA

V

nF
nF
nF
µC

V

µs
µs

J/pulse

µs
µs

J/pulse

µs
µC

J/pulse

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol

Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Thermal resistance

Contact thermal resistance

MECHANICAL CHARACTERISTICS

Symbol

M

CTI
d
ds

a

Mounting torque

Mass

—

Comparative tracking index
Clearance distance in air
Creepage distance along surface

Item Conditions

Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ

Item Conditions

M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw

grease = 1W/m·K

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

Min Typ Max

—
—
—

Min Typ Max

7.0

3.0

1.0

—

600

26.0

56.0

—
—

18.0

Limits

—
—
—

0.52

—
—
—

30.0

60.0

15.0

—

6.0

3.0

—
—
—
—

Unit

K/kW
K/kW
K/kW

Unit

N·m

kg

—

mm
mm

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

800

T

j

= 125°C

700

)

600

A

(

V

V

500

400

300

COLLECTOR CURRENT

200

100

0

COLLECTOR-EMITTER VOLTAGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

6

)

V

V

GE

(

= 15V

(

TYPICAL

)

800

700

GE

GE

= 20V

= 15V

V

GE

= 12V

V

GE

= 10V

)

600

A

(

500

400

300

COLLECTOR CURRENT

V

GE

= 8V

200

100

3421056

0

)

(

TYPICAL

)

6

TRANSFER CHARACTERISTICS

V

CE

= 20V

T

j

= 25°C

T

j

= 125°C

(

TYPICAL

684201012

GATE-EMITTER VOLTAGE (V

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(

TYPICAL

)

)

)

5

4

3

2

1

T

j

= 25°C

T

j

COLLECTOR-EMITTER SATURATION VOLTAGE

0

200 4000 600 800

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

= 125°C

)

)

5

V

(

4

3

2

1

EMITTER-COLLECTOR VOLTAGE

0

200 4000 600 800

EMITTER CURRENT (A

T

j

= 25°C

T

j

= 125°C

)

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

CAPACITANCE CHARACTERISTICS

3

10

V

GE

7

f = 100kHz

5

3

2

)

2

10

nF

(

7
5

3

2

1

10

CAPACITANCE

7
5

3

2

0

10

-1

23 57

10

COLLECTOR-EMITTER VOLTAGE (V

SWITCHING ENERGY CHARACTERISTICS

1.4
V

CC

R

G(on)

T

j

= 125°C, Inductive load

1.2

)

1

J/pulse

(

0.8

0.6

= 0V, T

j

= 25°C

10

= 1650V, V

= R

G(off)

(

TYPICAL

0

)

23 57 23 57

10

1

HALF-BRIDGE

(

TYPICAL

GE

)

= ±15V

= 5Ω

GATE CHARGE CHARACTERISTICS

(

TYPICAL

)

20

V

CC

= 1650V, IC = 400A

T

j

= 25°C

16

)

V

(

C

ies

12

8

C

oes

C

res

2

10

)

GATE-EMITTER VOLTAGE

4

0

GATE CHARGE

32104

(µC)

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

(

TYPICAL

)

3

V

CC

= 1650V, IC = 400A

V

GE

= ±15V

T

j

= 125°C, Inductive load

2.5

E

on

E

off

)

J/pulse

(

on

E

2

1.5

E

0.4

rec

SWITCHING ENERGIES

0.2

0

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

200 4000 600 800

COLLECTOR CURRENT (A

)

1

SWITCHING ENERGIES

0.5

0

10 200 30 40 50

GATE RESISTANCE

(Ω)

E

off

rec

E

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

2

10

V

CC

= 1650V, V

7

G(on)

= R

R

5

T

j

= 125°C, Inductive load

3

2

)

µs

1

10

(

7
5

t

d(off)

3

2

0

10

SWITCHING TIMES

7
5

3

2

-1

10

1

23 57

10

COLLECTOR CURRENT (A

HALF-BRIDGE

(

TYPICAL

GE

= ±15V

G(off)

= 5Ω

2

23 57 23 57

10

)

t

d(on)

t

r

t

f

10

3

10

4

REVERSE RECOVERY CHARACTERISTICS

2

10

V

CC

= 1650V, V

7

R

G(on)

5

3

)

2

µs

(

1

10

7
5

3

2

0

10

7
5

REVERSE RECOVERY TIME

3

2

-1

10

10

= R

j

= 125°C, Inductive load

T

1

23 57

)

G(off)

(

TYPICAL

GE

= 5Ω

)

= ±15V

l

t

2

23 57 23 57

10

10

3

EMITTER CURRENT (A

4

10

7
5

)

A

3

(

2

3

10

10

7
5

3

2

2

10

7
5

REVERSE RECOVERY CURRENT

3

2

1

10

4

rr

rr

)

FREE-WHEEL DIODE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1.2
Single Pulse, T

th(j–c)Q

R
R

th(j–c)R

1.0

C

= 30K/kW
= 60K/kW

= 25°C

0.8

0.6

0.4

0.2

NORMALIZED TRANSIENT THERMAL IMPEDANCE

0

10

-3

23 57

10

-2

23 57

TIME (s

10

-1

23 57

)

10

0

23 57

10

1

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

REVERSE BIAS SAFE OPERATING AREA

1200

V

CC

≤ 2200V, V

j

= 125°C, R

T

1000

)

A

(

800

600

400

COLLECTOR CURRENT

200

0

COLLECTOR-EMITTER VOLTAGE (V

G(off)

1000 20000 3000 4000

(

RBSOA

GE

= +/-15V

≥ 5Ω

FREE-WHEEL DIODE REVERSE

)

1200

)

1000

A

(

REVERSE RECOVERY CURRENT

)

RECOVERY SAFE OPERATING AREA

V

CC

≤ 2200V, di/dt ≤ 2200A/µs

j

= 125°C

T

800

600

400

200

0

1000 20000 3000 4000

EMITTER-COLLECTOR VOLTAGE (V

(

RRSOA

)

)

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005