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CM400HB-90H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
S
P
F
Q
R
U NUTS
T
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.12 130.0
B 5.51 140.0
C 1.50 38.0
D 4.48 114.0
E 4.88±0.01 124.0±0.25
F 1.57 40.0
G 0.79 20.0
H 0.41 10.35
J 0.42 10.65
K 1.92 48.8
L 2.24±0.01 57.0±0.25
M 1.71 43.5
(3 TYP)
D
LL
CM
C
K
C
G
E
N
Y
C
E
EG
J
C
E
Dimensions Inches Millimeters
N 2.42 61.5
P 0.59 15.0
Q 1.57 40.0
R 0.20 5.2
S 1.16 29.5
T 1.10 28.0
U M4 Metric M4
V M8 Metric M8
W 0.28 Dia. Dia.7.0
X 0.20 5.0
Y 0.71 18.0
C
E
H
M
C
E
G
W
(6 TYP)
V NUTS
(4 TYP)
EB
C
X
Single IGBTMOD™
HVIGBT
400 Amperes/4500 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor with a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ Traction
□ Medium Voltage Drive
□ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM400HB-90H is a 4500V (V
400 Ampere Single IGBTMOD™
Power Module.
Type Current Rating V
CM 400 90
CE(sat)
Free-Wheel Diode
Heat Sinking
CES
CES
Amperes Volts (x 50)
),
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HB-90H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Pulse) I
Diode Forward Current** (Tc = 25°C) I
Diode Forward Surge Current** (Pulse) I
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C) P
j
stg
CES
GES
C
CM
E
EM
C
Max. Mounting Torque M8 Terminal Screws – 115 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb
Module Weight (Typical) – 1.5 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
rating.
iso
-40 to 150 °C
-40 to 125 °C
4500 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
4300 Watts
6000 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G VCC
EC
VCE = V
VGE = V
, VGE = 0V ––8.0 mA
CES
, VCE = 0V ––0.5
GES
µ
A
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V, Tj = 25°C – 3.0 3.9* Volts
IC = 400A, VGE = 15V, Tj = 125°C – 3.3 – Volts
= 2250V, IC = 400A, VGE = 15V – 3.6 – µC
IE = 400A, VGE = 0V – 4.0 5.2 Volts
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on) VCC
r VGE1
d(off) RG
f
rr
rr
VGE = 0V, VCE = 10V – 5.3 – nF
= 2250V, IC = 400A, –– 2.4 µs
Resistive Load Switching Operation –– 1.2 µs
IE = 400A, diE/dt = -800A/µs –– 1.8µs
IE = 400A, diE/dt = -800A/µs – 160* –
= V
= 15V, –– 2.4 µs
GE2
= 22.5Ω –– 6.0 µs
– 72 – nF
– 1.6 – nF
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance, Case to Fin R
Q Per IGBT ––0.023 K/W
th(j-c)
D Per FWDi ––0.045 K/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.015 – K/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
SATURATION VOLTAGE CHARACTERISTICS
6
5
, (VOLTS)
4
CE(sat)
COLLECTOR-EMITTER
VGE = 15V
Tj = 25°C
= 125°C
T
j
(TYPICAL)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
0 200 400 800
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
1.2
th(j-c)
1.0
IMPEDANCE CHARACTERISTICS
Single Pulse
T
= 25°C
C
Per Unit Base = R
(FWDi)
th(j-c)
= 0.045 K/W
0.8
0.6
• (NORMALIZED VALUE)
0.4
th
= R
th
Z
0.2
0
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-3
10
REVERSE RECOVERY CHARACTERISTICS
-2
10
TIME, (s)
FREE-WHEEL DIODE
(TYPICAL)
-1
10
0.30
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
Tj = 25°C
= 125°C
T
5
, (VOLTS)
EC
j
4
3
2
1
EMITTER-COLLECTOR VOLTAGE, V
0
1000600
0 200 400 800
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1000600
5
VCC = 2250V
= ±15V
V
GE
= 22.5Ω
R
, (J/P)
4
G
on
= 180nH
L
E
S
= 125°C
T
j
Inductive Load Integrated
3
Over Range of 10%
1.2
th(j-c)
1.0
0.8
0.6
• (NORMALIZED VALUE)
0.4
th
= R
th
Z
0.2
0
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
10
3.0
2.5
, (J/P)
off
E
2.0
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
Single Pulse
= 25°C
T
C
Per Unit Base = R
-3
HALF-BRIDGE TURN-OFF SWITCHING
VCC = 2250V
= ±15V
V
GE
= 22.5Ω
R
G
= 180nH
L
S
= 125°C
T
j
Inductive Load Integrated
Over Range of 10%
(IGBT)
= 0.023 K/W
th(j-c)
-2
10
TIME, (s)
ENERGY CHARACTERISTICS
(TYPICAL)
-1
10
0
10
1.5
2
1.0
1
TURN-ON SWITCHING ENERGY,
0
10
0
0 200 400 600 800
COLLECTOR CURRENT, IC, (AMPERES)
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
1000
0.5
TURN-OFF SWITCHING ENERGY,
0
0 200 400 600 800
COLLECTOR CURRENT, IC, (AMPERES)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
1500
0.25
, (J/P)
rec
E
0.20
0.15
0.10
0.05
REVERSE RECOVERY ENERGY,
0
0 200 400 600 800
4
VCC = 2250V
= ±15V
V
GE
= 22.5Ω
R
G
= 180nH
L
S
= 125°C
T
j
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
EMITTER CURRENT, IE, (AMPERES)
800
, (VOLTS)
C
600
400
VCC = 3000V
= ±15V
V
GE
200
= 22.5Ω
R
COLLECTOR CURRENT, I
G
= 100nH
L
S
= 125°C
T
j
0
0 1000 2000 3000 4000 5000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1250
, (AMPERES)
rr
1000
750
500
250
REVERSE RECOVERY CURRENT, I
0
0 1000 2000 3000 4000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
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