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CM400HA-34H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
R - M4 THD
(2 TYP.)
A B
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.49 114.0
B 3.66±0.01 93.0±0.25
C 1.50+0.04/-0.02 38.0+1.0/-0.5
D 1.26 32.0
E 1.18+0.04/-0.02 30.0+1.0/-0.5
F 1.02 26.0
G 1.0 25.5
H 0.83 21.0
H
H
E
G
N
E
G
L
E
J
EC
DF
Dimensions Inches Millimeters
J 0.71 18.0
K 0.57 14.5
L 0.43 11.0
M 0.41 10.5
N 0.35 9.0
P M8 Metric M8
Q 0.26 Dia. Dia. 6.5
R M4 Metric M4
M
K
Q - DIA.
(4 TYP.)
P - M8 THD
(2 TYP.)
G
M
C
C
Single IGBTMOD™
H-Series Module
400 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recover y
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Auxilliary Inverter for Traction
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-34H
is a 1700V (V
Single IGBTMOD™ Power Module.
Type Current Rating V
CM 400 34
CE(sat)
Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 400 Ampere
CES
Amperes Volts (x 50)
CES
219

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-34H
Single IGBTMOD™ H-Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HA-34H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Max. Mounting Torque M4 G-E Terminal Screw – 13 in-lb
Module Weight (Typical) – 980 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to +150 °C
–40 to +125 °C
1700 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
4100 Watts
4000 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 4 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V – 2.7 3.7** Volts
A
IC = 400A, VGE = 15V, Tj = 150°C – – –* Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 750V, IC = 400A, VGS = 15V – 2900 – nC
IE = 400A, VGS = 0V – – 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 20 nF
VCC = 750V, IC = 400A, – – 1500 ns
V
= V
GE1
= 15V, RG = 10Ω – – 1500 ns
GE2
IE = 600A, diE/dt = –800A/µs – – 400 ns
IE = 600A, diE/dt = –800A/µs – 7.0 –
––85nF
–– 15nF
– – 900 ns
– – 800 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.023 °C/W
Per IGBT – – 0.030 °C/W
Per FWDi – – 0.060 °C/W
220

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-34H
Single IGBTMOD™ H-Series Module
400 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
800
640
Tj = 25°C
VGE = 20V
15
12
11
480
, (AMPERES)
320
C
I
160
0
0246810
SATURATION VOLTAGE CHARACTERISTICS
VCE, (VOLTS)
COLLECTOR-EMITTER
(TYPICAL)
10
8
6
, (VOLTS)
4
CE(sat)
V
2
0
048121620
SWITCHING CHARACTERISTICS
4
10
VCC = 750V
V
= ±15V
GE
R
= 10Ω
G
T
= 125°C
j
TIME, (ns)
3
10
SWITCHING
2
10
1
10
COLLECTOR CURRENT IC, (AMPERES)
IC = 800A
VGE, (VOLTS)
HALF-BRIDGE
(TYPICAL)
2
10
IC = 400A
IC = 160A
t
d(off)
t
f
t
d(on)
t
r
OUTPUT CHARACTERISTICS
(TYPICAL)
800
VCE = 10V
640
10
9
480
, (AMPERES)
320
C
I
160
Tj = 25°C
T
= 125°C
j
5
4
3
, (VOLTS)
2
CE(sat)
V
1
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
VGE = 15V
Tj = 25°C
T
= 125°C
j
(TYPICAL)
8
0
048121620
FORWARD CHARACTERISTICS
3
10
Tj = 25°C
2
10
, (AMPERES)
E
I
1
10
01 4
REVERSE RECOVERY CHARACTERISTICS
3
10
, (ns)
rr
2
10
REVERSE RECOVERY TIME, t
di/dt = -800A/µsec
T
= 25°C
j
1
10
3
10
1
10
EMITTER CURRENT, IE, (AMPERES)
VGE, (VOLTS)
FREE-WHEEL DIODE
(TYPICAL)
VEC, (VOLTS)
(TYPICAL)
t
rr
I
rr
2
10
32
3
10
2
10
1
10
3
10
0
0 160 320 480 800
3
10
, (nF)
res
2
10
, C
oes
, C
ies
1
10
CAPACITANCE, C
VGE = 0V
0
10
-1
10
IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
0
10
VCE, (VOLTS)
GATE CHARGE, V
20
IC = 400A
16
, (AMPERES)
, (VOLTS)
rr
GE
VCC = 500V
12
8
4
GATE-EMITTER VOLTAGE, V
REVERSE RECOVERY CURRENT, I
0
0 0.8 1.6
GATE CHARGE, QG, (µC)
640
CE
C
ies
C
oes
C
res
1
10
GE
VCC = 750V
2.4 4.0
10
3.2
2
221

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-34H
Single IGBTMOD™ H-Series Module
400 Amperes/1700 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
-3
10
1
10
th(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
Single Pulse
= 25°C
T
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
= R
10
th
Z
-3
10
(IGBT)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
10
= 0.03°C/W
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
0
-4
1
10
-1
10
-2
10
-3
10
-3
10
-3
10
1
10
th(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
Single Pulse
T
= 25°C
C
Per Unit Base = R
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
= R
10
th
Z
-3
10
(FWDi)
-2
10
-1
10
th(j-c)
-5
10
TIME, (s)
0
10
= 0.06°C/W
-4
10
1
10
-1
10
-2
10
-3
10
-3
10
222