C&H Technology CM400HA-12H User Manual

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM400HA-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

S

D

F

T

X - M4 THD.
(2 TYP.)

J

T

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.21 107.0
B 3.661±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 1.42 Max. 36.0 Max.
F 1.34 34.0
G 1.18 30.0
H 1.14 29.0

J 0.98 Max. 25.0 Max.
K 0.94 24.0
L 0.93 23.5

Q

M

E

G

A

P

NH

B

U

K

R

E

K

Dimensions Inches Millimeters

M 0.83 21.0
N 0.69 17.5
P 0.63 16.0
Q 0.51 13.0
R 0.43 11.0
S 0.35 9.0

T 0.28 7.0
U 0.12 3.0
V 0.26 Dia. Dia. 6.5
W M6 Metric M6
X M4 Metric M4

G

V - DIA.
(4 TYP.)

L

W - M6 THD.
(2 TYP.)

C

E

C

Single IGBTMOD™
H-Series Module

400 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-12H
is a 600V (V
Single IGBTMOD™ Power Module.

Type Current Rating V

CM 400 12

CE(sat)

(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking

), 400 Ampere

CES

Amperes Volts (x 50)

CES

173

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HA-12H
Single IGBTMOD™ H-Series Module

400 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400HA-12H Units

Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P

j

stg
CES
GES

C

CM

F

FM

d

Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 400 Grams
V Isolation V

* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

RMS

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts
400 Amperes

800* Amperes

400 Amperes

800* Amperes
1500 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V ––1.0 mA

CES

, VCE = 0V ––0.5

GES

µ

IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 400A, VGE = 15V – 2.1 2.8** Volts

A

IC = 400A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

FM

VCC = 400V, IC = 400A, VGS = 15V – 1200 – nC

IE = 400A, VGS = 0V ––2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VGE = 0V, VCE = 10V, f = MHz –– 14 nF

VCC = 300V, IC = 400A, ––600 ns

V

= V

GE1

= 15V, RG = 1.6Ω ––350 ns

GE2

IE = 400A, diE/dt = –800A/µs ––110 ns
IE = 400A, diE/dt = –800A/µs – 1.08 –

–– 40 nF

–– 8 nF
––350 ns

––300 ns

µ

C

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied ––0.040 °C/W

Per IGBT ––0.085 °C/W

Per FWDi ––0.18 °C/W

174

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HA-12H
Single IGBTMOD™ H-Series Module

400 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

800

Tj = 25oC

VGE = 20V

15

12

600

, (AMPERES)

C

11

400

10

200

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 800A

IC = 400A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

(TYPICAL)

IC = 160A

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

VGE = 15V

4

, (VOLTS)

CE(sat)

3

Tj = 25°C

= 125°C

T

j

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 200 400 600 800

COLLECTOR-CURRENT, IC, (AMPERES)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

(TYPICAL)

(TYPICAL)

2

10

TRANSFER CHARACTERISTICS

(TYPICAL)

800

VCE = 10V

= 25°C

T

j

= 125°C

T

600

, (AMPERES)

C

j

400

200

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

CAPACITANCE VS. V

2

10

, (nF)

res

, C

1

10

oes

, C

ies

C

0

10

CAPACITANCE,

VGE = 0V

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

GATE CHARGE, V

CE

C

C

C

1

10

GE

20

ies

res

oes

2

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

, (ns)

t

f

t

r

VCC = 300V

= ±15V

V

GE

= 1.6Ω

R

G

= 125°C

T

j

2

10

10

rr

10

REVERSE RECOVERY TIME, t

10

3

2

di/dt = -800A/µsec

= 25°C

T

j

1

1

10

EMITTER CURRENT, IE, (AMPERES)

I

rr

10

t

rr

10

2

10

3

10

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

0

0 400 800 1200 1600 2000

VCC = 200V

VCC = 300V

GATE CHARGE, QG, (nC)

175

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400HA-12H
Single IGBTMOD™ H-Series Module

400 Amperes/600 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.085°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.18°C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

176