C&H Technology CM400DY-66H User Manual

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MITSUBISHI HVIGBT MODULES

CM400DY-66H

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM400DY-66H

● IC...................................................................400A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 3300V

● Insulated T ype

● 2-elements in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

5 - M4 NUTS

CM

57

E1

114

±0.25

E2(C1)

G1

7.2

36.3

48.8 53.6

24.5

61.5

18

57

±0.25

C2E1

E2C1

G2

C2

4 - M8 NUTS

20

±0.25

40

140

124

6 - φ 7 MOUNTING HOLES

C2

C2

G2

E2

CIRCUIT DIAGRAM

39.55.7

15

E2

C1

G1

E1

15

E1

38

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

28

LABEL

30

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM400DY-66H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings

CES

V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

GE = 0V

V

CE = 0V

V
DC, T

C = 60°C

Pulse (Note 1)

Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

INSULATED TYPE

3300

±20
400
800
400
800

3400

6000

N·m
N·m
N·m

1.5

V
V
A
A
A
A

W

°C
°C

V

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol Item Conditions

I

CES

VGE(th)
IGES

VCE(sat)
Cies

Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

j) should not increase beyond 150°C.

CE = VCES, VGE = 0V

V
IC = 40mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C
CE = 10V

V

GE = 0V

V

CC = 1650V, IC = 400A, VGE = 15V

V

CC = 1650V, IC = 400A

V
V

GE1 = VGE2 = 15V

R

G = 7.5Ω

C = 400A, VGE = 15V (Note 4)

I

Resistive load switching operation
I

E = 400A, VGE = 0V

I

E = 400A

die / dt = –800A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)

Min Typ Max

4.5 7.5

Limits

—

—

6.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

—

4.40

4.80
40

4.0

1.2

1.9
—
—
—
—

3.30
—

100
—
—

0.016

0.036

0.072

0.5

5.72
—
—
—
—
—

1.00

2.00

2.00

1.00

4.29

1.20
—

—

Unit

5

mA

V

µA

V

nF
nF
nF

µC
µs
µs
µs
µs

V

µs
µC

K/W
K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM400DY-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

800

)

A

(

Tj=25°C

600

VGE=13V

(

TYPICAL

VGE=14V

VGE=15V

400

VGE=20V

200

COLLECTOR CURRENT IC

0

2468

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

8

)

VGE=15V

V

(

6

CE(sat)

(

TYPICAL

4

)

VGE=12V

)

VGE=11V

VGE=10V

VGE=9V

VGE=8V
VGE=7V

CE

100

(V)

TRANSFER CHARACTERISTICS

(

TYPICAL

800

VCE=10V

)
A

(

600

400

200

COLLECTOR CURRENT IC

0

GATE-EMITTER VOLTAGE VGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

10

)
V

(

CE(sat)

Tj = 25°C

8

(

TYPICAL

6

4

)

Tj = 25°C
Tj = 125°C

200481216

)

)

IC = 800A

IC = 400A

2

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

200 400 600 800

0

COLLECTOR CURRENT IC (A

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

)

V

8

(

6

4

2

0

EMITTER-COLLECTOR VOLTAGE VEC

0 600 800400200

EMITTER CURRENT IE (A

(

TYPICAL

Tj = 25°C
Tj = 125°C

)

Tj = 25°C
Tj = 125°C

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

020161284

)

)
nF

(

CAPACITANCE Cies, Coes, Cres

)

GATE-EMITTER VOLTAGE VGE (V

CAPACITANCE CHARACTERISTICS

2

10

7
5

3
2

1

10

7
5

3
2

0

10

7
5

VGE = 0V, Tj = 25°C

3

ies, Coes : f = 100kHz

C

2

C

res

–1

10

–1

2310

(

TYPICAL

: f = 1MHz

5710023 5710123 5710

COLLECTOR-EMITTER VOLTAGE VCE (V

IC = 160A

)

)

Cies

Coes

Cres

2

)

Mar. 2003

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM400DY-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

SWITCHING TIME CHARACTERISTICS

5

VCC = 1650V, VGE = ±15V
R

G

= 7.5Ω, Tj = 125°C

3

)

µs

(

Inductive load

2

0

10

7
5

3
2

SWITCHING TIMES

–1

10

(

TYPICAL

t

d(off)

t

d(on)

t

r

t

f

)

7

HALF-BRIDGE

5

5

710

2

23 5710

3

COLLECTOR CURRENT IC (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

2.0
VCC = 1650V, VGE = ±15V,

R

G

)

J/P

(

= 7.5Ω, Tj = 125°C,

Inductive load

1.5

(

TYPICAL

)

23 5

)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

1

10

)

7

µs

(

5

rr

TYPICAL

)

I

rr

3
2

0

10

7

t

rr

5
3

VCC = 1650V, Tj = 125°C

2

Inductive load

REVERSE RECOVERY TIME t

V

GE

= ±15V, RG = 7.5Ω

–1

10

5

710

2

23 5710

3

EMITTER CURRENT IE (A

HALF-BRIDGE

SWITCHING ENERGY CHARACTERISTICS

5.0
VCC = 1650V, IC = 400A,

V

GE

)

J/P

(

= ±15V, Tj = 125°C,

Inductive load

4.0

(

TYPICAL

)

23 5

)

)

3

10

A

(

rr

7
5

3
2

2

10
7

5
3

2

1

10

REVERSE RECOVERY CURRENT I

1.0

0.5

SWITCHING ENERGY

0

0 200 400 800600

CURRENT (A

GATE CHARGE CHARACTERISTICS

20

)

V

(

GE

VCC = 1650V
I

16

C

= 400A

(

TYPICAL

12

8

4

GATE-EMITTER VOLTAGE V

0

GATE CHARGE QG (nC

E

3.0

E

on

on

2.0

E

off

1.0

SWITCHING ENERGY

E

rec

0

0 20406080

)

)

1

10

7
5

3

th(j – c)

2

0

10

7
5

3
2

–1

10

7
5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–2

400030000 1000 2000

10

)

GATE RESISTANCE (Ω

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

Single Pulse
T

C

= 25°C

R

th(j – c)Q
th(j – c)R

= 0.036K/W
= 0.072K/W

R
(Per 1/2 module)

–3

23 57 23 57 23 57

10

10

–2

TIME (s

)

10

E

off

)

–1

10

0

Mar. 2003