C&H Technology CM400DY-34A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM400DY-34A

T - (4 TYP.)

C2E1

E2

G1

C1

E1

E2

G2

C

L

L

C

W ­(4 PLACES)

LABEL

A

F

G

HJKL

M

N

P

Q

P

R

U

V

D

X

Y

Z

C2E1 E2 C1

G1 E1 E2 G2

AA

TC MEASURED POINT

B

C

E

S - (3 PLACES)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.51 140.0

B 5.12 130.0

C 5.12 130.0

D 1.38+0.04/-0.02 35.0+1.0/-0.5

E 4.33+0.04/-0.02 110.0+1.0/-0.5

F 4.33+0.04/-0.02 110.0+1.0/-0.5

G 0.39 10.0

H 0.45 11.5

J 0.54 13.8

K 1.72 43.8

L 1.42 36.0

M 0.39 10.0

N 0.80 20.4

Dimensions Inches Millimeters

P 0.57 14.5

Q 1.57 40.0

R 2.56 65.0

S M8 M8

T 0.26 Dia. 6.5 Dia.

S 0.32 8.0

V 0.97+0.04/-0.02 24.5+1.0/-0.5

W M4 M4

X 0.59 15.0

Y 0.35 9.0

Z 1.02 26.0

AA 0.79 20.0

Dual IGBTMOD™
A-Series Module

400 Amperes/1700 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you
desire from the table below -i.e.
CM400DY-34A is a 1700V (V
400 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 400 34

CE(sat)

Free-Wheel Diode

Heat Sinking

V

CES

CES

),

101/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400DY-34A
Dual IGBTMOD™ A-Series Module

400 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Ratings Symbol CM400DY-34A Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 107°C)*4 I

Peak Collector Current (Pulse Repetition)*2 I

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 P

Emitter Current (TC = 25°C) IE*1 400 Amperes

Peak Emitter Current (Pulse Repetition)*2 I

Mounting Torque, M8 Main Terminal — 96 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Mounting Torque, M4 Mounting — 15 in-lb

Weight — 1200 Grams

Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V

–40 to 125 °C

stg

1700 Volts

CES

±20 Volts

GES

400 Amperes

C

800 Amperes

CM

3780 Watts

C

*1 800 Amperes

EM

3500 Volts

ISO

Static Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

V

CES

V

GES

I

GE(th)

IC = 400A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts

CE(sat)

C

= V

CE

GE

= 40mA, VCE = 10V 5.5 7.0 8.5 Volts

C

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 2.0 µA

GES

= 400A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts

Total Gate Charge QG VCC = 1000V, IC = 400A, VGE = 15V — 2670 — nC

Emitter-Collector Voltage VEC*1 I

= 400A, VGE = 0V*3 — — 3.0 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 350 ns

Diode Reverse Recovery Time trr*1 Switching Operation, — — 450 ns

Diode Reverse Recovery Charge Qrr*1 I

*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

— — 98.8 nF

ies

V

oes

— — 2.1 nF

res

— — 950 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 11.2 nF

CE

= 1000V, IC = 400A, — — 300 ns

CC

= V

= 15V, RG = 1.2Ω, — — 1000 ns

GE2

= 400A — 40 — µC

E

rating.

j(max)

2 01/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

0

10

-1

10

1

01 324

10

1

10

2

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

4

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

800

600

400

200

0

VGE = 10V

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 800A

IC = 400A

IC = 160A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

024681004812 16 20

048121620

0

VGE =

20V

10

11

12

15

13

9

8

Tj = 25

o

C

200

400

600

800

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

5

4

3

0

2

1

0

800400 600

VCE = 15V

Tj = 25°C
T

j

= 125°C

200

10

-1

Tj = 25°C
T

j

= 125°C

CM400DY-34A
Dual IGBTMOD™ A-Series Module

400 Amperes/1700 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

External Gate Resistance RG 1.2 — 12 Ω

*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

Q Per IGBT*4 — — 0.033 °C/W

th(j-c)

D Per FWDi*4 — — 0.055 °C/W

th(j-c)

Thermal Grease Applied*4,*5 — 0.019 — °C/W

th(c-f)

301/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.033°C/W
(IGBT)
R

th(j-c)

=

0.055°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

1000 400030002000

VCC = 1000V

VCC = 800V

IC = 400A

CM400DY-34A
Dual IGBTMOD™ A-Series Module

400 Amperes/1700 Volts

4 01/10 Rev. 1