C&H Technology CM400DY-24A User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

CM400DY-24A

A

W

FF

B

N

J

L

(4 PLACES)

D

M NUTS
(3 PLACES)

G

G

H

KKK

PPP

T THICK
U WIDTH

QQ

V

C

S

R

G2

E2

E1

G1

C1E2C2E1

LABEL

C2E1 E2 C1

G2

E2

E1

G1

E

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBTMOD™
A-Series Module

400 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the heat

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.4/-0.002 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

J 0.81 20.5

K 0.55 14.0

L 0.26 Dia. Dia. 6.5

Rev. 10/07 1

Dimensions Inches Millimeters

M M6 Metric M6

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.83 21.2

S 0.33 8.5

T 0.02 0.5

U 0.110 2.8

V 0.16 4.0

W 0.85 21.5

sinking baseplate, offering simpli­fied system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you de­sire from the table below -i.e.
CM400DY-24A is a 1200V (V
400 Ampere Dual IGBTMOD™
Power Module

Type Current Rating
Amperes Volts (x 50)

CM 400 24

),

CES

V

CES

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM400DY-24A
Dual IGBTMOD™ A-Series Module

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol CM400DY-24A Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (DC, TC = 87°C*) IC 400 Amperes

Peak Collector Current ICM 800** Amperes

Emitter Current*** (TC = 25°C) IE 400 Amperes

Peak Emitter Current*** IEM 800** Amperes

Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 2710 Watts

Mounting Torque, M6 MainTerminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 580 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

I

V

CES

V

GES

I

GE(th)

I

CE(sat)

CE

GE

C

= 400A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts

C

= 400A, VGE = 15V, Tj = 125°C — 2.4 — Volts

C

= V

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

= 40mA, VCE = 10V 6.0 7.0 8.0 Volts

Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 2000 — nC

Emitter-Collector Voltage** VEC I

= 400A, VGE = 0V — — 3.8 Volts

E

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr V

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load — — 350 ns

Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns

Diode Reverse Recovery Charge** Qrr I

*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 70 nf

ies

V

oes

— — 1.4 nf

res

— — 550 ns

d(on)

V

d(off)

GE1

= 10V, VGE = 0V — — 6.0 nf

CE

= 600V, IC = 400A, — — 180 ns

CC

= V

= 15V, RG = 0.78Ω, — — 600 ns

GE2

= 400A — 16 — µC

E

rating.

j(max)

Rev. 10/072

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

01 3425

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6810 1412 16 18 20

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0 200 600

2

1

0

800

VGE = 15V

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 800A

IC = 400A

IC = 160A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0246 810

200

0

VGE =

20V

10

11

12

15

13

9

Tj = 25°C

400

600

800

400

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
V

GE

= 15V

R

G

= 0.78Ω

T

j

= 125°C

Inductive Load

t

f

10

3

Tj = 25°C
T

j

= 125°C

CM400DY-24A
Dual IGBTMOD™ A-Series Module

400 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case* R

Thermal Resistance, Junction to Case* R

Contact Thermal Resistance R

External Gate Resistance RG 0.78 — 10 Ω

*TC, Tf measured point is just under the chips.

Q Per IGBT 1/2 Module — — 0.046 °C/W

th(j-c)

D Per FWDi 1/2 Module — — 0.085 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W

th(c-f)

Rev. 10/07 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

20

15

0

750

2250

10

5

0

3000 1500

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.0.046°C/W
(IGBT)
R

th(j-c)

=

0.0.085°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

VCC = 600V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

VCC = 600V
V

GE

= 15V

R

G

= 0.78Ω

T

j

= 25°C

Inductive Load

VCC = 400V

IC = 400A

10

3

COLLECTOR CURRENT, I

C

, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 600V
V

GE

= 15V

R

G

= 0.78Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

I

C

= 400A

T

j

= 125°C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

-1

10

0

10

2

10

3

10

1

10

1

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

E

SW(on)

E

SW(off)

I

rr

t

rr

E

SW(on)

E

SW(off)

GATE RESISTANCE, RG, ()

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

-1

10

0

10

1

10

0

10

1

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

VCC = 600V
V

GE

= 15V

I

C

= 400A

T

j

= 125°C
Inductive Load
C Snubber at Bus

VCC = 600V
V

GE

= 15V

R

G

= 0.78Ω

T

j

= 125°C
Inductive Load
C Snubber at Bus

E

rr

E

rr

CM400DY-24A
Dual IGBTMOD™ A-Series Module

400 Amperes/1200 Volts

Rev. 10/074