C&H Technology CM400DU-24H User Manual

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Suite 108
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CM400DU-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

"R" (4 PLACES)

BEE

"S" (3 PLACES)

C2E1

E2

C2E1

E2

ML

Q

F

G

C1

H

J

K

J

"T" (4 PLACES)

D

G2
E2

E1
G1

C

G2E2E1G1

C1

N

P

Dual IGBTMOD™
U-Series Module

400 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and

thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.12 130.0
B 5.12 130.0
C 1.38 35.0
D 0.96 24.5
E 4.33 110.0
F 0.39 10.0
G 0.39 10.0
H 0.81 20.5

J 0.53 14.5

Dimensions Inches Millimeters

K 1.65 42.0

L 1.42 36.0
M 1.72 43.8
N 0.54 13.8

P 0.45 11.5
Q 5.51 140.0
R 0.26 Dia .6.5 Dia.

SM8 M8

TM4 M4

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400DU-24H is a
1200V (V

), 400 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 400 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24H
Dual IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400DU-24H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M8 Main Terminal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 310 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
400 Amperes

800* Amperes

400 Amperes
800* Amperes
2100 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V ––2mA

CES

, VCE = 0V ––0.5 µA

CES

IC = 40mA, VCE = 10V 4.5 6 7.5 Volts

IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G

EC

VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC

IE = 400A, VGE = 0V ––3.2 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V ––21 nf

VCC = 600V, IC = 400A, –––ns

V

= V

GE1

GE2

RG = 0.78⍀, Resistive –––ns

Load Switching Operation –––ns
IE = 400A, diE/dt = -800A/µs ––300 ns
IE = 400A, diE/dt = -800A/µs – 2.2 – µC

= 15V, –––ns

––60 nf

––12 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

2

2

Q Per IGBT 1/2 Module ––0.06 °C/W

th(j-c)

R Per FWDi 1/2 Module ––0.09 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.019 – °C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24H
Dual IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

800

Tj = 25

o

C

15

12

VGE = 20V

600

, (AMPERES)

C

400

200

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 400A

11

10

9

8

IC = 800A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

t

d(off)

t

d(on)

t

f

t

r

(TYPICAL)

IC = 160A

VCC = 600V
V

= ±15V

GE

R

= 0.78 Ω

G

T

= 125°C

j

2

10

COLLECTOR-EMITTER

VGE = 15V

Tj = 25°C

= 125°C

T

j

(TYPICAL)

800

600

, (AMPERES)

C

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

= 25°C

T

j

= 125°C

T

j

SATURATION VOLTAGE CHARACTERISTICS

5

)

4

, (VOLTS

CE(sat)

3

400

2

COLLECTOR-EMITTER

2

10

1

10

1

SATURATION VOLTAGE, V

0

0 200 400 600 800

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

, (nF)

res

, C

1

10

oes

, C

ies

0

10

CAPACITANCE, C

VGE = 0V
f = 1MHz

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

(TYPICAL)

0

10

GATE CHARGE, V

20

IC = 400A

16

, (AMPERES)

, (VOLTS)

rr

GE

VCC = 400V

12

CE

1

10

GE

VCC = 600V

C

ies

C

oes

C

res

2

10

200

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

1.0 1.5 2.0 2.5 3.53.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -800A/µsec
T

= 25°C

j

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

, (VOLTS)

EC

I

rr

t

rr

8

REVERSE RECOVERY TIME, t

1

3

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

10

3

10

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

0

0 400 1200800

GATE CHARGE, QG, (nC)

20001600

3

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24H
Dual IGBTMOD™ U-Series Module

400 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.06°C/W

-4

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.09 °C/W

-4

10

1

10

-1

10

-2

10

-3

10

-3

10

4

4