C&H Technology CM400DU-24F User Manual

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CM400DU-24F

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

B
F

C

C2E1

L

Z

E2

RTC

M

R

C

E

AA

S - (3 PLACES)

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A5.51 140.0
B5.12 130.0
C5.12 130.0
D 1.38 +0/-0.02 35.0 +0/-0.5
E 4.33±0.01 110.0±0.25
F 4.33±0.01 110.0±0.25
G0.39 10.0
H0.45 11.5

J0.54 13.8
K1.72 43.8
L1.42 36.0
M0.39 10.0
N0.80 20.4

G

C1

E1 G1 E2 G2

E2

RTC

Dimensions Inches Millimeters

P 0.57 14.5
Q 1.57 40.0
R 2.56 65.0
SM8 M8

T 0.32 8.0
U 0.32 8.0
V 0.97 +0.04/-0.02 24.5 +1.0/-0.5
WM4 M4
X 0.59 15.0
Y 0.35 9.0

Z 1.02 26.0

AA 0.79 20.0

TC MEASURED POINT

T - (4 TYP.)

N

P

C

Q

L

X

Y

P

W ­(4 PLACES)

HJKL

V

U

G2
E2

C1

E1
G1

LABEL

D

Dual IGBTMOD™
F-Series Module

400 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal

management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400DU-24F is a
1200V (V
IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

CM 400 24

CE(sat)

Free-Wheel Diode
Heat Sinking

), 400 Ampere Dual

CES

Current Rating V

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24F
Dual IGBTMOD™ F-Series Module

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400DU-24F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M8 Main Ter minal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
400 Amperes

800* Amperes

400 Amperes
800* Amperes
1100 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 2 mA

CES

, VCE = 0V – – 80 µA

CES

IC = 40mA, VCE = 10V 5.0 6 7.0 Volts

IC = 400A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 400A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 400A, VGE = 15V – 4400 – nC

IE = 400A, VGE = 0V – – 3.2 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24F
Dual IGBTMOD™ F-Series Module

400 Amperes/1200 Volts

Dynamic Electrical Characteristics, T

= 25 °C unless otherwise specified

j

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time* t
Diode Reverse Recovery Charge* Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 6.8 nf

VCC = 600V, IC = 400A, – – 450 ns

V

= V

GE1

= 15V, – – 200 ns

GE2

RG = 3.1⍀,––1000 ns

Inductive Load – – 300 ns

Switching Operation – – 550 ns

IE = 400A – 23.6 – µC

––160 nf

––4nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance R

Contact Thermal Resistance R

*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R

should be measured just under the chips.

th(f-a)

QPer IGBT 1/2 Module, Tc Reference – – 0.11 °C/W

th(j-c)

Point per Outline Drawing

RPer FWDi 1/2 Module, Tc Reference – – 0.13 °C/W

th(j-c)

Point per Outline Drawing

QPer IGBT 1/2 Module – – 0.045** °C/W

th(j-c')

Tc Reference Point Under Chips

th(c-f)

Per Module, Thermal Grease Applied – 0.010 – °C/W

3

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-24F
Dual IGBTMOD™ F-Series Module

400 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

800

600

, (AMPERES)

C

400

200

COLLECTOR CURRENT, I

0

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

, (ns)

rr

10

REVERSE RECOVERY TIME, t

10

Tj = 25

o

C

VGE = 20V

15

11
10

9.5

9

8.5

8

01234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

(TYPICAL)

Tj = 25°C

2

1

0.50 1.0 1.5 2.0 2.5 3.53.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

VCC = 600V
V

GE

R

= 3.1 Ω

G

T

= 25°C

j

Inductive Load

2

1

1

10

(TYPICAL)

= ±15V

2

EMITTER CURRENT, IE, (AMPERES)

10

, (VOLTS)

EC

t

rr

I

rr

SATURATION VOLTAGE CHARACTERISTICS

3.0

)

2.5

, (VOLTS

2.0

CE(sat)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

3

10

, (nF)

res

, C

2

10

oes

, C

ies

1

10

CAPACITANCE, C

0

10

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

0 200 400 600 800

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

VGE = 0V

C

ies

C

oes

C

res

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

10

IC = 400A

VCC = 400V

VCC = 600V

0 1000 30002000

GATE CHARGE, QG, (nC)

600050004000

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

10

10

10

SWITCHING TIME, (ns)

10

2

10

th(j-c)

10

10

10

• (NORMALIZED VALUE)

th

10

= R

th

Z

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

IC = 400A

1

0

068 12 1614 1810 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

4

3

2

1

0

1

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

-3

10

1

Per Unit Base
R

th(j-c)

R

th(j-c)

0

Single Pulse

= 25°C

T

C

-1

-2

-3

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

TRANSIENT THERMAL

(IGBT & FWDi)

-2

10

= 0.11°C/W (IGBT)
= 0.13 °C/W (FWDi)

TIME, (s)

10

10

10

IC = 800A

VCC = 600V
V
R
T
Inductive Load

2

-1

-5

IC = 160A

= ±15V

GE

= 3.1 Ω

G

= 125°C

j

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4

4